Hittite HMC609LC4 Gaas phemt mmic low noise amplifier, 2 - 4 ghz Datasheet

HMC609LC4
v02.0508
LOW NOISE AMPLIFIERS - SMT
8
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Typical Applications
Features
The HMC609LC4 is ideal for:
Excellent Gain Flatness: ±0.4 dB
• Fixed Microwave
High Gain: 20 dB
• Test & Measurement Equipment
Low Noise Figure: 3.5 dB
• Radar & Sensors
Output IP3: +36.5 dBm
• Military & Space
50 Ohm Matched & DC Blocked RF I/Os
RoHS Compliant 4x4 mm SMT package
Functional Diagram
General Description
The HMC609LC4 is a GaAs PHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC609LC4 features extremely flat performance characteristics including 20 dB of small
signal gain, 3.5 dB of noise figure and output IP3 of
+36.5 dBm across the operating band. This 50 Ohm
matched amplifier does not require any external
matching components. The HMC609LC4 is compatible
with high volume surface mount manufacturing
techniques, and the RF I/Os are DC blocked for further ease of integration.
Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
2-4
17
Gain Variation Over Temperature
Noise Figure
GHz
20
dB
0.015
0.02
dB/ °C
3.5
5.5
dB
Input Return Loss
17
dB
Output Return Loss
15
dB
21.5
dBm
23
dBm
Output Power for 1 dB
Compression (P1dB)
18.5
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
36.5
Supply Current (Idd1 + Idd2)
170
dBm
220
[1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA
8 - 230
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
25
20
20
15
15
10
S21
S11
S22
0
-5
-10
-15
10
S21
S11
S22
5
0
-5
-10
-15
-20
-20
-25
-25
-30
-30
1
2
3
4
5
6
7
8
1
9
2
3
5
22
22
21
21
20
20
19
18
+25C
+85C
-40C
7
8
9
3.5
3.75
4
19
18
+25C
+85C
-40C
17
16
16
15
15
2
2.25
2.5
2.75
3
3.25
3.5
3.75
2
4
2.25
2.5
2.75
3
3.25
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
Input Return Loss vs. Temperature [2]
0
0
-5
+25C
+85C
-40C
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
6
Gain vs. Temperature [2]
GAIN (dB)
GAIN (dB)
Gain vs. Temperature [1]
17
4
FREQUENCY (GHz)
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - SMT
25
5
8
Broadband Gain & Return Loss [2]
RESPONSE (dBm)
RESPONSE (dB)
Broadband Gain & Return Loss [1]
-20
-30
+25C
+85C
-40C
-10
-15
-20
-25
-30
-35
-40
-40
2
2.25
2.5
2.75
3
3.25
FREQUENCY (GHz)
[1] Vdd = 6V
3.5
3.75
4
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
FREQUENCY (GHz)
[2] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 231
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
8
Output Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [2]
0
-5
+25C
+85C
-40C
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-15
-20
-10
-15
-20
+25C
+85C
-40C
-25
-25
-30
-30
2
2.25
2.5
2.75
3
3.25
3.5
3.75
2
4
2.25
2.5
Psat vs. Temperature [1]
25
24
24
23
23
Psat (dBm)
26
25
22
21
20
3.75
4
3.5
3.7
4
3.5
3.7
4
+25C
+85C
-40C
22
21
20
17
16
16
2
2.25
2.5
2.75
3
3.25
3.5
3.75
2
4
2.2
2.5
P1dB vs. Temperature [1]
25
24
24
23
23
P1dB (dBm)
26
25
22
21
20
3.2
+25C
+85C
-40C
22
21
20
19
+25C
+85C
-40C
18
3
P1dB vs. Temperature [2]
26
19
2.7
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
3.5
18
17
18
17
17
16
16
2
2.25
2.5
2.75
3
3.25
FREQUENCY (GHz)
[1] Vdd = 6V
8 - 232
3.25
19
+25C
+85C
-40C
18
3
Psat vs. Temperature [2]
26
19
2.75
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat (dBm)
LOW NOISE AMPLIFIERS - SMT
0
3.5
3.75
4
2
2.2
2.5
2.7
3
3.2
FREQUENCY (GHz)
[2] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Output IP3 vs. Temperature [1]
8
Output IP3 vs. Temperature [2]
40
39
38
38
OIP3 (dBm)
IP3 (dBm)
37
36
34
36
35
34
+25C
+85C
-40C
33
+25C
+85C
-40C
32
32
31
30
30
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
2
2.25
2.5
FREQUENCY (GHz)
2.75
3
3.25
3.5
3.75
4
3.75
4
FREQUENCY (GHz)
Noise Figure vs. Temperature [1]
Noise Figure vs. Temperature [2]
10
10
9
+25C
+85C
-40C
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
8
6
4
2
+25C
+85C
-40C
7
6
5
4
LOW NOISE AMPLIFIERS - SMT
40
3
2
1
0
0
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
2
2.25
2.5
FREQUENCY (GHz)
0
0
-10
-10
+25C
+85C
-40C
ISOLATION (dB)
ISOLATION (dB)
3
3.25
3.5
Reverse Isolation vs. Temperature [2]
Reverse Isolation vs. Temperature [1]
-20
2.75
FREQUENCY (GHz)
-30
-40
-20
+25C
+85C
-40C
-30
-40
-50
-50
-60
-60
2
2.25
2.5
2.75
3
3.25
FREQUENCY (GHz)
[1] Vdd = 6V
3.5
3.75
4
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
FREQUENCY (GHz)
[2] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 233
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
8
Power Compression @ 3 GHz
8 - 234
Pout (dBm), GAIN (dB), PAE (%)
LOW NOISE AMPLIFIERS - SMT
25
20
15
10
Pout
Gain
PAE
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
7 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +6.0 Vdc)
+15 dBm
+5.5
160
Channel Temperature
175 °C
+6.0
170
+6.5
180
Continuous Pdiss (T = 85 °C)
(derate 16.7 mW/°C above 85 °C)
1.1 W
Thermal Resistance
(channel to ground paddle)
60 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
LOW NOISE AMPLIFIERS - SMT
8
Outline Drawing
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 235
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
LOW NOISE AMPLIFIERS - SMT
8
Pin Descriptions
Function
Description
1, 5 - 8, 10 - 14,
18 - 20, 22, 24
Pin Number
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
2, 4, 15, 17
GND
Package bottom must also be
connected to RF/DC ground
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
9
Vgg
Gate supply voltage for the amplifier.
(External bypass capacitors are required.)
16
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
21, 23
Vdd1, Vdd2
Power Supply Voltage for the amplifier.
(External bypass capacitors are required.)
Interface Schematic
Application Circuit
8 - 236
Component
Value
C1 - C3
100 pF
C4 - C6
1,000 pF
C7 - C9
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC609LC4
v02.0508
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
8
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 117510 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J7
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C9
2.2 μF Capacitor, Tantalum
U1
HMC609LC4 Amplifier
PCB [2]
117515 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 237
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