CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET MEN09N03BJ3 BVDSS 30V ID 50A RDSON 9mΩ Features • VDS=30V, ID=50A, RDS(ON)=9mΩ • Low Gate Charge • Simple Drive Requirement • RoHS compliant package Symbol • Repetitive Avalanche Rated • Fast Switching Characteristic Outline MEN09N03BJ3 TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω Repetitive Avalanche Energy @ L=0.05mH Power Dissipation (TC=25℃) Power Dissipation (TC=100℃) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg Limits 30 ±20 50 35 140 *1 37.5 70 15 *2 60 32 -55~+175 Unit V V A A A A mJ mJ W W °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle≤1% MEN09N03BJ3 CYStek Product Specification Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 30 1.0 50 - 1.7 20 7.5 12 3.0 ±100 1 25 9 15 V V S nA VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VGS =10V, VDS=10V VGS =10V, ID=25A VGS =5V, ID=20A - 1.7 23 13 4.7 7.4 10 8 30 5 2020 275 160 - - 22 180 12 50 140 1.3 - Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) *RDS(ON) Dynamic Rg *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *IRM(REC) *Qrr μA A mΩ Ω VGS=15mV, VDS=0, f=1MHz nC ID=25A, VDS=15V, VGS=10V ns VDS=15V, ID=25A, VGS=10V, RG=2.7Ω, RD=0.6Ω pF VGS=0V, VDS=15V, f=1MHz A V ns A nC IF=IS, VGS=0 IF=IS, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MEN09N03BJ3 MEN09N03BJ3 Package TO-252 (RoHS compliant) Shipping Marking 2500 pcs / Tape & Reel 09N03 CYStek Product Specification Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves ON-REGION CHARACTERISTIC 10V 7V 6V V GS= 3.5V RDS(ON), NORMALIZED R ,NORMALIZED DRAINSOURCE ON-RESISTANCE DRAIN - SOURCE ON - RESISTANCE 80 3 5V 4.5V 60 3.5V 20 V = 3.0V GS 0 0 1 0.5 2.5 4.5V 2 5V 5.5V 1.5 6V 7V DS(ON) 4V 40 D ID,I DRAIN-SOURCE CURRENT(A) ,DRAIN - SOURCE CURRENT( A) ON-RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE ON-REGION CHARACTERISTIC 100 2.5 3 3.5 1.5 2 V ,DRAIN- SOURCEVOLTAGE( V) 4 4.5 10V 1 0.5 0 5 ON-RESISTANCE VARIATION WITH GATE TO SOURCE VOLTAGE ON-RESISTANCE VARIATION WITH TEMPERATURE ON- RESISTANCE VARIATION WITH TEMP ERATURE ON-RESISTANCEVARIATION WITHGATE-TO-SOURCEVOLTAGE 0.030 1.8 ID = 25A VGS= 10V RDS(ON) , ON-RESISTANCE(OHM) R ,ON-RESISTANCE(OHM) ID = 25A 1.6 1.4 1.2 DS(ON) 1.0 0.8 0.025 0.020 0.015 TA = 25°C 0.010 0 -50 -25 0 25 50 75 100 125 150 TA = 125°C 175 6 4 VGS ,GATETOSOURCEVOLTAGE 2 j BODY DIODE FORWARD VOLTAGE VARIATION WITH BODY DIODECURRENT FORWARD VOLTAG EVARIATION WITH SOURCE SOURCE AND TEMPERATURE TRANSFER CHARACTERISTICS TRANSFERCHAR ACTERISTICS CURRENTAND TEMPERATURE 50 60 VDS=10V VGS = 0V TA = -55 °C 40 25 °C 125 °C 30 20 10 I S ,REVERSEDRAIN DRAINCURRENT(A) CURRENT( A ) IS, REVERSE VDS= 10V 0 10 8 VGS, GATE TO SOURCE VOLTAGE(V) TION TEMPER ATURE(° C) TTJ,,JUNC JUNCTION TEMPERATURE(℃) ID, DRAIN CURRENT I D,DRAIN CURRENT( AA) ) DS(ON) 100 D DS RDS(ON), NORMALIZED DRAINR ,NORMALIZED SOURCE DRAINON-RESISTANCE - SOURCE ON - RESISTANCE 80 ID, DRAIN CURRENT(A) I ,DRAIN CURRENT( A ) VDS, DRAIN-SOURCE VOLTAGE(V) 0.6 60 40 20 VGS=0V 1 3 4 2 1 VGS,GATETOSOURCEVOLTAGE VGS, GATE TO SOURCE VOLTAGE(V) MEN09N03BJ3 5 25°C 0.1 -55°C 0.01 0.001 0.0001 0 TA = 125°C 10 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE VOLTAGE(V) VSD ,BODY DIODEFORWARD FORWARD VOLTAG E( V ) CYStek Product Specification 1.4 Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 4/7 CYStech Electronics Corp. Characteristic Curves(Cont.) GATE CHARGE CHARACTERISTICS CAPACITANCE CHARACTERISTICS CA PA CI T A N CE CH A RA CT ERIST ICS G A T E C H A R G E C H A R A C T E R IS T IC S ID = 2 5 A 10 4 10 3 V 8 DS C-CAPACITANCE (pF) 10 =5V CAPACITANCE (pF) VGS ,GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE(V) 12 10V 15V 6 4 Ci ss Co ss 10 Cr ss 2 2 f = 1 M Hz V G S= 0 V 0 0 Q g 100 15 20 25 30 SINGLE PULSE MAXIMUM POWER DISSIPATION SINGLEPULS EMAXIMUM POWERDIS SIPATION 100 μ s Rds(o 10 3000 10μ s t imi n) L 5 V D S - D RA IN - t o - SO U RCE V LT A G E ( V ) MAXIMUM SAFEOPE RATING AREA MAXIMUM SAFE OPERATING AREA 300 200 SINGLEPULSE RθJC= 2.5°C/W TC = 25°C 2500 1ms 50 10 POWER(W) POWER( W ) 10m s 100m DC s 20 5 D ID, DRAINI CURRENT(A) ,DRAIN CURRENT( A ) 0 30 10 20 ,G A T E C H A R G E (n C ) 2 VGS=10V SINGLE VGS = 10VPULSE SING LEPULSE =25℃/W RθJC RθJC= 2.5°C/W TCT=25℃ c = 25°C 1 2000 1500 1000 500 0.5 0 0.5 1 2 3 5 30 20 10 50 0.01 0.1 10 1 SINGLEPULSETIME(SEC) 100 1000 SINGLE PULSE TIME(SEC) VDS ,DRAIN- SOURCEVOLTAGE VDS, DRAIN- SOURCE VOLTAGE(V) TRANSIENT THERMAL RESISTANCE Transi ent Therma l Response Curve Transient Thermal Resistance r(t), Normalized Effective Transient Thermal Resistance d Effective r(t),Normalize 1 0.5 Duty Cycle = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 Notes: 0.05 DM 0.03 0.02 0.02 0.01 0.01 -2 10 t1 1.Duty Cycle,D = t2 2.R =2.5°C/W θJC 3.TJ - TC = P* R (t) Single Pulse θJC 4.R (t)=r(t) * R θJC -1 10 1 10 θJC 100 1000 t1, Time(sec) t 1 ,Time (sec) MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MEN09N03BJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 7/7 TO-252 Dimension C A D B Device Name Date code G F L Marking: 09N03 □□□□ 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; tin plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MEN09N03BJ3 CYStek Product Specification