MG400Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA FO 6 7 4 8 BB E1/C2 3 1 4 BB 2 OT 1 2 FO BB 3 DETAIL "A" E2 SIGNAL TERMINAL 1 G(L) 2 FO(L) 3 E(L) 4 VD 5 G(H) 6 FO(H) 7 E(H) 8 OPEN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N 5/05 Inches 4.80±0.04 1.97±0.01 1.61±0.03 4.33±0.01 2.44±0.04 2.32±0.02 4.69±0.02 0.60 0.63 0.51 0.24 0.22 Dia. 1.42±0.03 Millimeters 122.0±1.0 50.0±0.3 41.0±0.8 110.0±0.3 62.0±1.0 59.0±0.5 119.0±0.5 15.24 16.0 13.0 6.0 5.5 Dia. 36.0±0.8 Dimensions Inches Millimeters P M6 M6 Q 0.79±0.03 20.0±0.8 R 1.02±0.03 26.0±0.8 S 1.44±0.03 36.7±0.8 T 0.24 Rad. 6.0 Rad. U 0.02 0.64 V 0.60 15.3 W 0.41±0.03 10.5±0.8 X 1.02 -0.01/+0.04 26.0 -0.3/+1.0 Y 1.48 -0.02/+0.04 37.5 -0.5/+1.0 Z 0.01 Dia. 3.0 Dia. AA 1.00±0.023 25.4±0.6 BB 0.10 2.54 Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Over-Current and Over-Temperature Protection £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG400Q2YS60A is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Compact IGBT Series Module. Type Current Rating Amperes VCES Volts (x 20) MG 400 60 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol MG400Q2YS60A Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Range Tope -20 ~ 100 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Power Device Junction Temperature Module Weight (Typical) — 375 Grams VISO 2500 Volts Collector-Emitter Voltage VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts IC 400 Amperes ICP 800 Amperes IE 400 Amperes Isolation Voltage, AC 1 minute, 60Hz Sinusoidal IGBT Inverter Sector Collector Current (TC = 25°C) Peak Collector Current (TC = 25°C) Emitter Current (TC = 25°C) Peak Emitter Current (TC = 25°C) IEM 800 Amperes Collector Dissipation (TC = 25°C) PC 3750 Watts IGBT Control Sector Control Voltage (OT) VD 20 Volts Fault Input Voltage VFO 20 Volts Fault Input Current IFO 20 mA Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGES VGE = ±20V, VCE = 0V — — -4 / +3 mA VGE = 10V, VCE = 0V — — 100 nA IGBT Inverter Sector Gate Leakage Current Collector-Emitter Cutoff Current ICES VCE = 1200V, VGE = 0V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 400mA 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 400A, Tj = 25°C — 2.4 2.8 Volts VGE = 15V, IC = 400A, Tj = 125°C — — 3.2 Volts Input Capacitance Cies Inductive Load td(on) Switching Times 2 VCE = 10V, VGE = 0V, f = 1MHz — 31,000 — pF 0.1 — 1.0 µs toff VCC = 600V, IC = 400A, — — 2.0 µs tf VGE = ±15V, RG = 5.1Ω — — 0.5 µs — — 0.5 µs IE = 400A — 2.4 2.8 Volts Reverse Recovery Time trr Emitter-Collector Voltage VEC 5/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Fault Output Current OC VGE = 15V 480 — — A Over-Temperature OT — 100 — 125 °C td(Fo) VCC = 600V, VGE = ±15V — — 8 µs Control Sector Fault Output Delay Time Thermal Characteristics Characteristic Junction to Case Thermal Resistance Contact Thermal Resistance Symbol Condition Min. Typ. Max. Units Rth(j-c)Q IGBT (Per 1/2 Module) — — 0.033 °C/Watt Rth(j-c)D FWDi (Per 1/2 Module) — — 0.068 °C/Watt — 0.013 — °C/Watt Value Units Rth(c-f) — Recommended Conditions for Use Characteristic Symbol Condition Supply Voltage VCC Applied across C1-E2 Terminals ≤750 Volts Gate Voltage VGE — 14.8 ~ 17 Volts Gate Resistance RG — ≥10.0 Ω Switching Frequency fC — 0 ~ 20 kHz OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 800 800 COLLECTOR CURRENT, IC, (AMPERES) 12V 600 VGE = 20V 400 10V 200 800 Tj = 125°C 15V 9V FORWARD CURRENT, IF, (AMPERES) Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL CHARACTERISTICS (TYPICAL) 15V 600 12V VGE = 20V 10V 400 9V 200 8V VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C 600 400 200 8V 0 0 1 2 3 4 0 5 2 3 4 0 5 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) FORWARD VOLTAGE, VF, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 10 IC = 800A 8 IC = 400A 6 IC = 200A 4 2 0 0 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 12 Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 12 5/05 0 10 IC = 800A 8 IC = 400A 6 IC = 200A 4 2 0 0 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 Tj = -40°C 10 IC = 800A 8 IC = 400A 6 IC = 200A 4 2 0 0 5 10 15 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts 400 200 0 2 4 6 8 10 12 100 200 300 102 400 200 300 TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 