Siemens BSM200GB120DL Igbt power module (low loss igbt low inductance halfbridge including fast free- wheeling diodes) Datasheet

BSM 200 GB 120 DL
IGBT Power Module
Preliminary data
• Low Loss IGBT
• Low inductance halfbridge
• Including fast free- wheeling diodes
• Package with insulated metal base plate
Type
VCE
IC
BSM 200 GB 120 DL
1200V 340A
Package
Ordering Code
HALF-BRIDGE 2
C67076-A2300-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
340
TC = 80 °C
200
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
680
TC = 80 °C
400
Ptot
Power dissipation per IGBT
TC = 25 °C
W
1400
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.09
Diode thermal resistance, chip case
RthJCD
≤ 0.18
Insulation test voltage, t = 1min.
Vis
Creepage distance
+ 150
°C
-40 ... + 125
K/W
2500
Vac
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
sec
40 / 125 / 56
Feb-14-1997
BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 8 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 200 A, Tj = 25 °C
-
2.2
2.6
VGE = 15 V, IC = 200 A, Tj = 125 °C
-
2.5
3
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
-
10
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
-
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
-
400
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 200 A
Input capacitance
110
nF
-
13
-
-
2
-
-
1
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Feb-14-1997
BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
Rise time
-
160
-
-
80
-
-
550
-
-
90
-
tr
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 200 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IF = 200 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time
trr
µs
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.5
-
Qrr
µC
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C
-
10
-
Tj = 125 °C
-
25
-
Semiconductor Group
3
Feb-14-1997
BSM 200 GB 120 DL
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
1500
tp = 42.0µs
W
1300
Ptot
A
100 µs
IC
1200
1100
10 2
1000
900
800
1 ms
700
600
10 1
500
400
10 ms
300
200
100
0
0
20
40
60
80
100
120
°C
10 0
0
10
160
10
1
10
DC 3
10
2
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
340
K/W
A
IC
V
VCE
280
ZthJC
10 -1
240
10 -2
200
D = 0.50
160
10
-3
0.20
120
0.10
0.05
80
10 -4
0.02
single pulse
0.01
40
0
0
20
40
60
80
100
120
°C
160
TC
Semiconductor Group
10 -5
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Feb-14-1997
BSM 200 GB 120 DL
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
400
A
IC
300
400
A
17V
15V
13V
11V
9V
7V
IC
300
250
250
200
200
150
150
100
100
50
50
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
400
A
IC
300
250
200
150
100
50
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Feb-14-1997
BSM 200 GB 120 DL
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 200 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
20
V
nF
VGE
16
C
600 V
14
800 V
Ciss
10 1
12
10
Coss
8
10 0
Crss
6
4
2
0
0
200
400
600
800
1000
10 -1
0
1400
5
10
15
20
25
30
V
40
VCE
QGate
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
2.5
12
ICpuls/IC
ICsc/IC
di/dt = 1000A/µs
3000A/µs
5000A/µs
8
1.5
6
1.0
4
° allowed number of
short circuit: <1000
° time between short
2 circuit: >1s
0.5
0.0
0
0
200
400
Semiconductor Group
600
800
1000 1200
V
1600
VCE
6
0
200
400
600
800
1000 1200
V
1600
VCE
Feb-14-1997
BSM 200 GB 120 DL
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
par.: VCE = 600 V, VGE = ± 15 V, IC = 200 A
10 4
10 4
ns
ns
t
tdoff
t
10 3
10 3
tdoff
tdon
tr
tdon
tr
10 2
tf
10 2
tf
10 1
0
100
200
300
A
10 1
0
500
10
20
30
40
IC
Ω
60
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
par.: VCE = 600V, VGE = ± 15 V, IC = 200 A
130
130
mWs
mWs
110
E
110
E
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
10
0
0
Eon
Eoff
Eoff
20
10
Eon
100
200
300
A
500
IC
Semiconductor Group
7
0
0
10
20
30
40
Ω
60
RG
Feb-14-1997
BSM 200 GB 120 DL
Forward characteristics of fast recovery
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
reverse diode IF = f(VF)
parameter: Tj
10 0
400
K/W
A
IF
Diode
ZthJC
300
10 -1
250
Tj=125°C
Tj=25°C
200
10 -2
D = 0.50
0.20
150
0.10
0.05
10 -3
100
0.02
single pulse
0.01
50
0
0.0
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
VF
Semiconductor Group
10 -4
-5
10
8
Feb-14-1997
BSM 200 GB 120 DL
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
Semiconductor Group
9
Feb-14-1997
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