IXYS IXFP12N50PM Polar power mosfet hiperfet Datasheet

PolarTM Power MOSFET
HiPerFETTM
IXFP12N50PM
VDSS
ID25
RDS(on)
(Electrically Isolated Tab)
trr
= 500V
= 6A
Ω
≤ 500mΩ
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
OVERMOLDED TO-220
(IXFP...M) OUTLINE
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
6
30
A
A
IA
EAS
TC = 25°C
TC = 25°C
12
600
A
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
10
V/ns
PD
TC = 25°C
50
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
2.5
g
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
500
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 6A, Note 1
V
5.5
Isolated Tab
D
S
G = Gate
S = Source
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Characteristic Values
Min. Typ. Max.
VGS(th)
G
Easy to mount
Space savings
V
±100 nA
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
5 μA
250 μA
500 mΩ
DS99510F(04/08)
IXFP12N50PM
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10V, ID = 6A, Note 1
7.5
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
13
S
1830
pF
182
pF
16
pF
22
ns
27
ns
65
ns
tf
20
ns
Qg(on)
29
nC
11
nC
10
nC
td(on)
tr
VGS = 10V, VDS = 0.5
td(off)
RG = 10Ω (External)
Qgs
VGS= 10V, VDS = 0.5
VDSS, ID = 6A
VDSS, ID = 6A
Qgd
2.5 °C/W
RthJC
Source-Drain Diode
ISOLATED TO-220 (IXFP...M)
1
2
3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
12
A
ISM
Repetitive, pulse width limited by TJM
48
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
300
ns
μC
A
2.8
18.2
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFP12N50PM
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
12
30
VGS = 10V
8V
24
21
8
7V
I D - Amperes
I D - Amperes
VGS = 10V
27
10
6
4
18
15
7V
12
9
6
2
6V
6V
3
0
0
0
1
2
3
4
5
6
7
0
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Normalized to I D = 6A Value
vs. Junction Temperature
@ 125ºC
12
2.6
VGS = 10V
2.4
7V
8
6
6V
4
VGS = 10V
2.2
R D S ( o n ) - Normalized
10
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
2.0
1.8
1.6
ID = 12A
1.4
ID = 6A
1.2
1.0
0.8
2
0.6
5V
0
0.4
0
2
4
6
8
10
12
-50
-25
VD S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D = 6A Value
vs. Drain Current
Fig. 6. Drain Curre nt v s. Case
Te mpe rature
3.4
7
VGS = 10V
3.0
6
TJ = 125ºC
2.6
5
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.8
TJ = 25ºC
1.4
4
3
2
1.0
1
0.6
0
0
3
6
9
12
I
D
15
18
- Amperes
© 2008 IXYS CORPORATION, All rights reserved
21
24
27
30
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXFP12N50PM
Fig. 8. Transconductance
20
27
18
24
16
21
14
18
TJ = - 40ºC
15
25ºC
125ºC
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
12
TJ = 125 ºC
10
25ºC
- 40ºC
8
12
9
6
6
4
3
2
0
0
4.5
5.0
5.5
6.0
6.5
7.0
0
7.5
2
4
6
Fig. 9. Source Current vs. Source-To-Drain
Voltage
10
12
14
16
18
20
24
27
30
- Amperes
10
9
VDS = 250V
8
ID = 6A
7
IG = 10m A
30
VG S - Volts
25
I S - Amperes
D
Fig. 10. Gate Charge
35
20
15
TJ = 125 ºC
6
5
4
3
10
2
TJ = 25ºC
5
1
0
0
0.4
0.5
0.6
0.7
VS
D
0.8
0.9
0
1.0
3
6
9
- Volts
Q
12
G
15
18
21
- nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
100
10000
f = 1MHz
RDS(on) Limit
Ciss
I D - Amperes
Capacitance - picoFarads
8
I
V G S - Volts
1000
Coss
25µs
10
100µs
1ms
1
100
10ms
TJ = 150ºC
Crss
DC
TC = 25ºC
0.1
10
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFP12N50PM
Fig. 13. Maximum Transient Thermal Impedance
Z ( t h ) J C - ºC / W
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_12N50P(4J)4-14-08-D
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