100 200 300 103 103 102 Tj = 25°C Tj = 125°C 102 400 VCC = 600V VGE = ±15V RG = 5.1Ω VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C SWITCHING TIME, tf, (µs) 103 0 100 200 300 101 400 0 100 200 300 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) RISE TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-OFF TIME VS. GATE RESISTANCE (TYPICAL) TURN-ON TIME VS. GATE RESISTANCE (TYPICAL) 104 102 100 200 300 COLLECTOR CURRENT, IC, (AMPERES) 400 103 102 0 5 400 104 VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C SWITCHING TIME, ton, (µs) SWITCHING TIME, toff, (µs) VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 400 104 104 0 100 TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 0 0 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(on), (µs) SWITCHING TIME, td(off), (µs) SWITCHING TIME, tr, (µs) 0 103 COLLECTOR CURRENT, IC, (AMPERES) 103 4 VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 101 103 102 14 SWITCHING TIME, ton, (µs) 600 102 104 104 VCE = 5V Tj = 25°C Tj = 125°C Tj = -40°C SWITCHING TIME, toff, (µs) COLLECTOR CURRENT, IC, (AMPERES) 800 0 TURN-ON TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-OFF TIME VS. COLLECTOR CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 10 15 GATE RESISTANCE, RG, (Ω) 20 VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C 103 102 0 5 10 15 20 GATE RESISTANCE, RG, (Ω) 5/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts TURN-OFF DELAY TIME VS. GATE RESISTANCE (TYPICAL) TURN-ON DELAY TIME VS. GATE RESISTANCE (TYPICAL) 104 103 0 5 10 15 102 20 101 20 5 10 15 10 15 SWITCHING LOSS, Eon, (mJ/PULSE) VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 0 100 200 300 101 VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 100 400 0 100 200 300 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CURRENT (TYPICAL) 102 SWITCHING LOSS, Eon, (mJ/PULSE) 101 5 10 15 GATE RESISTANCE, RG, (Ω) 20 VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 101 100 20 102 101 100 20 VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 0 5 SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) 102 0 0 SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING TIME, tr, (µs) 15 RISE TIME VS. GATE RESISTANCE (TYPICAL) 102 SWITCHING LOSS, Eoff, (mJ/PULSE) 10 GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C 5/05 5 102 GATE RESISTANCE, RG, (Ω) 102 100 0 VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C GATE RESISTANCE, RG, (Ω) 103 101 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 103 VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C SWITCHING TIME, tf, (µs) VCC = 600V VGE = ±15V IC = 400A Tj = 25°C Tj = 125°C SWITCHING TIME, td(on), (µs) SWITCHING TIME, td(off), (µs) 104 FALL TIME VS. GATE RESISTANCE (TYPICAL) 0 5 10 15 GATE RESISTANCE, RG, (Ω) 20 400 103 102 VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 101 0 100 200 300 400 EMITTER CURRENT, IE, (AMPERES) 5 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module 400 Amperes/1200 Volts REVERSE RECOVERY LOSS VS. FORWARD CURRENT (TYPICAL ) REVERSE RECOVERY TIME (TYPICAL) VCC = 600V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 101 0 100 200 300 400 VCC = 600V VGE = ±15V RG = 5.1Ω 101 Tj = 25°C Tj = 125°C 100 0 100 EMITTER CURRENT, IE, (AMPERES) REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 1000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IiC, (AMPERES) 1000 800 600 400 VGE = ±15V RG = 5.1Ω Tj ≤ 125°C 200 0 0 400 800 1200 1600 300 800 Coes Cres 103 VGE = 0V f = 1MHz TC = 25°C 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 20 600 400 200 0 104 102 10-2 400 IC = 400A RL = 1.5Ω Tj = 25C 0 1000 2000 3000 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) IC = 400A RL = 1.5Ω Tj = 25C 16 12 600V 8 400V 200V VCE = 0V 4 0 0 1000 2000 3000 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 100 100 TC = 25°C TRANSIENT IMPEDANCE, Rth(j-c) TC = 25°C TRANSIENT IMPEDANCE, Rth(j-c) 200 Cies EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.033°C/W 10-4 10-3 10-2 10-1 TIME, (s) 6 CAPACITANCE, Cies, Coes, Cres, (pF) 102 105 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 100 101 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.068°C/W 10-4 10-3 10-2 10-1 100 101 TIME, (s) 5/05