FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. • 650 V @TJ = 150°C • Max. RDS(on) = 199 mΩ • Ultra low gate charge (Typ. Qg = 57 nC) • Low effective output capacitance (Typ. Coss.eff = 160 pF) • 100% avalanche tested Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-CD Power Supply D G TO-220 TO-220F GD S G D S S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCP190N60 FCPF190N60 600 Unit V ±20 -DC -AC V ±30 (f > 1 Hz) -Continuous (TC = 25oC) 20.2 20.2* -Continuous (TC = 100oC) 12.7 12.7* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt - Pulsed (Note 1) (Note 2) 60.6* 400 MOSFET dv/dt A mJ 20 V/ns 100 V/ns (TC = 25oC) 208 39 W - Derate above 25oC 1.67 0.31 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 60.6 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP190N60 FCPF190N60 RθJC Thermal Resistance, Junction to Case 0.6 3.2 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 1 Unit o C/W www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET March 2013 Device Marking FCP190N60 Device FCP190N60 Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF190N60 FCPF190N60 TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V - 0.67 - V/oC - 700 - V Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 2.5 - 3.5 V - 0.17 0.199 Ω - 21 - S ID = 10 mA, Referenced to 25oC VGS = 0 V, ID = 20 A μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 10 A VDS = 20 V, ID = 10 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1.0 MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance - 2220 2950 pF - 1630 2165 pF - 85 128 pF - 42 - pF VDS = 0 V to 480 V, VGS = 0 V - 160 - pF VDS = 380 V, ID = 10 A VGS = 10 V - 57 74 nC - 9 - nC - 21 - nC VDS = 25 V, VGS = 0 V f = 1 MHz (Note 4) f = 1 MHz Ω 1 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 10 A VGS = 10 V, Rg = 4.7 Ω (Note 4) - 20 50 ns - 10 30 ns - 64 138 ns - 5 20 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time - 280 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A dIF/dt = 100 A/μs - 3.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 2 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 o 150 C 10 o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.3 0.1 1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 IS, Reverse Drain Current [A] 0.5 RDS(ON) [Ω], Drain-Source On-Resistance 3 0.4 0.3 VGS = 10V 0.2 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.1 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.5 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 10A 0 0 600 3 12 24 36 48 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 2.0 1.5 1.0 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 10A 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature - FCP190N60 -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area vs. Case Temperature - FCPF190N60 100 100 10μs 10μs ID, Drain Current [A] ID, Drain Current [A] 100μs 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) 0.1 100μs 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) *Notes: o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1000 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 12. Eoss vs. Drain to Source Voltage Switching Capability 25 10 20 8 EOSS, [μJ] ID, Drain Current [A] Figure 11. Maximum Drain Current 15 10 6 4 2 5 0 25 DC *Notes: 0.1 o 1. TC = 25 C 0.01 0.1 160 0 50 75 100 125 o TC, Case Temperature [ C] ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 0 150 4 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Typical Performance Characteristics (Continued) FCP190N60 / FCPF190N60 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FCP190N60 Thermal Response [ZθJC] 1 0.5 0.2 0.1 PDM 0.1 t1 t2 0.05 *Notes: 0.02 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] -1 10 1 Figure 14. Transient Thermal Response Curve - FCPF190N60 Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 t2 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 6 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 7 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 8 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FCP190N60 / FCPF190N60 Rev. C15 10 www.fairchildsemi.com FCP190N60 / FCPF190N60 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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