AO7413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7413 is Pb-free (meets ROHS & Sony 259 specifications). AO7413L is a Green Product ordering option. AO7413 and AO7413L are electrically identical. VDS (V) = -20V ID = -1.4A (VGS = -10V) RDS(ON) < 113mΩ (VGS = -10V) RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 180mΩ (VGS = -2.5V) D SC-70 (SOT-323) Top View G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V -3 0.35 W 0.22 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -1.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -1.4 TA=25°C Power Dissipation A Maximum -20 RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W AO7413 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -20 -2.5 ±1 µA VDS=0V, VGS=±12V ±10 µA -1.4 V Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 VGS=-4.5V, V DS=-5V -15 VGS=-10V, I D=-1.4A TJ=125°C VGS=-4.5V, I D=-1.3A VGS=-2.5V, I D=-1.1A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-1.4A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time -0.9 A 94 113 130 160 111 135 mΩ 180 mΩ 150 5 -0.84 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-1.4A VGS=-4.5V, VDS=-10V, RL=7.1Ω, RGEN=3Ω -0.95 V 0.6 A 620 pF 77 pF 62 pF 9.2 13 Ω 4.9 6 nC 3.5 nC 3.7 nC 11 13 ns 8 10 ns 34 41 ns 12 15 ns ns nC Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-1.4A, dI/dt=100A/µs 12.9 16 Body Diode Reverse Recovery Charge IF=-1.4A, dI/dt=100A/µs 3.9 5 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. mΩ S tD(off) Qrr µA VDS=0V, VGS=±10V On state drain current IS Units -0.5 TJ=55°C ID(ON) Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V VGS(th) RDS(ON) Typ AO7413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS -5V -9V -8V -7V -6V 20 -ID (A) 10 -10V 15 -4V VDS=-5V 8 -3.5V 6 -ID(A) 25 -3V 10 -2.5V 125°C -2V 5 4 2 25°C VGS=-1.5V 0 0 0 1 2 3 4 5 0 0.5 180 VGS=-2.5V Normalized On-Resistance RDS(ON) (mΩ) 1.5 1.6 160 140 VGS=-4.5V 120 VGS=-10V 100 80 2 2.5 3 3.5 VGS=-2.5V ID=-1.1A 1.4 VGS=-4.5V ID=-1.3A 1.2 VGS=-10V ID=-1.4A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 360 ID=-1.4A 320 1.0E+00 280 1.0E-01 240 1.0E-02 200 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 125°C 25°C 1.0E-03 1.0E-04 160 25°C 1.0E-05 120 1.0E-06 80 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 800 VDS=-10V ID=-1.4A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Coss Crss 200 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0 6.0 RDS(ON) limited 100µs 0.1s 10ms 10s 0 0.001 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 6 2 DC 0.01 0.1 8 4 1s 0.10 20 10 10µs 1ms 1.00 15 TJ(Max)=150°C TA=25°C 12 Power (W) -ID (Amps) 14 TJ(Max)=150°C TA=25°C 10.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000