MMSTA63/MMSTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (MMSTA13/MMSTA14) Ultra-Small Surface Mount Package Ideal for Medium Power Amplification and Switching High Current Gain SOT-323 A Dim Min Max C A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 B C B E G H Mechanical Data · · · · · · · · · K Case: SOT-323, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMSTA63 Marking K2E, K3E (See Page 2) MMSTA64 Marking K3E (see Page 2) Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings M J D E L C 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0° 8° All Dimensions in mm B E @ TA = 25°C unless otherwise specified Characteristic Symbol MMSTA63 MMSTA64 Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V IC -500 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30159 Rev. 3 - 2 1 of 2 www.diodes.com MMSTA63/MMSTA64 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition ¾ V IC = -100mA VBE = 0V OFF CHARACTERISTICS (Note 2) V(BR)CEO -30 Collector Cutoff Current ICBO ¾ -100 nA VCB = -30V, IE = 0 Emitter Cutoff Current IEBO ¾ -100 nA VEB = -10V, IC = 0 hFE 5,000 10,000 10,000 20,000 ¾ ¾ IC = -10mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -1.5 V IC = -100mA, IB = -100mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -2.0 V IC = -100mA, VCE = -5.0V fT 125 ¾ MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Emitter Breakdown Voltage ON CHARACTERISTICS (Note 2) DC Current Gain MMSTA63 MMSTA64 MMSTA63 MMSTA64 SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Ordering Information Notes: (Note 3) Device Packaging Shipping MMSTA63-7 SOT-323 3000/Tape & Reel MMSTA647 SOT-323 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM KxE = Product Type Marking Code, e.g. K2E = MMSTA63 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September KxE Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30159 Rev. 3 - 2 2 of 2 www.diodes.com MMSTA63/MMSTA64