Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. PINNING - SOT186 PIN BUK444-200A/B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDS ID Ptot RDS(ON) BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance -200A 200 5.3 25 0.4 -200B 200 4.7 25 0.5 V A W Ω PIN CONFIGURATION SYMBOL DESCRIPTION d case 1 gate 2 drain 3 source g case isolated s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage RGS = 20 kΩ - - 200 200 30 V V V ID ID IDM Drain current (DC) Drain current (DC) Drain current (pulse peak value) Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C - Ptot Tstg Tj Total power dissipation Storage temperature Junction Temperature Ths = 25 ˚C - - 55 - -200A 5.3 3.3 21 -200B 4.7 3.0 19 A A A 25 150 150 W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound Rth j-a April 1993 1 MIN. TYP. MAX. UNIT - - 5 K/W - 55 - K/W Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 200 - - V VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 ˚C VDS = 200 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK444-200A BUK444-200B ID = 3.5 A 2.1 - 3.0 1 0.1 10 0.35 0.4 4.0 10 1.0 100 0.4 0.5 V µA mA nA Ω Ω MIN. TYP. MAX. UNIT VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 3.5 A 3.5 5.0 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 100 50 850 160 80 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 2.9 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω - 12 45 80 40 20 70 120 60 ns ns ns ns Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT 1500 V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink - - 12 - pF MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 5.3 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 5.3 A ; VGS = 0 V - 1.1 21 1.3 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 5.3 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V - 150 0.9 - ns µC April 1993 2 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B AVALANCHE LIMITING VALUE Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 9 A ; VDD ≤ 100 V ; VGS = 10 V ; RGS = 50 Ω Normalised Power Derating PD% 120 100 with heatsink compound 110 TYP. MAX. UNIT - - 50 mJ ID / A BUK444-200A,B 100 90 ID S/ )= 80 70 MIN. 10 VD A tp = 10 us B N O ( DS R 100 us 60 1 ms 50 40 1 DC 30 10 ms 100 ms 20 10 0 0 20 40 60 80 Ths / C 100 120 0.1 140 1 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths) 120 10 with heatsink compound 110 100 VDS / V 1000 10000 Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 10 Zth / (K/W) BUKx44-lv D= 100 90 0.5 80 70 0.2 1 0.1 60 0.05 50 40 0.1 0.02 PD 30 tp D= 20 10 0 0 20 40 60 80 Ths / C 100 120 0.01 1E-07 140 T 1E-05 1E-03 t/s t 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V April 1993 0 tp T 3 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor 20 BUK444-200A/B ID / A BUK444-200A 8 10 20 VGS / V = 6 gfs / S BUK454-200A 5 15 7 4 10 3 6 2 5 0 0 2 4 6 8 10 12 VDS / V 14 16 18 5 1 4 20 0 0 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 1.5 5.5 4.5 5 6 6.5 7 2.4 2.2 2.0 1.8 1.6 1.4 VGS / V = 7.5 8 1.0 0 20 8 14 16 18 20 Normalised RDS(ON) = f(Tj) a 2 4 6 8 10 12 ID / A 14 16 18 -60 -40 -20 20 ID / A 0 20 80 100 120 140 VGS(TO) / V BUK454-200A Tj / C = 40 60 Tj / C Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V max. 4 150 25 15 typ. 3 min. 10 2 5 0 10 12 ID / A 0 0 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 20 6 1.2 1.0 0.8 0.6 0.4 0.2 10 0.5 4 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V BUK454-200A RDS(ON) / Ohm 2 1 0 0 2 4 6 8 -60 10 VGS / V -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj April 1993 -40 4 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor SUB-THRESHOLD CONDUCTION ID / A 1E-01 BUK444-200A/B IF / A 20 BUK454-200A 1E-02 15 2% 1E-03 typ 98 % 10 1E-04 Tj / C = 150 5 1E-05 25 1E-06 0 0 1 2 VGS / V 3 4 0 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 10000 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj BUK4y4-200 C / pF 1 VSDS / V 120 110 WDSS% 100 90 80 1000 Ciss 70 60 50 100 40 Coss 30 Crss 20 10 0 10 0 20 20 40 40 VDS / V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 12 80 100 Ths / C 120 140 Fig.15. Normalised avalanche energy rating. WDSS% = f(Ths); conditions: ID = 9 A BUK454-200 VGS / V VDD + VDS / V =40 10 L 160 8 VDS - VGS 6 -ID/100 T.U.T. 0 4 2 0 60 RGS 0 4 8 12 16 QG / nC 20 24 28 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 9 A; parameter VDS April 1993 R 01 shunt 5 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 2 3 0.9 0.7 M 0.55 max 2.54 1.3 5.08 top view Fig.17. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Rev 1.100