4.25 Gbps 3.3V Low Noise Transimpedance Amplifier ADN2882 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pA√Hz Optical sensitivity: −22 dBm Differential transimpedance: 4000 V/A Power dissipation: 75 mW Differential output swing: 250 mV p-p Input current overload: +3.25 dBm Output resistance: 50 Ω side RSSI voltage and current ratio: 0.8V/mA Low-freq cutoff: 15 kHz On-chip PD filter: RF = 200 Ω CF = 20 pF Die size: 0.7 mm × 1.2 mm The ADN2882 is a compact, high performance 3.3 V power supply SiGe transimpedance amplifier (TIA) optimized for small form factor 4.25 Gbps metro-access, Ethernet PIN/APDTIA modules and 1×/2×/4× Fibre channel receiver applications and meets OC48 SR/IR sensitivity requirements. The ADN2882 is a single-chip solution for detecting photodiode current with a differential output voltage. The ADN2882 features low input referred noise current of 600 nA enabling −22 dBm sensitivity; 3.2 GHz minimum bandwidth enables up to 4.25 Gbps operation; +3.25 dBm nominal operation at 10dB extinction ratio. RSSI output signal proportional to average input current is available for monitoring and alarm generation. To facilitate assembly in small form factor packages such as a TO-46 or TO56 header, the ADN2882 integrates the photodiode filter network on chip and features 15 kHz low frequency cutoff without any external components. The ADN2882 chip area is less than 1 mm2, operates with a 3.3 V power supply and is available in die form. APPLICATIONS 4.25 Gbps optical modules SFF-8472 compliant receivers PIN/APD-TIA receive optical subassembly SONET/GbE/FC optical receivers, transceivers, transponders FUNCTIONAL BLOCK DIAGRAM 3.3V VCC_FI LT ER VCC 200Ω 50Ω 1100Ω FI LT ER 50Ω OU T OU T B IN 20pF 0.85V 5mA RSSI GN D GN D CAP Figure 1. ADN2882 Block Diagram Rev. PrD November 04 2004 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved. ADN2882 Preliminary Technical Data TABLE OF CONTENTS Electrical Specifications ................................................................... 3 Pad Layout ..........................................................................................6 Absolute Maximum Ratings............................................................ 4 Pad Coordinates ............................................................................6 ESD Caution.................................................................................. 4 Die Information.............................................................................6 Pad Description ................................................................................ 5 Assembly Recommendations...........................................................7 REVISION HISTORY 07/04—Revision PrB July 27 2004 09/04 - Revision PrC Sept 30 2004: spec changes 11/04 – Revision PrD: RSSI added in Rev. PrD Nov. 04 2004 | Page 2 of 10 Preliminary Technical Data ADN2882 ELECTRICAL SPECIFICATIONS Table 1. Parameter DYNAMIC PERFORMANCE Bandwidth (BW)2 Total Input RMS Noise (IRMS)2 Small Signal Transimpedance (ZT) Low Frequency Cutoff Output Return Loss Input Overload Current3 Maximum Output Swing Output Data Transition Time PSRR Group Delay Variation Transimpedance Ripple Total Jitter Deterministic Jitter Linear Output Range DC PERFORMANCE Power Dissipation Input Voltage Output Common Mode Voltage Output Impedance PD FILTER Resistance PD FILTER Capacitance RSSI Sensitivity RSSI Offset Conditions1 Min Typ −3 dB DC to 4.0 GHz 100MHz IIN = 10µA IIN = 500µA DC to 4.25GHz, differential Pavg pk-pk diff, IIN,PK- PK = 2.0 mA 20% to 80% rise/fall time IIN,PK- PK = 2.5 mA <10 MHz 50 MHz to 1.0 GHz 50 MHz to 1.0 GHz 10 µA < IIN,PK- PK ≤ 100 µA 100 µA < IIN,PK- PK ≤ 2.0 µA 10 µA < IIN,PK- PK ≤ 100 µA 100 µA < IIN,PK- PK ≤ 2.0 µA Pk-pk, < 1dB compression 3.3 3.8 520 3800 15 TBD IIN,AVE = 0 2800 TBD 180 50 DC terminated to VCC Single-ended RF CF IIN, AVE = 0 uA to 1 mA IIN, AVE = 0 uA 1 Min/Max VCC = +3.3 V ± 0.3 V, Ta = −40°C to +95°C; Typ VCC = 3.3 V, Ta = +25C. Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled). 3 10–10 BER, 10 dB ER, 2 Rev. PrD Nov. 04 2004 | Page 3 of 10 −20 3.25 250 40 −40 TBD TBD TBD TBD 2 4 TBD 75 0.85 Vcc − 0.12 50 200 20 0.8 TBD Max TBD 4800 −12 350 TBD TBD 120 Unit GHz nA V/A kHz kHz dB dBm mV ps dB ps dB ps ps ps Ps mV mW V V Ω Ω pF V/mA mV ADN2882 Preliminary Technical Data ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Supply Voltage (VCC to GND) Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<60 seconds) Rating 5V 10 mA −65°C to +125°C −40°C to +95°C 165°C 450°C Stresses above those listed under Absolute Maximum Rating may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. PrD Nov. 04 2004 | Page 4 of 10 Preliminary Technical Data ADN2882 PAD DESCRIPTION B FI LT ER RSSI Table 3. Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Pad Name GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC Function Ground (input return). Current input. Bond directly to PD anode. Test probe Pad. Leave floating. Filter Output Filter Output Ground. Voltage Output (provides average input current reading) Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz. Ground. Ground (output return). Negative Output. Drives 50 Ω termination (ac or dc termination). Positive Output. Drives 50 Ω termination (ac or dc termination). Ground (output return). Ground. Filter Supply. Connect to VCC to enable on-chip 200 Ω, 20 pf Filter. 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor. 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor. Rev. PrD Nov. 04 2004 | Page 5 of 10 ADN2882 Preliminary Technical Data PAD LAYOUT B FI LT ER RSSI Figure 2.. Pad Layout PAD COORDINATES Table 4. PAD # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DIE INFORMATION PAD GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC X (um) −500 −500 −500 −500 −500 −350 −200 −50 130 500 350 350 500 130 −50 −200 −350 Y (um) 260 130 10 −120 −260 −260 −260 −260 −260 −260 −60 60 260 260 260 260 260 Die Size 0.7mm × 1.2mm (edge-edge including 1mil scribe) Die Thickness 10mils = 0.25mm Passivation Openings 0.075 mm × 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm × 0.075mm (pads 9, 11, 12, 14) Passivation Composition 5000Å Si3N4 (top) +5000 Å SiO2 (bot) Pad Composition Al/1%Cu Backside Contact Rev. PrD Nov. 04 2004 | Page 6 of 10 Preliminary Technical Data ADN2882 ASSEMBLY RECOMMENDATIONS VPD VCC 560pF 200pF OUT OUTB Figure 3. 5-Pin TO-46 with External Photodiode Supply VPD 1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode 1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier 1× 200 pF RF single-layer capacitor 1× 560pF RF Single-layer capacitor Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires Rev. PrD Nov. 04 2004 | Page 7 of 10 ADN2882 Preliminary Technical Data ASSEMBLY RECOMMENDATIONS VCC 200pF OUTB Ceramic Standoff OUT Figure 4. Recommended Layout for 4 pin TO-46 1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode 1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier 1× 200 pF RF single-layer capacitor 1× ceramic standoff Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires Rev. PrD Nov. 04 2004 | Page 8 of 10 Preliminary Technical Data ADN2882 TYPICAL SIGNAL PERFORMANCE Rev. PrD Nov. 04 2004 | Page 9 of 10 ADN2882 Preliminary Technical Data ORDERING GUIDE ADN2882XCHIPS-WP Temperature o o -40 C to 95 C Package Description Package Option NA Tested Die PR04946-0-11/04(PrD) Model Rev. PrD Nov. 04 2004 | Page 10 of 10