PD - 94927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
Applications
l
l
HEXFET® Power MOSFET
High frequency DC-DC converters
Lead-Free
VDSS RDS(on) max
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
150V
0.045:
ID
41A
TO-220AB TO-220 FullPak
D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
Max.
Units
41
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
29
IDM
Pulsed Drain Current
164
PD @TA = 25°C
Power Dissipation, D Pak
3.1
PD @TC = 25°C
Power Dissipation, TO-220
200
PD @TC = 25°C
Power Dissipation, Fullpak
48
c
2
A
W
Linear Derating Factor, TO-220
1.3
W/°C
Linear Derating Factor, Fullpak
0.32
± 30
V
VGS
Gate-to-Source Voltage
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
e
2.7
-55 to + 175
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
1.1(10)
N•m (lbf•in)
Thermal Resistance
Typ.
Max.
Units
RθJC
Junction-to-Case
Parameter
–––
0.75
°C/W
RθJC
Junction-to-Case, Fullpak
–––
3.14
Rθcs
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient, TO-220
–––
62
RθJA
h
Junction-to-Ambient, D Pak i
RθJA
Junction-to-Ambient, Fullpak
Notes
2
h
–––
40
–––
65
through are on page 12
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1
08/10/06
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
–––
V
Conditions
VGS = 0V, ID = 250µA
150
–––
Breakdown Voltage Temp. Coefficient
–––
0.17
–––
Static Drain-to-Source On-Resistance
–––
–––
0.045
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 25A
f
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
25
µA
VDS = 150V, VGS = 0V
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
VDS = 120V, VGS = 0V, TJ = 150°C
nA
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
S
Conditions
VDS = 50V, ID = 25A
gfs
Qg
Forward Transconductance
18
–––
–––
Total Gate Charge
–––
72
110
Qgs
Gate-to-Source Charge
–––
21
31
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
52
VGS = 10V
td(on)
Turn-On Delay Time
–––
16
–––
VDD = 75V
tr
Rise Time
–––
63
–––
ID = 25A
td(off)
Turn-Off Delay Time
–––
25
–––
tf
Fall Time
–––
14
–––
VGS = 10V
Ciss
Input Capacitance
–––
2520
–––
VGS = 0V
Coss
Output Capacitance
–––
510
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
Coss
Output Capacitance
–––
3090
–––
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
230
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
250
–––
VGS = 0V, VDS = 0V to 120V
ID = 25A
nC
ns
VDS = 120V
RG = 2.5Ω
f
f
VDS = 25V
pF
g
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
Diode Characteristics
Parameter
d
c
Typ.
–––
Max.
470
–––
25
A
–––
20
mJ
Min. Typ. Max. Units
Units
mJ
Conditions
IS
Continuous Source Current
–––
–––
41
ISM
(Body Diode)
Pulsed Source Current
–––
–––
164
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
trr
Reverse Recovery Time
–––
170
260
ns
TJ = 25°C, IF = 25A
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
D
G
S
f
f
–––
1.3
1.9
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
1000
1000
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
1
0.1
100
20µs PULSE WIDTH
TJ = 25 °C
6.0V
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 175 ° C
TJ = 25 ° C
10
V DS = 25V
20µs PULSE WIDTH
8
9
10
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
3.0
7
1
VDS , Drain-to-Source Voltage (V)
1000
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
Fig 1. Typical Output Characteristics
1
6.0V
10
VDS , Drain-to-Source Voltage (V)
6
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
TOP
11
ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds
Crss = C gd
Coss = C ds + Cgd
10000
Ciss
1000
Coss
100
Crss
ID = 25A
VDS = 120V
VDS = 75V
VDS = 30V
16
12
8
4
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
1000
40
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
TJ = 175 ° C
10us
100
10
TJ = 25 ° C
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
20
SHORTED
VGS , Gate-to-Source Voltage (V)
100000
1.8
1
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
50
VGS
40
ID , Drain Current (A)
RD
V DS
RG
D.U.T.
+
-VDD
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
PDM
0.10
t1
0.05
0.02
0.01
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
EAS , Single Pulse Avalanche Energy (mJ)
1200
15V
VDS
D.U.T
RG
IAS
VGS
20V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
BOTTOM
BOTTOM
25A
TOP
1000
L
IIDD
7.3A
10A
13A
21A
18A
TOP
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN 1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
4 - DRAIN 3- EMITTER
HEXFET
2 3
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
Note: "P" in assembly line
position indicates "Lead-Free"
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
8
3$57180%(5
'$7(&2'(
<($5 :((.
/,1(&
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
(;$03/( 7+,6,6$1,5),*
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(.
Note: "P" in assembly line
position indicates "Lead-Free"
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,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
,5 ) , *
.
'$7(&2'(
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9
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
7 + ,6 ,6 $ 1 ,5 ) 6 : ,7 +
3 $ 5 7 1 8 0 % ( 5
/ 2 7 & 2 ' ( ,1 7 ( 5 1 $ 7 ,2 1 $ /
$ 6 6 ( 0 % / ( ' 2 1 : : 5 ( & 7 ,) ,( 5
) 6
/2*2
,1 7 + ( $ 6 6 ( 0 % / < / ,1 ( / ' $ 7 ( & 2 ' (
1 R WH 3 LQ D V V H P E O\ O LQ H
$ 66 (0 %/ <
S R V L WLR Q LQ G LF D WH V / H D G ) UH H / 2 7 & 2 ' (
< ( $ 5 : ( ( . / ,1 ( /
OR
,1 7( 5 1 $7,2 1 $ /
5 ( & 7 ,),( 5
/2 * 2
$6 6 ( 0 % /<
/2 7& 2 ' (
10
3 $5 71 8 0 %( 5
) 6
' $7 ( & 2 ' (
3 ' ( 6 ,* 1 $7( 6 /( $' )5 ( (
3 5 2 ' 8 & 7 2 3 7,2 1 $/
< ( $5 : ( ( . $ $6 6 ( 0 % /<6 ,7( & 2 ' (
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IRFB/IRFIB/IRFS/IRFSL41N15DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
(;$03/( 7+,6,6$1,5//
/27&2 '(
$66(0%/('2 1::
,17+($66(0%/</,1(&
1RWH3LQDVVHP EO\OLQH
SRVLWLRQLQGLFDWHV/HDG)UHH
,17(51$7,2 1$/
5(&7,),(5
/2 *2
$66(0%/<
/27&2'(
3$571 80%(5
'$7(&2 '(
<($5 :((.
/,1(&
OR
,17(51$7,21$/
5(&7,),(5
/2* 2
$66(0%/<
/2 7&2 '(
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3$57180%(5
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3 ' (6,*1$7(6/($')5((
352 '8&7 237,2 1$/
<($5 :((.
$ $66(0%/<6,7(&2 '(
11
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 25A.
ISD ≤ 25A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
TO-220AB & TO-220 FullPak packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2006
12
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/