DMTH43M8LPS Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS RDS(ON) Max 40V 3.3mΩ @ VGS = 10V 5.0mΩ @ VGS = 5V ID TC = +25°C (Note 9) 100A 95A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. Mechanical Data Applications Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH43M8LPSQ) BLDC Motors DC-DC Converters Loadswitch ® Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View Internal Schematic Bottom View S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH43M8LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D D D PowerDI5060-8 D D D D D TH4008LS TH43M8LS YY WW YY WW S S S G S S S = Manufacturer’s Marking TH43M8LS or TH4008LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) G PowerDI is a registered trademark of Diodes Incorporated. DMTH43M8LPS Document number: DS38751 Rev. 5 - 2 1 of 7 www.diodes.com February 2018 © Diodes Incorporated DMTH43M8LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V (Note 5) TA = +25°C TA = +100°C TC = +25°C TC = +100°C Value 40 ±20 22 15.5 ID Unit V V A Maximum Continuous Body Diode Forward Current (Note 6) IDM IS 100 82 350 69 Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 350 A Avalanche Current, L = 1mH Avalanche Energy, L = 1mH IAS EAS 13.2 87 A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.7 55 83 1.8 -55 to +175 Unit W °C/W W °C/W °C Continuous Drain Current, VGS = 10V (Note 6) (Note 9) ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — 2.7 3.6 — 2.5 3.3 5.0 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 5V, ID = 15A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2,693 1,172 52 2.54 38.5 17.6 6.9 6.9 5.2 5.7 23.5 11 35.4 32.9 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω ns nC IF = 20A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limit. DMTH43M8LPS Document number: DS38751 Rev. 5 - 2 2 of 7 www.diodes.com February 2018 © Diodes Incorporated DMTH43M8LPS 30 50 V GS = 10V 45 40 25 V GS = 4V V GS = 3.5V 35 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) )A ( T N E R R U C N I A R D ,D I VDS = 5.0V V GS = 5V V GS = 3.0V 30 25 20 15 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () V GS = 5V V GS = 10V R 5 10 15 20 25 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 125°C T A = -55°C 6 )D E E Z C IL R A U M O R S O -N N ( I E A R C D N A , )N T OS I (S S D R E R N O 5 T A = 150°C TA = 175°C T A = 125°C 4 T A = 85°C 3.5 3 T A = 25°C 2.5 T A = -55°C 2 1.5 1 0.5 00 5 10 15 20 25 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH43M8LPS Document number: DS38751 Rev. 5 - 2 5 25 20 15 I D = 20A ID = 15A 10 5 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.2 VGS = 10V 4.5 1 2 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 30 02 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) TA = 25°C TA = 85°C 0 0 3 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic S D 5.5 10 T A = 150°C V GS = 2.5V 5 ) ( E C 4.5 N A T S 4 IS E R -N 3.5 O E C 3 R U O S 2.5 -N I A R 2 D , )N O 1.5 ( 1 0 TA = 175°C 15 5 5 0 0 20 30 3 of 7 www.diodes.com 2 1.8 1.6 1.4 1.2 VGS = 10V I D = 20A VGS = 5V I D = 15A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2018 © Diodes Incorporated 2.5 8 VGS(th ), GATE THRESHO LD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMTH43M8LPS 7 6 VGS = 5V, ID = 15A 5 4 3 2 VGS = 10V, ID = 20A 1 2 I D = 1mA 1.5 ID = 250µA 1 0.5 0 -50 -25 0 25 50 75 0 -50 100 125 150 175 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Variation vs. Ambient Temperature Figure 8 Threshold Gate Threshold Variation vs. Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 10000 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V I S, SOURCE CURRENT (A) 25 20 T A = 175°C 15 T A = 150°C T A = 25°C T A = 125°C 10 T A = -55°C TA = 85°C Ciss Coss 1000 100 Crss 5 10 00 0 5 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) LIMITED 9 ID, DRAIN CURRENT (A) 8 7 VGS (V) 6 5 4 VDS = 20V, ID = 20A 3 100 PW=1µs PW=100µs PW=1ms 1 2 1 0.1 0 0 5 10 15 20 25 30 35 40 Document number: DS38751 Rev. 5 - 2 TJ(MAX)=175℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.1 PW=10ms PW=100ms PW=1s 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMTH43M8LPS PW=10µs 10 4 of 7 www.diodes.com February 2018 © Diodes Incorporated DMTH43M8LPS r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 0.001 0.000001 D = 0.01 D = 0.005 D = Single Pulse R JC(t) = r(t) * RJC R JC = 1.8°C/W Duty Cycle, D = t1/ t2 0.00001 DMTH43M8LPS Document number: DS38751 Rev. 5 - 2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 February 2018 © Diodes Incorporated DMTH43M8LPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A L1 G b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 — b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 — — L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH43M8LPS Document number: DS38751 Rev. 5 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 February 2018 © Diodes Incorporated DMTH43M8LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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