APTM20HM08FG Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application VB US • • • • Q3 Features S3 Q2 Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS • G2 0/VBUS S1 S2 S3 S4 G3 G4 Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • OUT2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V mΩ W A July, 2006 S1 OUT2 G3 OUT1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20HM08FG– Rev 2 Q1 APTM20HM08FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IS VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 8 3 Min VGS = 10V VBus = 100V ID = 208A Typ 14.4 4.66 0.29 280 Unit Max Unit µA mΩ V nA nF nC 134 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A R G = 2.5Ω 64 116 1698 µJ 1858 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω Test Conditions ns 88 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω 1872 µJ 1972 Min Typ Tj = 25°C Max 208 155 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 208A IS = - 208A VR = 133V diS/dt = 200A/µs Max 375 1500 10 5 ±150 106 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Tj = 25°C 1.8 Tj = 125°C 6.8 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM20HM08FG– Rev 2 Symbol APTM20HM08FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.16 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20HM08FG– Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM20HM08FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 600 VGS=15V 10V 1000 ID, Drain Current (A) 9V 800 8.5V 600 8V 7.5V 400 7V 200 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25°C 100 T J=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 200 150 100 50 0.8 0 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 4–6 APTM20HM08FG– Rev 2 ID, Drain Current (A) 1200 APTM20HM08FG 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1ms 10 0.6 10ms Single pulse TJ=150°C TC=25°C 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25°C VDS=100V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 VDS=160V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 5–6 APTM20HM08FG– Rev 2 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20HM08FG Delay Times vs Current Rise and Fall times vs Current 160 120 60 120 tr and tf (ns) t d(on) and td(off) (ns) t d(off) VDS=133V RG=2.5Ω T J=125°C L=100µH 80 t d(on) 40 100 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 I D, Drain Current (A) 0 VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy (mJ) Eoff Eon 2 1 5 4 Eoff 3 Eon 2 1 0 50 100 150 200 250 300 350 0 I D, Drain Current (A) Operating Frequency vs Drain Current 250 ZVS V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS Hard switching 0 25 50 75 10 15 20 25 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 200 5 Gate Resistance (Ohms) 350 50 VDS=133V ID=208A TJ=125°C L=100µH Eoff 0 100 100 150 200 250 300 350 ID, Drain Current (A) 6 3 150 50 Switching Energy vs Gate Resistance Switching Energy vs Current 4 Eon and Eoff (mJ) tf 80 20 Frequency (kHz) V DS=133V R G=2.5Ω T J=125°C L=100µH 140 100 1000 TJ =150°C 100 TJ =25°C 10 1 100 125 150 175 200 I D, Drain Current (A) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20HM08FG– Rev 2 July, 2006 VSD, Source to Drain Voltage (V)