CHENMKO ENTERPRISE CO.,LTD CHT848BWPT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. (2) * Low colloector-emitter saturation. * High saturation current capability. (3) MARKING (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * HFE(P):RN * HFE(Q):RO * HFE(Y):RP 0.8~1.1 0.05~0.2 0~0.1 0.1Min. 3 CIRCUIT 2.0~2.45 1 2 SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 30 V collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 0.1 A PC Collector power dissipation − 0.2 − 0.3 −65 +150 °C − 150 °C V CBO collector-base voltage V CEO Note2 Tstg Tj storage temperature junction temperature W Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 7X5X0.6mm ceramic board. 2004-10 RATING CHARACTERISTIC ( CHT848BWPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS ICBO hFE collector cut-off current DC current transfer ratio IE = 0; VCB = 30 V VCE /I C =5V/2 mA VBEsat collector-base saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5 mA collector-emitter saturation voltage VCEsat VBE(on) base-emitter satur ation voltage MIN. − Typ. − MAX. UNIT − 15 800 nA − − 700 900 − − IC = 10 mA ; I B = 0.5 mA − 90 250 mV mV mV IC = 100 mA ; I B = 5 mA IC = 2 mA;VCE= 5.0 V − 0.58 − 200 600 mV 0.66 − 0.70 0.72 110 Cib emitter input capacitance IC = 10mA;VCE= 5.0 V IC = 0; VCB = 0.5V ; f = 1 MH z Cob collector output capacitance IE = 0; VCB = 10V ; f = 1 MH z fT transition frequency IE = 10 mA; VCE = 5 V ; f = 100 MHz − NF noise figure VCE=5V , IC=200uA , F=1KHz , RG=2K V V pF − 9 − 3.5 − 6 300 − MHz 10 dB − 2 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE Classification P:110 to 220 Q: 200 to 450, Y: 420 to 800 RATING CHARACTERISTIC CURVES ( CHT848BWPT) fig1.Static Characteristic fig2.DC current Gain 10000 IB = 400µA IB = 350µA 80 VCE = 5V IB = 300µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 100 IB = 250µA 60 IB = 200µA IB = 150µA 40 IB = 100µA 20 1000 100 IB = 50µA 10 0 0 4 8 12 16 VCE[V], COLLECTOR-EMITTER VOLTAGE 20 1 10 100 IC[mA], COLLECTOR CURRENT 1000 RATING CHARACTERISTIC CURVES ( CHT848BWPT) fig3.Base-Emitter Stauration Voltage fig4.Base-Emitter On Voltage 10000 100 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Collector-Emitter Stauration Voltage V BE(sat) 1000 100 V CE(sat) 10 1 10 100 VCE = 2V 10 1 0.1 0.0 1000 0.2 IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE f=1MHz 10 1 0.1 100 VCB[V], COLLECTOR-BASE VOLTAGE 0.8 1.0 1.2 fig6.Current Gain Bandwidth Product 1000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 10 0.6 VBE[V], BASE-EMITTER VOLTAGE fig5.Collector Output Capacitance 1 0.4 1000 VCE =5V 100 10 1 0.1 1 10 IC[mA], COLLECTOR CURRENT 100