Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHL21336N 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc DC Supply Voltage RF Input Power Pin +5 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 500 525 mA Power Gain (f = 2140 MHz) Gp 30 31 33 dB Gain Flatness (f = 2110 - 2170 MHz) GF — 0.15 0.4 dB Power Output @ 1 dB Compression (f = 2140 MHz) P1dB 34 35 — dBm Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) ITO 44 45 — dBm Noise Figure NF — 4.5 5 dB (f = 2170 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHL21336N 1 TYPICAL CHARACTERISTICS 55 VDD = 26 Vdc TC = 25_C Gp 30 VDD = 26 Vdc TC = 25_C 50 20 P1dB, ITO (dBm) ITO 10 0 ORL −10 IRL 45 40 P1dB 35 −20 30 −30 −40 1400 1600 1800 2000 2200 2400 2600 25 1800 2800 1900 2000 2100 2200 2300 2400 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 2. P1dB, ITO versus Frequency 40 600 48 G p , POWER GAIN (dB) VDD = 26 Vdc f = 2140 MHz 47 37 550 30 500 I DD (mA) 46 Gp IDD 36 ITO 45 35 P1dB 44 34 450 43 20 −40 −20 0 20 40 60 80 100 400 120 42 −40 33 −20 0 20 40 60 80 100 TEMPERATURE (_C) TEMPERATURE (_C) Figure 3. Power Gain, IDD versus Temperature Figure 4. ITO, P1dB versus Temperature 2.4 −1420 PHASE ( _ ) −1440 GROUP DELAY −1460 2.1 −1480 −1500 −40 2 −20 0 20 40 60 80 100 TEMPERATURE (_C) Figure 5. Phase(1), Group Delay(1) versus Temperature 1.9 120 VDD = 26 Vdc f = 2110 − 2170 MHz 0.5 2.3 2.2 PHASE 0.6 G F , GAIN FLATNESS (dB) VDD = 26 Vdc f = 2140 MHz GROUP DELAY (nS) −1400 0.4 32 120 0.6 0.5 0.4 GF 0.3 0.3 0.2 0.2 PHASE LINEARITY (_ ) 25 P1dB (dBm) 35 2500 38 VDD = 26 Vdc f = 2140 MHz ITO (dBm) G p , POWER GAIN/RETURN LOSS (dB) 40 PHASE LINEARITY 0.1 0 −40 0.1 −20 0 20 40 60 80 100 0 120 TEMPERATURE (_C) Figure 6. Gain Flatness, Phase Linearity versus Temperature 1. In Production Test Fixture MHL21336N 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS G p , POWER GAIN (dB) 31.6 47.5 47 600 IDD 36.5 500 Gp 400 I DD (mA) ITO (dBm) 46.5 31.4 31.2 37 f = 2140 MHz TC = 25_C 36 P1dB 46 35.5 ITO 45.5 31 45 200 23 24 25 26 27 28 29 35 44.5 22 30 34.5 34 23 24 25 26 27 28 VOLTAGE (VOLTS) VOLTAGE (VOLTS) Figure 7. Power Gain, IDD versus Voltage Figure 8. ITO, P1dB versus Voltage −1435 2.3 f = 2140 MHz TC = 25_C 2.25 PHASE ( _ ) GROUP DELAY 0.35 2.2 0.3 0.25 0.25 GF 0.2 −1437 30 f = 2110 − 2170 MHz TC = 25_C 0.3 −1436 29 0.35 GROUP DELAY (nS) G F , GAIN FLATNESS (dB) 30.8 22 300 0.2 0.15 PHASE −1438 2.15 0.15 PHASE LINEARITY 0.1 0.1 0.05 −1439 22 2.1 23 24 25 26 27 28 29 Figure 9. Group Voltage 1. In Production Test Fixture Delay(1) 0 22 0.05 0 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) VOLTAGE (VOLTS) Phase(1), 30 P1dB (dBm) 700 f = 2140 MHz TC = 25_C PHASE LINEARITY (_ ) 31.8 versus Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL21336N RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) T SEATING PLANE M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHL21336N 4 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MHL21336N Document RF DeviceNumber: Data MHL21336N Rev. 7, 8/2006 Freescale Semiconductor 5