MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Features
Rev. V3
MAGX-001214-650L00
GaN on SiC Depletion-Mode Transistor
Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
+50 V Typical Operation
MTTF = 600 Years (TJ < 200 °C)
Applications
L-Band pulsed radar.
Description
The MAGX-001214-650L0x is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation
under more extreme mismatch load conditions
compared with older semiconductor technologies.
Ordering Information
Part Number
Description
MAGX-001214-650L00
GaN Transistor
MAGX-L21214-650L00
1200-1400 MHz
Evaluation Board
Typical RF Performance Under Standard Operating Conditions, POUT = 650 W (Peak)
Freq.
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
VSWR-S
(3:1)
1200
8.7
18.8
21.3
61.0
-13.9
0.2
717
S
1250
8.5
18.9
22.0
58.9
-13.8
0.3
726
S
1300
8.0
19.1
22.4
57.8
-13.5
0.3
724
S
1350
7.0
19.7
21.8
59.7
-15.8
0.3
723
S
1400
7.0
19.7
21.1
61.4
-15.0
0.2
697
S
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Electrical Specifications: Freq. = 1200 - 1400 MHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
PIN
-
7.5
10.3
W
GP
18
19.5
-
dB
ηD
55
60
-
%
Droop
-
0.3
0.6
dB
VSWR-S
-
2:1
-
-
VSWR-T
-
3:1
-
-
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 175 V
IDS
-
1.7
33
mA
Gate Threshold Voltage
VDS = 5 V, ID = 90 mA
VGS (TH)
-5
-2.9
-2
V
Forward Transconductance
VDS = 5 V, ID = 21 mA
GM
16.2
21.7
-
S
CISS
N/A
N/A
N/A
pF
COSS
-
55
-
pF
CRSS
-
5.5
-
pF
RF Functional Tests
Peak Input Power
Power Gain
Drain Efficiency
Pulse Droop
Load Mismatch Stability
VDD = 50 V, IDQ = 500 mA
Pulse Width = 300 µs,
Duty Cycle = 10%
POUT = 650 W Peak (65 W avg.)
Load Mismatch Tolerance
Electrical Characteristics: TA = 25°C
Parameter
DC Characteristics
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input matched
VDS = 50 V, VGS = -8 V,
Freq. = 1 MHz
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Absolute Maximum Ratings1,2,3
Parameter
Limit
Drain Voltage (VDD)
+65 V
Gate Voltage (VGG)
-8 to 0 V
Drain Current (IDD)
27 A
4
Input Power (PIN)
Operating Junction Temperature
PIN (nominal) + 3 dB
5
250ºC
Peak Pulsed Power Dissipation at 85ºC
700 W
Operating Temperature Range
-40 to +85ºC
Storage Temperature Range
-65 to +150ºC
ESD Min. - Charged Device Model (CDM)
1300 V
ESD Min. - Human Body Model (HBM)
4000 V
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. MACOM does not recommend sustained operation near these survivability limits.
3. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V.
4. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 650 W.
5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and
should be kept as low as possible to maximize lifetime.
MTTF = 5.3 x 106 hours (TJ < 200°C)
MTTF = 6.8 x 104 hours (TJ < 250°C)
Thermal Characteristics
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance
TC = 70ºC, VDD = 50 V, IDQ = 500 mA, POUT = 650 W
Pulse Width = 300 µs, Duty Cycle = 10%
ΘJC
0.25
°C/W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
Correct Device Sequencing
Test Fixture Impedances
F (MHz)
ZIF (Ω)
ZOF (Ω)
1200
0.8 - j0.9
1.4 + j0.2
1250
0.8 - j0.7
1.4 + j0.2
1300
0.7 - j0.6
1.4 + j0.1
1350
0.7 - j0.4
1.2 + j0.1
1400
0.7 - j0.2
1.1 + j0.2
Zif
INPUT
NETWORK
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
OUTPUT
NETWORK
Zof
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
RF Power Transfer Curve (Output Power vs. Input Power)
850
Output Power (W)
750
650
550
450
1.20 GHz
350
1.30 GHz
250
1.40 GHz
150
50
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Input Power (W)
RF Power Transfer Curve (Drain Efficiency vs. Output Power)
70
Drain Efficiency (%)
60
50
40
1.20 GHz
1.30 GHz
30
1.40 GHz
20
50
150
250
350
450
550
650
750
Output Power (W)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
850
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Outline Drawing MAGX-001214-650L00
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support