MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. http://onsemi.com PDIP−16 P SUFFIX CASE 648 16 1 SOIC−16 D SUFFIX CASE 751B Features • Pb−Free Packages are Available* • NCV Prefix for Automotive and Other Applications Requiring Site 16 1 and Control Changes ORDERING INFORMATION 1/7 MC1413, B 2.7 k Device Pin 9 5.0 k 3.0 k Figure 1. Representative Schematic Diagram 16 1 Package Shipping† MC1413D SOIC−16 48 Units/Rail MC1413DG SOIC−16 (Pb−Free) 48 Units/Tube MC1413DR2 SOIC−16 2500 Tape & Reel MC1413DR2G SOIC−16 (Pb−Free) 2500 Tape & Reel MC1413P PDIP−16 25 Units/Rail MC1413PG PDIP−16 (Pb−Free) 25 Units/Rail MC1413BD SOIC−16 48 Units/Rail MC1413BDG SOIC−16 (Pb−Free) 48 Units/Rail 2 15 MC1413BDR2 SOIC−16 2500 Tape & Reel 3 14 MC1413BDR2G SOIC−16 (Pb−Free) 2500 Tape & Reel 4 13 MC1413BP PDIP−16 25 Units/Rail MC1413BPG 12 PDIP−16 (Pb−Free) 25 Units/Rail 5 6 11 NCV1413BDR2 SOIC−16 2500 Tape & Reel NCV1413BDR2G SOIC−16 (Pb−Free) 2500 Tape & Reel 10 7 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 9 8 (Top View) DEVICE MARKING INFORMATION Figure 2. PIN CONNECTIONS See general marking information in the device marking section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 8 1 Publication Order Number: MC1413/D MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Symbol Value Unit Output Voltage VO 50 V Input Voltage VI 30 V Collector Current − Continuous IC 500 mA Base Current − Continuous IB 25 mA Operating Ambient Temperature Range MC1413 MC1413B NCV1413B TA Storage Temperature Range Tstg −55 to +150 °C Junction Temperature TJ 150 °C Rating °C −20 to +85 −40 to +85 −40 to +125 Thermal Resistance, Junction−to−Ambient Case 648, P Suffix Case 751B, D Suffix RqJA Thermal Resistance, Junction−to−Case Case 648, P Suffix Case 751B, D Suffix RqJC Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD °C/W 67 100 °C/W 22 20 V 2000 400 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 MC1413, MC1413B, NCV1413B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Min Typ Max − − − − 100 50 − − − 1.1 0.95 0.85 1.6 1.3 1.1 − 0.93 1.35 − − − − − − 2.4 2.7 3.0 II(off) 50 100 − mA hFE 1000 − − − Input Capacitance CI − 15 30 pF Turn−On Delay Time (50% EI to 50% EO) ton − 0.25 1.0 ms Turn−Off Delay Time (50% EI to 50% EO) toff − 0.25 1.0 ms IR − − − − 50 100 mA VF − 1.5 2.0 V Characteristic Output Leakage Current (VO = 50 V, TA = +85°C) (VO = 50 V, TA = +25°C) All Types All Types Collector−Emitter Saturation Voltage (IC = 350 mA, IB = 500 mA) (IC = 200 mA, IB = 350 mA) (IC = 100 mA, IB = 250 mA) All Types All Types All Types VCE(sat) Input Current − On Condition (VI = 3.85 V) MC1413, B Input Voltage − On Condition (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) MC1413, B MC1413, B MC1413, B All Types TA = +25°C TA = +85°C Clamp Diode Forward Voltage (IF = 350 mA) NOTE: mA VI(on) DC Current Gain (VCE = 2.0 V, IC = 350 mA) Clamp Diode Leakage Current (VR = 50 V) V II(on) Input Current − Off Condition (IC = 500 mA, TA = 85°C) Unit mA ICEX V NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. http://onsemi.com 3 MC1413, MC1413B, NCV1413B TYPICAL PERFORMANCE CURVES − TA = 25°C 400 I O , OUTPUT CURRENT (mA) 300 MC1413, B 200 100 0 0 1.0 2.0 3.0 4.0 5.0 8.0 9.0 10 11 All Types 200 100 0 12 0 50 100 150 200 250 300 350 VI, INPUT VOLTAGE (V) II, INPUT CURRENT (mA) Figure 3. Output Current versus Input Voltage Figure 4. Output Current versus Input Current 800 400 2.5 700 600 I I, INPUT CURRENT (mA) PIN 13 PIN 10 1 Output Conducting at a Time 500 PIN 16 400 300 200 2.0 Maximum 1.5 Typical 1.0 0.5 All Types 100 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 VCE(sat), SATURATION VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 5. Typical Output Characteristics Figure 6. Input Characteristics − MC1413, B 1000 I C, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) 300 1 700 2 500 3 300 4 5 200 6 7 100 10 20 30 50 70 % DUTY CYCLE Figure 7. Maximum Collector Current versus Duty Cycle (and Number of Drivers in Use) http://onsemi.com 4 100 NUMBER OF DRIVERS USED I O , OUTPUT CURRENT (mA) 400 8.0 MC1413, MC1413B, NCV1413B MARKING DIAGRAMS PDIP−16 P SUFFIX CASE 648 16 16 MC1413P ULN2003A AWLYYWWG MC1413BP ULQ2003A AWLYYWWG 1 1 SOIC−16 D SUFFIX CASE 751B 16 16 MC1413DG AWLYWW 1 16 MC1413BDG AWLYWW 1 A WL YY, Y WW G NCV1413BDG AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package http://onsemi.com 5 MC1413, MC1413B, NCV1413B PACKAGE DIMENSIONS PDIP−16 P SUFFIX CASE 648−08 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. −A− 16 9 1 8 B F C L S −T− SEATING PLANE K H G D M J 16 PL 0.25 (0.010) M T A M http://onsemi.com 6 DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 MC1413, MC1413B, NCV1413B PACKAGE DIMENSIONS SOIC−16 D SUFFIX CASE 751B−05 ISSUE J −A− 16 9 1 8 −B− P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 8 PL 0.25 (0.010) M B S G R K F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S http://onsemi.com 7 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 MC1413, MC1413B, NCV1413B ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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