SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V ID drain current - - -2.3 A - 120 170 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -2 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G S 1 2 017aaa257 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number BSH205G2 Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] BSH205G2 %KB [1] BSH205G2 Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -8 8 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -2.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.2 A - -8 A [2] - 480 mW [1] - 890 mW - 6250 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.8 A Source-drain diode IS source current [1] [2] Tsp = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature BSH205G2 Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 April 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-016178 -10 tp = 10 µs Limit RDSon = VDS/ID ID (A) tp = 100 µs tp = 1 ms -1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] BSH205G2 Product data sheet Min Typ Max Unit [1] - 230 260 K/W [2] - 120 140 K/W [2] - 85 100 K/W - 15 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-011994 103 Zth(j-a) (K/W) duty cycle = 1 102 0.50 0.25 0.10 10 0.75 0.33 0.20 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-011995 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.75 0.25 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 120 170 mΩ VGS = -4.5 V; ID = -2 A; Tj = 150 °C - 168 238 mΩ VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C - 150 230 mΩ VGS = -1.8 V; ID = -0.6 A; Tj = 25 °C - 200 320 mΩ VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C - 260 600 mΩ VDS = -10 V; ID = -2 A; Tj = 25 °C - 4.5 - S total gate charge VDS = -10 V; ID = -2 A; VGS = -4.5 V; - 3.7 6.5 nC QGS gate-source charge Tj = 25 °C - 0.6 - nC QGD gate-drain charge - 0.8 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 418 - pF Coss output capacitance Tj = 25 °C - 45 - pF Crss reverse transfer capacitance - 34 - pF td(on) turn-on delay time VDS = -10 V; ID = -2 A; VGS = -4.5 V; - 5 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 14 - ns td(off) turn-off delay time - 43 - ns tf fall time - 16 - ns - -0.8 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage BSH205G2 Product data sheet IS = -0.8 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-016179 -8 VGS = -4.5 V ID (A) -3 V -2.5 V -6 aaa-016180 -10-3 ID (A) -2.2 V -10-4 -4 -1.8 V min -10-5 -2 typ max -1.5 V -1.2 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) -10-6 -4 0 -0.5 -1.0 -1.5 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-016181 0.8 -1.2 V -1.5 V RDSon -1.8 V aaa-016182 0.8 -2.2 V RDSon (Ω) -2.5 V 0.6 0.6 0.4 0.4 Tj = 150 °C -3 V 0.2 0.2 VGS = -4.5 V 0 0 -2 -4 -6 ID (A) Tj = 25 °C 0 -8 Tj = 25 °C Fig. 8. VGS (V) Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -2 A Drain-source on-state resistance as a function of drain current; typical values BSH205G2 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-016183 -8 Tj = 150 °C ID (A) -6 a 1.5 Tj = 25 °C -4 1.0 -2 0.5 0 0 -1 -2 aaa-016184 2.0 -3 0 -60 -4 VGS (V) VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-016186 103 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-016185 -1.2 0 Ciss C (pF) -0.8 max 102 typ -0.4 Coss Crss min 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature BSH205G2 -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-016187 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 003aaa508 0 0 1 2 3 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 4 ID = -2 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-016188 -4 IS (A) -3 Tj = 150 °C -2 Tj = 25 °C -1 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 16 BSH205G2 NXP Semiconductors 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSH205G2 v. 2 20150429 Product data sheet - BSH205G2 v.1 Modifications: • BSH205G2 v.1 20141215 Product data sheet - - BSH205G2 Product data sheet AEC-Q101 qualified All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 April 2015 BSH205G2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 16