AD ADN2882 4.25 gbps 3.3v low noise transimpedance amplifier Datasheet

4.25 Gbps 3.3V Low Noise
Transimpedance Amplifier
ADN2882
Preliminary Technical Data
FEATURES
PRODUCT DESCRIPTION
Technology: high performance SiGe
Bandwidth: 3.2 GHz minimum
Input noise current density: 10 pA√Hz
Optical sensitivity: −22 dBm
Differential transimpedance: 4000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω side
RSSI voltage and current ratio: 0.8V/mA
Low-freq cutoff: 15 kHz
On-chip PD filter: RF = 200 Ω CF = 20 pF
Die size: 0.7 mm × 1.2 mm
The ADN2882 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small form factor 4.25 Gbps metro-access, Ethernet PIN/APDTIA modules and 1×/2×/4× Fibre channel receiver applications
and meets OC48 SR/IR sensitivity requirements. The ADN2882
is a single-chip solution for detecting photodiode current with a
differential output voltage. The ADN2882 features low input
referred noise current of 600 nA enabling −22 dBm sensitivity;
3.2 GHz minimum bandwidth enables up to 4.25 Gbps
operation; +3.25 dBm nominal operation at 10dB extinction
ratio. RSSI output signal proportional to average input current
is available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or TO56 header, the ADN2882 integrates the photodiode filter
network on chip and features 15 kHz low frequency cutoff
without any external components. The ADN2882 chip area is
less than 1 mm2, operates with a 3.3 V power supply and is
available in die form.
APPLICATIONS
4.25 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders
FUNCTIONAL BLOCK DIAGRAM
3.3V
VCC_FI LT ER
VCC
200Ω
50Ω
1100Ω
FI LT ER
50Ω
OU T
OU T B
IN
20pF
0.85V
5mA
RSSI
GN D
GN D
CAP
Figure 1. ADN2882 Block Diagram
Rev. PrD
November
04
2004
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However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADN2882
Preliminary Technical Data
TABLE OF CONTENTS
Electrical Specifications ................................................................... 3
Pad Layout ..........................................................................................6
Absolute Maximum Ratings............................................................ 4
Pad Coordinates ............................................................................6
ESD Caution.................................................................................. 4
Die Information.............................................................................6
Pad Description ................................................................................ 5
Assembly Recommendations...........................................................7
REVISION HISTORY
07/04—Revision PrB July 27 2004
09/04 - Revision PrC Sept 30 2004: spec changes
11/04 – Revision PrD: RSSI added in
Rev. PrD Nov. 04 2004 | Page 2 of 10
Preliminary Technical Data
ADN2882
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
DYNAMIC PERFORMANCE
Bandwidth (BW)2
Total Input RMS Noise (IRMS)2
Small Signal Transimpedance (ZT)
Low Frequency Cutoff
Output Return Loss
Input Overload Current3
Maximum Output Swing
Output Data Transition Time
PSRR
Group Delay Variation
Transimpedance Ripple
Total Jitter
Deterministic Jitter
Linear Output Range
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common Mode Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
Conditions1
Min
Typ
−3 dB
DC to 4.0 GHz
100MHz
IIN = 10µA
IIN = 500µA
DC to 4.25GHz, differential
Pavg
pk-pk diff, IIN,PK- PK = 2.0 mA
20% to 80% rise/fall time IIN,PK- PK = 2.5 mA
<10 MHz
50 MHz to 1.0 GHz
50 MHz to 1.0 GHz
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
Pk-pk, < 1dB compression
3.3
3.8
520
3800
15
TBD
IIN,AVE = 0
2800
TBD
180
50
DC terminated to VCC
Single-ended
RF
CF
IIN, AVE = 0 uA to 1 mA
IIN, AVE = 0 uA
1
Min/Max VCC = +3.3 V ± 0.3 V, Ta = −40°C to +95°C; Typ VCC = 3.3 V, Ta = +25C.
Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3
10–10 BER, 10 dB ER,
2
Rev. PrD Nov. 04 2004 | Page 3 of 10
−20
3.25
250
40
−40
TBD
TBD
TBD
TBD
2
4
TBD
75
0.85
Vcc − 0.12
50
200
20
0.8
TBD
Max
TBD
4800
−12
350
TBD
TBD
120
Unit
GHz
nA
V/A
kHz
kHz
dB
dBm
mV
ps
dB
ps
dB
ps
ps
ps
Ps
mV
mW
V
V
Ω
Ω
pF
V/mA
mV
ADN2882
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage (VCC to GND)
Maximum Input Current
Storage Temperature Range
Operating Ambient Temperature Range
Maximum Junction Temperature
Die Attach Temperature (<60 seconds)
Rating
5V
10 mA
−65°C to +125°C
−40°C to +95°C
165°C
450°C
Stresses above those listed under Absolute Maximum Rating
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. PrD Nov. 04 2004 | Page 4 of 10
Preliminary Technical Data
ADN2882
PAD DESCRIPTION
B
FI LT ER
RSSI
Table 3.
Pad No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Pad Name
GND
IN
TEST
FILTER
FILTER
GND
RSSI
CAP
GND
GND
OUTB
OUT
GND
GND
VCCFILTER
VCC
VCC
Function
Ground (input return).
Current input. Bond directly to PD anode.
Test probe Pad. Leave floating.
Filter Output
Filter Output
Ground.
Voltage Output (provides average input current reading)
Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz.
Ground.
Ground (output return).
Negative Output. Drives 50 Ω termination (ac or dc termination).
Positive Output. Drives 50 Ω termination (ac or dc termination).
Ground (output return).
Ground.
Filter Supply. Connect to VCC to enable on-chip 200 Ω, 20 pf Filter.
3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
Rev. PrD Nov. 04 2004 | Page 5 of 10
ADN2882
Preliminary Technical Data
PAD LAYOUT
B
FI LT ER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
DIE INFORMATION
PAD
GND
IN
TEST
FILTER
FILTER
GND
RSSI
CAP
GND
GND
OUTB
OUT
GND
GND
VCCFILTER
VCC
VCC
X (um)
−500
−500
−500
−500
−500
−350
−200
−50
130
500
350
350
500
130
−50
−200
−350
Y (um)
260
130
10
−120
−260
−260
−260
−260
−260
−260
−60
60
260
260
260
260
260
Die Size
0.7mm × 1.2mm
(edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm × 0.075 mm
(pads 1-8, 9, 10, 13, 15, 16, 17)
0.144mm × 0.075mm
(pads 9, 11, 12, 14)
Passivation Composition
5000Å Si3N4 (top)
+5000 Å SiO2 (bot)
Pad Composition
Al/1%Cu
Backside Contact
Rev. PrD Nov. 04 2004 | Page 6 of 10
Preliminary Technical Data
ADN2882
ASSEMBLY RECOMMENDATIONS
VPD
VCC
560pF
200pF
OUT
OUTB
Figure 3. 5-Pin TO-46 with External Photodiode Supply VPD
1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode
1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier
1× 200 pF RF single-layer capacitor
1× 560pF RF Single-layer capacitor
Notes
Minimize all GND bond wire lengths
Minimize IN, OUT and OUTB bond wire lengths
Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 7 of 10
ADN2882
Preliminary Technical Data
ASSEMBLY RECOMMENDATIONS
VCC
200pF
OUTB
Ceramic
Standoff
OUT
Figure 4. Recommended Layout for 4 pin TO-46
1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode
1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier
1× 200 pF RF single-layer capacitor
1× ceramic standoff
Notes
Minimize all GND bond wire lengths
Minimize IN, OUT and OUTB bond wire lengths
Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 8 of 10
Preliminary Technical Data
ADN2882
TYPICAL SIGNAL PERFORMANCE
Rev. PrD Nov. 04 2004 | Page 9 of 10
ADN2882
Preliminary Technical Data
ORDERING GUIDE
ADN2882XCHIPS-WP
Temperature
o
o
-40 C to 95 C
Package Description
Package Option
NA
Tested Die
PR04946-0-11/04(PrD)
Model
Rev. PrD Nov. 04 2004 | Page 10 of 10
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