PD - 96337A IRFHS8242PbF HEXFET® Power MOSFET VDS 25 V VGS max ±20 V RDS(on) max 13.0 mΩ (@VGS = 10V) Qg (typical) ( @ VGS = 4.5V) ID (@Tc(Bottom) = 25°C) TOP VIEW D 2 4.3 8.5 nC d D 6 D D 1 D S G 3 D D 5 D D 4 S D G S S 2mm x 2mm PQFN A Applications • System/Load Switch Features and Benefits Features Low RDSon (≤ 13.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFHS8242TRPBF IRFHS8242TR2PBF PQFN 2mm x 2mm PQFN 2mm x 2mm Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ±20 9.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 8.0 21 ID @ TC(Bottom)= 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM c PD @TA = 70°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range PD @TA = 25°C Power Dissipation 25 V d d d 8.5d 17 A 84 2.1 f Units 1.3 0.02 -55 to + 150 W W/°C °C Notes through are on page 2 www.irf.com 1 11/30/10 IRFHS8242PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. BVDSS ∆ΒVDSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter 25 ––– ––– 18 ––– ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– 10.0 17.0 13.0 21.0 VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 ––– 1.8 -6.8 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 gfs Qg Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge ––– 19 ––– ––– -100 ––– 4.3 10.4 ––– ––– nC Qg Qgs ––– ––– VGS = 4.5V, VDS = 13V, ID = 8.5A VDS = 13V Gate-to-Source Charge ––– ––– 1.8 1.6 ––– ––– nC VGS = 10V ID = 8.5A (See Fig. 6 & 16) Ω h Total Gate Charge h h h Max. Units Qgd Gate-to-Drain Charge RG td(on) tr Gate Resistance Turn-On Delay Time ––– ––– 1.9 6.5 ––– ––– Rise Time Turn-Off Delay Time ––– ––– 19 5.4 ––– ––– Fall Time Input Capacitance ––– ––– 5.3 653 ––– ––– Output Capacitance ––– 171 ––– Reverse Transfer Capacitance ––– 78 ––– Min. Typ. td(off) tf Ciss Coss Crss Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 6.8A V VDS = VGS, ID = 25µA mV/°C µA nA S ed e VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 8.5A d d d e VDD = 13V, VGS = 4.5V ns = 8.5Ad ID RG=1.8Ω See Fig.17 VGS = 0V pF VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 8.5 d Conditions MOSFET symbol ––– ––– ––– ––– 84 ––– ––– 1.0 V ––– ––– 11 11 17 17 ns nC A showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 8.5A , VGS = 0V TJ = 25°C, IF = 8.5A , VDD = 13V di/dt = 280 A/µs d d e e S Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (<10s) g g f f Typ. ––– ––– ––– ––– Max. 13 90 60 42 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRFHS8242PbF 100 100 10 BOTTOM 1 2.7V 0.1 ≤60µs PULSE WIDTH 10 BOTTOM 2.7V 1 ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 150°C T J = 25°C 10 VDS = 15V ≤60µs PULSE WIDTH 1.0 ID = 8.5A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 8.5A C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.7V Crss 12.0 VDS= 20V VDS= 13V 10.0 VDS= 5.0V 8.0 6.0 4.0 2.0 0.0 10 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 12 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHS8242PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 TJ = 150°C TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 1msec 10 Limited by Wire Bond Tc = 25°C Tj = 150°C Single Pulse VGS = 0V DC 0.1 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 25 VGS(th) , Gate threshold Voltage (V) 2.4 Limited By Package 20 ID, Drain Current (A) 10msec 1 15 10 5 0 2.2 2.0 ID = 25µA 1.8 1.6 1.4 1.2 1.0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 35 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) IRFHS8242PbF ID = 8.5A 30 25 20 T J = 125°C 15 10 T J = 25°C 5 0 0 5 10 15 30 25 Vgs = 4.5V 20 15 Vgs = 10V 10 5 20 0 20 40 60 80 100 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 Single Pulse Power (W) 500 400 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.T Driver Gate Drive + - P.W. + * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 5 IRFHS8242PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 VGS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 17a. Switching Time Test Circuit 6 Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit VDS Qgd 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRFHS8242PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHS8242PbF PQFN 2x2 Outline Tape and Reel 8 www.irf.com IRFHS8242PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 2mm x 2mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2010 www.irf.com 9