FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion 100% Rg tested RoHS Compliant Bottom Top S D D D Pin 1 S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 12.4 A 200 Single Pulse Avalanche Energy PD Units V 60 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 173 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86101 Device FDMS86101 ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET October 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 800 nA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.0 V 100 V 66 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 VGS = 10 V, ID = 13 A 6.3 8 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 9.5 A 8.4 13.5 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.9 14 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 13 A 2.9 mV/°C 45 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 2255 3000 pF 460 610 pF 30 45 pF 1.0 3.0 Ω 15 27 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω 11 20 ns 27 44 ns 7 13 ns Total Gate Charge VGS = 0 V to 10 V 39 55 nC VGS = 0 V to 5 V 22 31 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 13 A nC 9.5 nC 10.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 13 A (Note 2) 0.8 1.3 IF = 13 A, di/dt = 100 A/μs V 56 90 ns 61 98 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 173 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 34 A, VDD = 75 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A. ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 2 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 VGS = 6 V VGS = 5.5 V 100 VGS = 5 V 50 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 40 ID = 13 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 13 A 30 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 200 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 5 V 100 TJ = 150 oC 50 TJ = 25 oC VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC TJ = -55 oC 0 1 2 3 4 5 6 7 0.01 0.0 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 3 1.2 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 90 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC RθJC = 1.2 C/W 75 60 VGS = 10 V 45 Limited by Package 30 VGS = 6 V 15 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 0.1 1s SINGLE PULSE TJ = MAX RATED 10 s DC RθJA = 125 oC/W TA = 25 oC 0.1 1 10 100 500 150 2000 1000 VGS = 10 V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 0.001 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.01 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.001 0.0005 -3 10 o RθJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 5 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5.10 4.90 A PKG CL 8 5.10 3.91 B 5 8 7 6 1.27 5 0.77 4.52 PIN #1 IDENT MAY APPEAR AS OPTIONAL 1 KEEP OUT AREA 3.75 6.25 5.90 PKG CL 6.61 1.27 TOP VIEW 4 1 2 3 4 0.61 1.27 SEE DETAIL A 3.81 LAND PATTERN RECOMMENDATION SIDE VIEW 5.10 4.90 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE 1.27 1 2 3 6 0.46 (8X) 0.36 0.10 C A B (0.39) 4 (0.52) 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 6.25 5.90 (0.50) (1.81) (3.40) 4.29 4.09 (1.19) 8 7 6 0.15 MAX (2X) 5 3.86 3.61 OPTION - B (PUNCHED TYPE) 0.71 0.44 BOTTOM VIEW 0.10 C 0.08 C 0.30 0.20 1.10 0.90 0.05 0.00 DETAIL A 5.85 5.65 C SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08AREV6. SCALE: 2:1 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 6 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ® FPS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS86101 Rev.C8 7 www.fairchildsemi.com FDMS86101 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® AccuPower™ FRFET® PowerXS™ AX-CAP™* Global Power ResourceSM Programmable Active Droop™ ® ® BitSiC Green Bridge™ QFET TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ and Better™ Dual Cool™ SmartMax™ TranSiC® MegaBuck™ EcoSPARK® SMART START™ TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT®* ESBC™ MicroFET™ SPM® μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® *