AOP607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical. n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56mΩ (VGS=10V) < 105mΩ (VGS =-10V) < 77mΩ (VGS=4.5V) < 135mΩ (VGS =-4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 PDIP-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 4.7 -3.4 ID 3.8 -2.7 IDM 20 -20 2.5 2.5 TA=70°C 1.6 1.6 -55 to 150 -55 to 150 PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 37 74 28 p-ch p-ch p-ch 35 73 32 Units V V ±20 TA=25°C Continuous Drain Current A Max p-channel -60 A W °C Max Units 50 °C/W 90 °C/W 40 °C/W 50 90 40 °C/W °C/W °C/W AOP607 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 60 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.7A VGS=4.5V, ID=4A gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=4.7A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time 2.3 Units µA 100 nA 3 V A 42 TJ=125°C VSD Max V VDS=48V, VGS=0V VGS(th) IS Typ 56 75 54 77 mΩ 1 V 4 A 540 pF 11 0.78 450 mΩ S VGS=0V, VDS=30V, f=1MHz 60 VGS=0V, VDS=0V, f=1MHz 1.65 2 Ω 8.5 10.5 nC 4.3 5.5 nC pF 25 VGS=10V, VDS=30V, ID=4.7A pF 1.6 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 5.1 ns 2.6 ns 15.9 ns 2 ns VGS=10V, VDS=30V, RL=6Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4.7A, dI/dt=100A/µs 25.1 Qrr Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs 28.7 35 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10.0V 5.0V VDS=5V 15 10 125°C ID(A) ID (A) 4.5V 10 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 100 2 Normalized On-Resistance 90 80 RDS(ON) (mΩ) 3 VGS=4.5V 70 60 50 40 VGS=10V 30 20 VGS=10V 1.8 ID=4.7A 1.6 VGS=4.5V 1.4 ID=3.0A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 160 ID=4.7A 1.0E+00 140 125°C IS (A) RDS(ON) (mΩ) 1.0E-01 120 125°C 100 1.0E-02 25°C 1.0E-03 80 25°C 1.0E-04 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=30V ID= 4.7A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C TA=25°C 100µs 10ms 10µs 1ms 0.1s 1.0 10s TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 30 10.0 1s 10 DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP607 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 VGS=-10V, I D=-3.4A TJ=125°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs 105 A 130 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, I D=-3.4A mΩ S -0.77 930 VGS=0V, VDS=-30V, f=1MHz 135 mΩ -1 V -4 A 1120 pF 85 pF 35 pF 7.2 9 Ω 16 20 nC 8 10 nC nC Gate Drain Charge 3.2 nC Turn-On DelayTime 8 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr 80 2.5 Gate Source Charge Qgd trr V 10 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Coss nA -3 VDS=-5V, ID=-3.4A Forward Transconductance Crss ±100 102 gFS µA -2.1 VGS=-4.5V, I D=-2.7A VSD Units V TJ=55°C IGSS IS Max VDS=-48V, VGS=0V VGS(th) RDS(ON) Typ VGS=-10V, VDS=-30V, RL=8.8Ω, RGEN=3Ω 3.8 ns 31.5 ns 7.5 Body Diode Reverse Recovery Time IF=-3.4A, dI/dt=100A/µs 27 Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs 32 ns 35 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet≤t≤10s 10sthermal thermalresistance resistancerating. rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1:Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. ns nC AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 20 -10V VDS=-5V 25 -4.5V 15 -4.0V -ID(A) -ID (A) 20 10 -3.5V 15 10 5 VGS=-3.0V 125°C 5 25°C 0 0 1 2 3 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 130 Normalized On-Resistance 2 120 RDS(ON) (mΩ) 2 VGS=-4.5V 110 100 90 VGS=-10V 80 ID=-3.4A 1.8 VGS=-10V 1.6 VGS=-4.5V 1.4 ID=-3A 1.2 1 0.8 70 0 0 2 4 6 8 10 75 100 125 150 175 1.0E+01 180 1.0E+00 ID=-3.4A 160 1.0E-01 140 125°C 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 25 120 1.0E-03 100 25°C 1.0E-04 80 25°C 1.0E-05 60 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1500 VDS=-30V ID=-3.4A Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 500 Coss 2 Crss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 0.1s 100µs 50 60 30 Power (W) -ID (Amps) 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 30 40 TJ(Max)=150°C, TA=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000