NGTD14T65F2 IGBT Die Trench Field Stop II IGBT Die for motor drive and inverter applications. Features • Extremely Efficient Trench with Field Stop Technology • Low VCE(sat) Loss Reduces System Power Dissipation www.onsemi.com Typical Applications • • • • Industrial Motor Drives Solar Inverters UPS Systems Welding VRCE = 650 V IC = Limited by TJ(max) MAXIMUM RATINGS IGBT DIE Parameter Symbol Value Unit Collector−Emitter Voltage, TJ = 25°C VCE 650 V IC (Note 1) A IC, pulse 120 A VGE ±20 V TJ −55 to +175 °C TSC 10 ms DC Collector Current, limited by TJ(max) Pulsed Collector Current (Note 2) Gate−Emitter Voltage Maximum Junction Temperature Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. 2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V. C G E DIE OUTLINE MECHANICAL DATA Parameter Value Unit 3550 x 3550 mm2 See die layout mm2 Gate Pad Size 410 x 670 mm2 Die Thickness 3 mils Die Size Emitter Pad Size Wafer Size 150 mm 4 mm AISI Top Metal 2 mm TiNiAg Back Metal Max possible chips per wafer 996 Passivation frontside Oxide−Nitride Reject ink dot size 25 mils Recommended storage environment: In original container, in dry nitrogen, or temperature of 18−28°C, 30−65%RH Type: Bare Wafer in Jar Storage time: < 36 months Type: Die on tape in ring−pack Storage time: < 3 months ORDERING INFORMATION Device Inking? Shipping NGTD14T65F2WP Yes Bare Wafer in Jar NGTD14T65F2SWK Yes Sawn Wafer on Tape © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NGTD14T65F2WP/D NGTD14T65F2 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 500 mA V(BR)CES 650 Collector−Emitter Saturation Voltage VGE = 15 V, IC = 35 A VCE(sat) Gate−Emitter Threshold Voltage VGE = VCE, IC = 150 mA VGE(TH) Collector−Emitter Cutoff Current VGE = 0 V, VCE = 650 V Gate Leakage Current VGE = 20 V, VCE = 0 V Typ Max Units STATIC CHARACTERISTICS V 1.7 2.0 V 5.5 6.5 V ICES 0.5 mA IGES 200 nA 4.5 DYNAMIC CHARACTERISTICS Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Output Capacitance Reverse Transfer Capacitance Cies 3115 pF Coes 149 pF Cres 88 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT E G E E = Emitter pad G = Gate pad All dimensions in mm www.onsemi.com 2 NGTD14T65F2 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTD14T65F2WP/D