Chenmko CHT848BWPT Npn general purpose transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT848BWPT
SURFACE MOUNT
NPN General Purpose Transistor
VOLTAGE 30 Volts
CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SC-70/SOT-323
* Surface mount package. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
(2)
* Low colloector-emitter saturation.
* High saturation current capability.
(3)
MARKING
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
* HFE(P):RN
* HFE(Q):RO
* HFE(Y):RP
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
CIRCUIT
2.0~2.45
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
30
V
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
0.1
A
PC
Collector power dissipation
−
0.2
−
0.3
−65
+150
°C
−
150
°C
V CBO
collector-base voltage
V CEO
Note2
Tstg
Tj
storage temperature
junction temperature
W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. When mounted on a 7X5X0.6mm ceramic board.
2004-10
RATING CHARACTERISTIC ( CHT848BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
collector cut-off current
DC current transfer ratio
IE = 0; VCB = 30 V
VCE /I C =5V/2 mA
VBEsat
collector-base saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5 mA
collector-emitter saturation
voltage
VCEsat
VBE(on)
base-emitter satur ation voltage
MIN.
−
Typ.
−
MAX.
UNIT
−
15
800
nA
−
−
700
900
−
−
IC = 10 mA ; I B = 0.5 mA
−
90
250
mV
mV
mV
IC = 100 mA ; I B = 5 mA
IC = 2 mA;VCE= 5.0 V
−
0.58
−
200
600
mV
0.66
−
0.70
0.72
110
Cib
emitter input capacitance
IC = 10mA;VCE= 5.0 V
IC = 0; VCB = 0.5V ; f = 1 MH z
Cob
collector output capacitance
IE = 0; VCB = 10V ; f = 1 MH z
fT
transition frequency
IE = 10 mA; VCE = 5 V ; f = 100 MHz −
NF
noise figure
VCE=5V , IC=200uA , F=1KHz , RG=2K
V
V
pF
−
9
−
3.5
−
6
300
−
MHz
10
dB
−
2
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE Classification P:110 to 220 Q: 200 to 450, Y: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT848BWPT)
fig1.Static Characteristic
fig2.DC current Gain
10000
IB = 400µA
IB = 350µA
80
VCE = 5V
IB = 300µA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
100
IB = 250µA
60
IB = 200µA
IB = 150µA
40
IB = 100µA
20
1000
100
IB = 50µA
10
0
0
4
8
12
16
VCE[V], COLLECTOR-EMITTER VOLTAGE
20
1
10
100
IC[mA], COLLECTOR CURRENT
1000
RATING CHARACTERISTIC CURVES ( CHT848BWPT)
fig3.Base-Emitter Stauration Voltage
fig4.Base-Emitter On Voltage
10000
100
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Collector-Emitter Stauration Voltage
V BE(sat)
1000
100
V CE(sat)
10
1
10
100
VCE = 2V
10
1
0.1
0.0
1000
0.2
IC[mA], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
f=1MHz
10
1
0.1
100
VCB[V], COLLECTOR-BASE VOLTAGE
0.8
1.0
1.2
fig6.Current Gain Bandwidth Product
1000
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100
10
0.6
VBE[V], BASE-EMITTER VOLTAGE
fig5.Collector Output Capacitance
1
0.4
1000
VCE =5V
100
10
1
0.1
1
10
IC[mA], COLLECTOR CURRENT
100
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