WILLAS FM120-M+ BCX53 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) • Low profile surface mounted application in order to SOD-123H optimize board space. FEATURES • Low power loss, high efficiency. current capability, low forward voltage drop. • High package is available z Pb-Free • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free product switching. for packing code suffix “H” high-speed • Ultra • Silicon epitaxial planar chip, metal silicon junction. z Low Voltage • Lead-free parts meet environmental standards of z High Current MIL-STD-19500 /228 RoHS product for packing code suffix "G" • APPLICATIONS 0.146(3.7) 0.130(3.3) SOT-89 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. BASE 2. COLLECTOR Halogen free product for packing code suffix "H" z Medium Power General Purposes Mechanical data z Driver •Stages of Audiorated Amplifiers Epoxy : UL94-V0 flame retardant MARKING:•BCX53:AH, BCX53-10:AK, Case : Molded plastic, SOD-123HBCX53-16:AL 3. EMITTER 0.040(1.0) 0.024(0.6) • Terminals :Plated terminals, solderable per MIL-STD-750 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 0.031(0.8) Typ. , 0.031(0.8) Typ. Method 2026 by cathode band Symbol • Polarity : Indicated Parameter VCBO VCEO Value Unit -100 -80 V V -5 V -1 A 500 mW 250 ℃/W PositionVoltage : Any • Mounting Collector-Base • Weight : Approximated 0.011 gram Collector-Emitter Voltage VEBO Emitter-Base Voltage Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Current IRatings C at Collector 25℃ ambient temperature unless otherwise specified. Collector Power Dissipation PSingle phase half wave, 60Hz, resistive of inductive load. C load, derate currentFrom by 20% Thermal Resistance Junction To Ambient RFor capacitive θJA Tj Junction Marking Code RATINGS Temperature SYMBOL FM120-MH FM130-MH 150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Tstg Storage Temperature 13 14 -55~+150 30 40 21 ℃ 15 ℃50 28 35 otherwise specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ Vunless Maximum DC Blocking Voltage 20 30 40 50 DC Maximum Average Forward Rectified Current Parameter IO Symbol T est conditions Min Peak Forward Surge Current 8.3 ms single half sine-wave Collector-base breakdown voltage superimposed on rated load (JEDEC method) Collector-emitter breakdown voltage V(BR)CBOIFSM IC=-100µA,IE=0 IC=-10mA,IB=0 V(BR)CEO* -100 Emitter-base breakdown voltage Typical Junction Capacitance (Note 1) V(BR)EBO CJ IE=-100µA,IC=0 -5 Typical Thermal Resistance (Note 2) RΘJA Operating Temperature Collector cut-off currentRange ICBO Emitter cut-off current IEBO Storage Temperature Range CHARACTERISTICS -80 to +125 TJ VCB=-30V,I-55 E=0 TSTG @T A=125℃ VCE(sat)* IC=-0.5A,IB=-50mA Base -emitter voltage VBE* VCE=-2V, IC=-0.5A Transition frequency fT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 42 60 115 150 120 200 56 70 105 140 80 100 150 200 1.0 Typ Max 30 Unit V V 40 120 0.70 63 hFE(3)* IR VCE=-2V, IC=-0.5A Collector-emitter saturation voltage 10 100 V -55 to +150 -0.1 µA -0.1 µA hFE(1)*SYMBOLVCE =-2V, ICFM130-MH =-5mA FM140-MH FM150-MH 63FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M FM120-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 18 80 - 65 to +175 VEB=-5V,IC=0 0.50 hFE(2)* VF VCE=-2V, IC=-150mA Maximumgain Forward Voltage at 1.0A DC DC current 16 60 40 VCE=-5V,IC=-10mA, f=100MHz 0.9 0.85 250 0.92 0.5 10 50 -0.5 V -1 V MHz * Pulse Test CLASSIFICATION OF hFE(2) RANK BCX53 BCX53-10 RANGE 63–250 63–160 2012-06 2012-0 BCX53-16 100–250 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS BCX53 SOT-89 Plastic-Encapsulate Transistors Features Static Characteristic • Batch process design, excellent power dissipation offers hFE —— IC 1000 VCE= -2V better reverse leakage current and thermal resistance. COMMON SOD-123H EMITTER profile surface mounted application in order to • Low T =25℃ (mA) -350 o Ta=100 C hFE a optimize board space. -2.0mA -1.8mA efficiency. • Low power loss, high -250 low forward voltage drop. • High current capability,-1.6mA -1.4mA High surge capability. • -1.2mA -200 • Guardring for overvoltage protection. -1.0mA -150 • Ultra high-speed switching. -0.8mA Silicon epitaxial planar chip, metal silicon junction. • -0.6mA -100 of • Lead-free parts meet environmental standards -0.4mA -50MIL-STD-19500 /228 • RoHS product for packing code suffix "G" IB=-0.2mA -0 Halogen free product for packing code suffix -0 -1 -2 -3 -4 -5 "H" -6 VCE DC CURRENT GAIN COLLECTOR CURRENT IC -300 COLLECTOR-EMITTER Mechanical data VOLTAGE 0.146(3.7) 0.130(3.3) 100 o 0.071(1.8) 0.056(1.4) 10 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -10 COLLECTOR CURRENT (V) -800 Method 2026 T =25℃ a • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram -400 -600 Ta=100℃ 0.012(0.3) Typ. Ta=25 C flameI retardant • Epoxy : UL94-V0 rated VBEsat —— C -400 -1000 : Molded plastic, SOD-123H • Case β=10 , • Terminals :Plated terminals, solderable per MIL-STD-750 VCEsat —— β=10 -100 IC -1000 (mA) 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. -300 Dimensions in inches and (millimeters) -200 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -100 T =100℃ a -200 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. -0 For capacitive load, derate current-10by 20% -0.1 -1 -100 -1000 Marking Code IC (mA) VRRM 12 20 Maximum RMS Voltage VRMS VDC IC (MHz) Maximum DC Blocking Voltage fT TRANSITION FREQUENCY Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) 50 CJ Typical Junction Capacitance (Note 1) VCE=-5V Storage Temperature Range 14 21 28 20 30 40 -100 -1000 ——16 VCB / VEB18 50 10 100 60 80 35 42 56 f=1MHz 70 IE=0 / IC=0 50 60 80 Ta=25 C o 100 115 150 120 200 105 140 150 200 1.0 100 Cib 40 120 Cob 10 30 -55 to +150 - 65 to +175 a -40 CHARACTERISTICS -60 COLLECTOR CURRENT Maximum Forward Voltage at 1.0A DC IC —— -80 IC (mA) VF VBE Maximum Average Reverse Current at @T A=25℃ -1000 -1 0.50 IR @T A=125℃ Rated DC Blocking Voltage 1 -0.1 -100 -10 -20 REVERSE FM160-MH VOLTAGE FM180-MH V (V) FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Pc 0.75 COLLECTOR POWER DISSIPATION Pc (W) -20 Cob /15 Cib TSTGo T =25 C 0 -0 -10 -55 to +125 TJ Operating Temperature Range 14 40 C IO Maximum 100Average Forward Rectified Current 13 30 1000 CAPACITANCE —— -1 (mA) FM150-MHCURRENT FM160-MHIC FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR 150 Maximum Recurrent Peak Reverse Voltage fT Ta=25℃ -0 -0.1 (pF) COLLECTOR CURRENT RATINGS IC (mA) Pb Free Produc Typical Characteristics Package outline -400 -100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. COLLECTOR CURRENT THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE NOTES: FM120-M+ 2- Thermal Resistance From Junction to Ambient o Ta=100 C -10 Ta=25℃ -1 0.70 —— 0.9 0.85 Ta 0.92 0.5 10 0.50 0.25 VCE=-2V -0.1 2012-06 -0 0.00 -200 -400 -600 BASE-EMITTER VOLTAGE 2012-0 -800 VBE(mV) -1000 0 25 50 75 WILLAS ELECTRONIC COR AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS BCX53 SOT-89 Plastic-Encapsulate Transistors FM120-M+ THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .181(4.60) Mechanical data retardant • Epoxy : UL94-V0 rated flame.173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .167(4.25) Marking Code .154(3.91) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 12 20 V RRM .023(0.58) 13 30 14 VRMS .016(0.40) 21 28 20 30 40 Maximum DC Blocking Voltage VDC .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) Typical Thermal Resistance (Note 2) 42 60 RΘJA 40 120 TJ TSTG -55 to +125 10 100 115 150 120 200 56 70 105 140 80 100 150 200 -55 to +150 - 65 to +175 .197(0.52) .013(0.32) .017(0.44) FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.014(0.35) .118TYP (3.0)TYP VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 35 50 30 Operating Temperature Range Maximum Forward Voltage at 1.0A DC 18 80 IFSM CJ CHARACTERISTICS 16 60 50 1.0 Typical Junction Capacitance (Note 1) .060TYP (1.50)TYP 40 IO Maximum Average Forward Rectified Current Storage Temperature Range .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.