MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FG3000DV-90DA Dimensions in mm GATE (WHITE) 412 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current ...........3000A ● IT(AV) Average on-state current .......................950A ● VDRM Repetitive peak off state voltage ...................4500V ● Anode short type 0.4 MIN 0.4 MIN φ 70 ± 0.2 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME φ 70±0.2 φ 108 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 90DA 17 17 17 4500 4500 2500 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Unit V V V V V V + : VGK = –2V Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 3375V, Tj = 125°C, CS = 6.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 71°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 40A, Tj = 125°C Recommended value 33 Standard value Ratings 3000 1490 950 17 1.2 × 106 500 10 17 100 900 400 27 100 230 –40 ~ +125 –40 ~ +150 30 ~ 40 1220 Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM IRRM IDRM IRG dv/dt tgt On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 40A, VD = 2250V tgq Turn-off time IGQM VGT IGT Rth(j-f) Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Tj = 125°C, ITM = 3000A, VDM = 3375V, diGQ/dt = –40A/µs VRG = 17V, CS = 6.0µF, LS = 0.3µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — Limits Typ — — — — — — — — — — — — 670 — — — Max 4.0 300 150 300 — 10 30 — 1.5 4000 0.015 Unit V mA mA mA V/µs µs µs A V mA °C/W MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 RATED SURGE ON-STATE CURRENT 25 SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) PERFORMANCE CURVES 20 15 10 5 0 100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ON-STATE VOLTAGE (V) 100 7 5 3 2 PFG(AV) = 100W VGT = 1.5V Tj = 25°C IGT = 4000mA IFGM = 100A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) 2 3 5 7 102 MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.025 THERMAL IMPEDANCE (°C/ W) GATE VOLTAGE (V) 101 7 5 3 2 PFGM = 400W VFGM = 10V 5 7 101 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 102 7 5 3 2 2 3 0.020 0.015 0.010 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 5000 160 4500 150 θ 4000 360° RESISTIVE, INDUCTIVE LOAD 3500 3000 2500 180° 120° θ = 30° 90° 60° 2000 1500 1000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 120 110 100 90 80 70 0 60 200 400 600 800 1000 MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 5000 180° 120° 90° 60° θ = 30° 2000 θ 0 360° RESISTIVE, INDUCTIVE LOAD 0 500 1000 1500 110 5000 4000 3000 2000 1000 –20 20 60 100 JUNCTION TEMPERATURE (°C) 140 1000 90 80 70 θ = 30° 60° 120° 270° 90° 180° DC 500 0 1000 1500 2000 AVERAGE ON-STATE CURRENT (A) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT (mA) VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE 800 360° RESISTIVE, INDUCTIVE LOAD 100 50 2000 6000 0 –60 600 θ 60 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 7000 400 130 AVERAGE ON-STATE CURRENT (A) 8000 200 90° 120° 180° 120 270° 1000 0 60° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) DC 3000 θ = 30° AVERAGE ON-STATE CURRENT (A) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) 4000 360° RESISTIVE, INDUCTIVE LOAD 130 500 0 θ 140 TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 IT = 3000A VD = 2250V diT/dt = 500A/µs diG/dt = 20A/µs Tj = 125°C 8.0 tgt 6.0 4.0 2.0 0 td 0 20 40 60 80 100 TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 40 VD = 2250V 35 VDM = 3375V diGQ/dt = –40A/µs VRG = 17V CS = 6.0µF LS = 0.3µH 25 Tj = 125°C 30 20 tgq 15 ts 10 5 0 0 1000 2000 3000 4000 TURN OFF CURRENT (A) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 VD = 2250V VDM = 3375V IT = 3000A 40 VRG = 17V CS = 6.0µF LS = 0.3µH 30 Tj = 125°C tgq 20 ts 10 0 20 700 600 500 400 VD = 2250V VDM = 3375V diGQ/dt = –40A/µs VRG = 17V CS = 6.0µF LS = 0.3µH Tj = 125°C 300 200 100 0 1000 2000 3000 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) 60 70 1000 600 400 VD = 2250V VDM = 3375V IT = 3000A VRG = 17V CS = 6.0µF LS = 0.3µH Tj = 125°C 200 0 20 40 60 80 100 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) TURN OFF SWITCHING ENERGY (MAXIMUM) 10 SWITCHING ENERGY Eoff (J/P) VD = 2250V 7 IGM = 40A diG/dt = 10A/µs CS = 6.0µF 6 RS = 5Ω Tj = 125°C 5 diT/dt = 500A/µs 4 300A/µs 3 2 100A/µs 1 0 800 0 4000 8 SWITCHING ENERGY Eon (J/P) 50 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 800 0 40 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 0 30 1000 2000 3000 4000 TURN ON CURRENT (A) 5000 9 CS = 3.0µF 8 4.0µF 6.0µF 7 6 5 4 VD = 2250V VDM = 3375V diGQ/dt = –40A/µs VRG = 17V LS = 0.3µH Tj = 125°C 3 2 1 0 0 1000 2000 3000 4000 5000 TURN OFF CURRENT (A) Aug.1998