AP13N50R-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
500V
RDS(ON)
0.52Ω
ID
G
14A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
TO-262(R)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
14
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
9
A
50
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
156
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.8
℃/W
62
℃/W
1
201006281
AP13N50R-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
500
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7A
-
-
0.52
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
6.3
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=14A
-
48
77
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=200V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
18
-
nC
VDD=200V
-
22
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7A
-
49
-
ns
td(off)
Turn-off Delay Time
RG=50Ω
-
327
-
ns
tf
Fall Time
VGS=10V
-
115
-
ns
Ciss
Input Capacitance
VGS=0V
-
1980 3170
pF
Coss
Output Capacitance
VDS=30V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
IS=14A, VGS=0V
-
-
1.3
V
IS=14A, VGS=0V
-
440
-
ns
dI/dt=100A/µs
-
6.9
-
uC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP13N50R-HF
20
30
o
10V
7.0V
5.0V
4.5V
o
T C =150 C
10 V
7.0 V
5.0V
16
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
20
4.5V
10
12
V G = 4.0V
8
V G = 4.0 V
4
0
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
24.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12.0
16.0
20.0
24.0
28.0
Fig 2. Typical Output Characteristics
2.8
1.2
I D =7A
V G =10V
Normalized RDS(ON)
2.4
Normalized BVDSS (V)
8.0
V DS , Drain-to-Source Voltage (V)
1.1
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.5
8
1.3
T j =150 o C
Normalized VGS(th) (V)
10
T j =25 o C
IS(A)
6
4
1.1
0.9
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP13N50R-HF
C iss
10
I D =14A
V DS =200V
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
12
6
C oss
100
4
10
C rss
2
1
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4