GBU10D thru GBU10M Glass Passivated Single Phase Bridge Rectifiers Reverse Voltage 200 to 1000V Forward Current 10 Amp Features y y y y y Circuit Glass passivated die construction Ideal for printed circuit boards Plastic material used carries UL flammability recognition 94V-0 High surge current capability High temperature soldering guaranteed: 265℃ /10 seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg) tension Mechanical Data Case: Molded plastic case Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Marked on Body Mounting Position: Any - + Module Type TYPE GBU10D GBU10G GBU10J GBU10K GBU10M VRRM VRSM 200V 400V 600V 800V 1000V 300V 500V 700V 900V 1100V Maximum Ratings and Thermal Characteristics (TA = 25℃ unless otherwise noted) Symbol Conditions Values Maximum average forward output rectified current Tc =100℃ 10(1) IF(AV) Peak forward surge current single half sine-wave superimposed on rated load (JEDEC Method) IFSM i2t Rating for fusing (t<8.3ms) a.c.50HZ;r.m.s.;1min Visol Operating Junction and storage temperature range Approximate Weight A 166 A2s 2500 V Maximum Instantaneous Forward Voltage per leg Maximum DC reverse current at rated DC blocking voltage per leg ℃/W -55 to +150 Electrical Characteristics (TA = 25℃ unless otherwise noted) Symbol Conditions Notes: 200 22 4.2 (3) Maximum thermal resistance per leg Tj, TSTG Weight IR A (2) RθJA RθJC VF Units IFM =10A TA = 25℃ TA = 125℃ 4.0 ℃ g Values Units 1.1 V 5.0 500 µA (1) Heat sink, TC mouting-4x4x0.15cm thick copper plate (2) Junction to ambient without heatsink (3) Junction to case with heatsink (4) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw Document Number: GBU10D thru GBU10M Jun.25, 2010 www.smsemi.com 1 GBU10D thru GBU10M Performance Curves IF, INSTANTANEOUS FORWARD CURRENT (A) I (AV), AVERAGE FORWARD CURRENT (A) 10 8 6 4 2 0 0 50 100 TA, AMBIENT TEMPERATURE (ºC) Fig.1 Forward Current Derating Curve 10 1.0 Tj=25ºC Pulse Width=300μs 0.1 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig.2 Typical Forward Characteristics, per element 1000 Tj=125ºC 8.3ms Single Half-Sine-Wave 250 Cj, CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 300 150 100 200 150 100 100 50 Tj=25ºC f =1MHZ 10 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig.4 Typical Junction Capacitance per element 10 100 NUMBER OF CYCLES AT 60Hz Fig.3 Max Non-Repetitive Forward Surge Current IR, INSTANTANEOUS REVERSE CURRENT (μA) 1 10 Tj=125ºC 1.0 0.1 Tj=25ºC 0.01 0 20 40 60 80 100 120 140 RATED PERCENT OF PEAK REVERSE VOLTAGE (%) Fig.5 Typical Reverse Characteristics Document Number:GBU10D thru GBU10M Jun.25, 2010 www.smsemi.com 2 GBU10D thru GBU10M Package Outline Information CASE: GBU 0.880(22.3) 0.860(21.8) 0.125(3.2)×45° Chamfer 0.310(7.9) 0.290(7.4) 0.140(3.56) 0.130(3.30) 0.160(4.1) 0.140(3.5) 0.740(18.8) 0.720(18.3) 0.085(2.16) 0.065(1.65) + 0.080(2.03) 0.060(1.52) ~ ~ 0.075 (1.9)R - 0.710(18.0) 0.690(17.5) 0.100(2.54) 0.085(2.16) 0.085(2.16) 0.075(1.90) 0.026(0.67) 0.020(0.52) 0.080(2.03) 0.065(1.65) 0.050(1.27) 0.040(1.02) 0.190(4.83) 0.210(5.33) Dimensions in inches (mm) Document Number: GBU10D thru GBU10M Jun.25, 2010 www.smsemi.com 3