JMNIC BF1108 Silicon rf switch Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R
Silicon RF switches
Product specification
Supersedes data of 1999 Aug 19
1999 Nov 18
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
FEATURES
• Specially designed for low loss RF switching
up to 1 GHz.
handbook, 2 columns
4
3
APPLICATIONS
• Various RF switching applications such as:
1
– Passive loop through for VCR tuner
2
Top view
– Transceiver switching.
MSB014
Marking code: NGp.
DESCRIPTION
Fig.1 Simplified outline (SOT143B).
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of the MOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
handbook, 2 columns
3
4
2
PINNING
PIN
Top view
DESCRIPTION
1
FET gate; diode anode
2
diode cathode
3
source; note 1
4
drain; note 1
1
MSB035
Marking code: NHp.
Fig.2 Simplified outline (SOT143R).
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
s21(on)2
s21(off)2
losses (on-state)
RDSon
VGSoff
CONDITIONS
MIN.
TYP.
−
MAX.
UNIT
−
isolation (off-state)
RS = RL = 50 Ω;
f ≤ 1 GHz
30
−
−
dB
drain-source on-resistance
VCS = 0; ID = 1 mA
−
12
20
Ω
pinch-off voltage
ID = 20 µA; VDS = 1 V
−
−3
−4
V
2
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18
2
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
FET
VDS
drain-source voltage
−
3
V
VSD
source-drain voltage
−
3
V
VDG
drain-gate voltage
−
7
V
VSG
source-gate voltage
−
7
V
ID
drain current
−
10
mA
VR
continuous reverse voltage
−
35
V
IF
continuous forward current
−
100
mA
Diode
FET and diode
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point note 1
VALUE
UNIT
250
K/W
Note
1. Soldering point of FET gate and diode anode lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
FET
V(BR)GSS
gate-source breakdown voltage
VDS = 0; IGS = 0.1 mA
7
−
−
V
VGSoff
gate-source pinch-off voltage
VDS = 1 V; ID = 20 µA
−
−3
−4
V
IDSX
drain-source leakage current
VGS = −5 V; VDS = 2 V
−
−
10
µA
IGSS
gate cut-off current
VGS = −5 V; VDS = 0
−
−
100
nA
RDSon
drain-source on-state resistance
VGS = 0; ID = 1 mA
−
12
20
Ω
VF
forward voltage
IF = 10 mA
−
−
1
V
IR
reverse current
VR = 25 V
−
−
50
nA
VR = 20 V; Tamb = 75 °C −
−
1
µA
Diode
1999 Nov 18
3
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
FET and diode
s21(on)2 losses (on-state)
s21(off)2 isolation (off-state)
VSC = VDC = 0; RS = RL = 50 Ω;
IF = 0; note 1; f ≤ 1 GHz
−
−
2
dB
VSC = VDC = 0; RS = RL = 50 Ω; IF = 0;
f = 1 GHz
−
1.3
−
dB
VSC = VDC = 0; RS = RL = 75 Ω; IF = 0;
f ≤ 1 GHz
−
−
3
dB
VSC = VDC = 5 V; RS = RL = 50 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−
−
dB
VSC = VDC = 5 V; RS = RL = 50 Ω;
IF = 1 mA; f = 1 GHz
−
38
−
dB
VSC = VDC = 5 V; RS = RL = 75 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−
−
dB
RDSon
drain-source on-resistance VCS = 0; ID = 1 mA
−
12
20
Ω
Cic
input capacitance; note 2
Coc
output capacitance; note 2
VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
−
1
−
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
−
0.65
0.9
pF
VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
−
1
−
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
−
0.65
0.9
pF
Diode
Cd
diode capacitance
f = 1 MHz; VR = 0
−
1.1
−
pF
rD
diode forward resistance
IF = 2 mA; f = 100 MHz; note 3
−
−
0.7
Ω
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
d
s
s
d
c
g, a
handbook, halfpage
MBL027
g, a
c
SOT143B
SOT143R
Fig.3 Simplified diagram.
1999 Nov 18
4
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
MGS357
0
MGS358
0
handbook, halfpage
handbook, halfpage
|s
|2
21(on)
(dB)
|s21(off)| 2
(dB)
−1
−20
−2
−40
−3
−4
−60
0
400
800
f (MHz) 1200
0
400
800
f (MHz)
1200
VSC = VDC = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current);
Measured in test circuit (Fig.6).
VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current);
Measured in test circuit (Fig.6).
Fig.4
Fig.5
Losses (on-state) as a function of
frequency; typical values.
V
handbook, full pagewidth
Isolation (off-state) as a function of
frequency; typical values.
1 nF
100 kΩ
47 kΩ
BF1108/BF1108R
50 Ω
input
1 nF
1 nF
50 Ω
output
4.7 kΩ
100 kΩ
V
1 nF
On-state: V = 0 V.
Off-state: V = 5 V.
Fig.6 Test circuit.
1999 Nov 18
5
MBL028
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1999 Nov 18
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
1999 Nov 18
REFERENCES
IEC
JEDEC
EIAJ
SC-61B
7
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
99-09-13
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 18
8
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
9
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
10
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
11
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SCA 68
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125004/03/pp12
Date of release: 1999
Nov 18
Document order number:
9397 750 06477
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