Comset BDY54 Silicon transistors, diffused mesa Datasheet

NPN BDY53 – BDY54
SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BDY53
BDY54
BDY53
BDY54
60
120
100
180
Unit
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
12
A
IB
Base Current
5
A
PTOT
Power Dissipation
60
W
-65 to +200
°C
@ TC = 25°
V
V
Junction Temperature
TJ
TS
Storage Temperature
08/11/2012
COMSET SEMICONDUCTORS
1|3
NPN BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
IEBO
ICEX
VCE(SAT)
VBE(SAT)
Ratings
Test Condition(s)
Collector-Emitter
Breakdown Voltage (*)
Emitter-Base Cutoff
Current
Collector-Emitter Cutoff
Current
IC=100 mA, IB=0
VEB=7 V
VCE=100 V
VBE=-1.5 V
TCASE=150°C
VCE=150 V
VBE=-1.5 V
TCASE=150°C
Min
Typ
Max
Unit
BDY53
BDY54
BDY53
BDY54
60
120
-
-
V
-
-
3.0
mA
BDY53
-
15
mA
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
IC=4.0 A, IB=0.4 A
BDY54
BDY53
IC=7.0 A, IB=1.4 A
BDY54
BDY53
VCE=1.5 V, IC=2 A
BDY54
VCE=4.0 V, IC=0.5 A BDY53
f=10 MHz
BDY54
BDY53
IC=5 A, IB=1 A
BDY54
IC=5 A
BDY53
IB1=1 A
BDY54
IB2=-0.5 A
Collector-Emitter saturation IC=4.0 A, IB=0.4 A
Voltage (*)
IC=7.0 A, IB=1.4 A
Base-Emitter Voltage (*)
h21E
Static Forward Current
transfer ratio (*)
fT
Transition Frequency
t d + tr
Turn-on time
t s + tf
Turn-off time
-
-
-
-
1.1
-
-
2.2
-
-
2
V
V
-
-
2.5
20
-
60
V
20
-
-
MHz
-
0.3
-
µs
-
1.8
-
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
08/11/2012
COMSET SEMICONDUCTORS
2|3
NPN BDY53 – BDY54
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
08/11/2012
[email protected]
COMSET SEMICONDUCTORS
3|3
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