HSMC HD122 Npn epitaxial silion darlington transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
Electrical Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Min.
100
100
5
1000
1000
Typ.
-
Max.
2
1
2
2.5
2.8
2.5
-
Unit
V
V
V
mA
mA
mA
V
V
V
Test Conditions
IC=1mA
IC=100mA
IE=100uA
VCE=50V
VCB=100V
VBE=5V
IC=1.5A, IB=30mA
IC=2A, IB=40mA
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Sturation Voltage & Collector Current
Collector Gain & Collector Current
10000
10000
Sturation Voltage (mV)
1000
25°C hFE @ VCE=4V
hFE
-40°C hFE @ VCE=4V
100
-40°C VCE(sat) @ IC=100IB
1000
25°C VCE(sat) @ IC=100IB
10
1
100
1
10
100
1000
10000
100
Collector Current-IC (mA)
Sturation Voltage & Collector Current
10000
On Voltage & Collector Current
10000
10000
-40¢
XC VBE(sat) @ IC=100IB
On Voltage (mV)
Sturation Voltage (mV)
1000
Collector Current-IC (mA)
25¢
XC VBE(sat) @ IC=100IB
1000
-40¢
XC VBE(on) @ VCE=4V
1000
25¢
XC VBE(on) @ VCE=4V
100
100
100
1000
10
10000
Collector Current-IC (mA)
100
1000
10000
Collector Current-IC (mA)
Switching Time & Collector Current
Capacitance & Reverse-Biased Voltage
10
1000
Capacitance (pF)
Switching Times (us)
VCC=30V, IC=250, IB1= -250IB2
Tstg
1
Tf
100
Cob
Ton
10
0.1
1
10
Collector Current-IC (A)
0.1
1
10
100
Reverse-Biased Voltage (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 3/4
MICROELECTRONICS CORP.
Safe Operating Area
Power Derating
1.2
100000
1.1
PT=1ms
1
PD/PD(max) -- Normalized
Power Dissipation
Collector Current-IC (mA)
10000
PT=100ms
1000
PT=1s
100
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
1
10
Forward-VCE (V)
100
0
50
100
150
200
Temperature (°C) -- Ta/Tc
HSMC Product Specification
HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 4/4
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking :
A
HSMC Logo
Part Number
Date Code
B
D
F
C
Rank
O
H
E
Product Series
Ink Marking
3
2
I
Style : Pin 1.Emitter 2.Collector 3.Base
G
N
1
J
M
L
K
3-Lead TO-126ML Plastic Package
HSMC Package Code : D
*:Typical
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1131
0.1231
0.0737
0.0837
0.0294
0.0494
0.0462
0.0562
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
2.87
3.12
1.87
2.12
0.74
1.25
1.17
1.42
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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