Infineon BC818K-40 Npn silicon af transistor Datasheet

BC817.../BC818...
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types:
BC807.../W, BC808.../W (PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BC817-16
6As
1=B 2=E 3=C -
-
-
SOT23
BC817K-16*
6As
1=B 2=E 3=C -
-
-
SOT23
BC817-25
6Bs
1=B 2=E 3=C -
-
-
SOT23
BC817K-25*
6Bs
1=B 2=E 3=C -
-
-
SOT23
BC817-25W
6Bs
1=B 2=E 3=C -
-
-
SOT323
BC817K-25W*
6Bs
1=B 2=E 3=C -
-
-
SOT323
BC817-40
6Cs
1=B 2=E 3=C -
-
-
SOT23
BC817K-40*
6Cs
1=B 2=E 3=C -
-
-
SOT23
BC817-40W
6Cs
1=B 2=E 3=C -
-
-
SOT323
BC817K-40W*
6Cs
1=B 2=E 3=C -
-
-
SOT323
BC818-16W
6Es
1=B 2=E 3=C -
-
-
SOT323
BC818K-16W*
6Es
1=B 2=E 3=C -
-
-
SOT323
BC818-25
6Fs
1=B 2=E 3=C -
-
-
SOT23
BC818K-25*
6Fs
1=B 2=E 3=C -
-
-
SOT23
BC818-40
6Gs
1=B 2=E 3=C -
-
-
SOT23
BC818K-40*
6Gs
1=B 2=E 3=C -
-
-
SOT23
* Shrinked chip version
1Pb-containing
package may be available upon special request
1
2008-04-11
BC817.../BC818...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC817...
45
BC818...
25
Collector-base voltage
VCBO
BC817...
50
BC818...
30
5
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
500
mW
330
TS ≤ 115 °C, BC817K, BC818K
500
TS ≤ 130 °C, BC817W/KW, BC818...W/KW
250
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
mA
1000
TS ≤ 79 °C, BC817, BC818
150
°C
-65 ... 150
Value
BC817, BC818
≤ 215
BC817K, BC818K
≤ 70
BC817W/KW, BC818W/KW
≤ 80
1For
Unit
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2008-04-11
BC817.../BC818...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BC817...
45
-
-
IC = 10 mA, IB = 0 , BC818...
25
-
-
Collector-base breakdown voltage
-
V(BR)CBO
IC = 10 µA, IE = 0 , BC817...
50
-
-
IC = 10 µA, IE = 0 , BC818...
30
-
-
5
-
-
Emitter-base breakdown voltage
V(BR)EBO
V
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 25 V, IE = 0
-
-
0.1
VCB = 25 V, IE = 0 , TA = 150 °C
-
-
50
-
-
100
Emitter-base cutoff current
I EBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
h FE
IC = 100 mA, V CE = 1 V, h FE-grp.16
IC = 100 mA, V CE = 1 V, h FE-grp.25
100
160
250
160
250
400
IC = 100 mA, V CE = 1 V, h FE-grp.40
IC = 300 mA, V CE = 1 V, h FE-grp.162)
250
350
630
60
-
-
IC = 300 mA, V CE = 1 V, h FE-grp.252)
IC = 300 mA, V CE = 1 V, h FE-grp.402)
100
-
-
170
-
-
IC = 500 mA, V CE = 1 V, all hFE-grps.3)
40
-
-
Collector-emitter saturation voltage1)
VCEsat
-
-
0.7
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage 1)
VBEsat
-
-
1.2
V
IC = 500 mA, IB = 50 mA
1Pulse
test: t < 300µs; D < 2%
all BC817 and BC818 subtypes
3For all BC817K and BC818K subtypes
2For
3
2008-04-11
BC817.../BC818...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
170
-
AC Characteristics
Transition frequency
fT
MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
pF
Ccb
VCB = 10 V, f = 1 MHz1)
-
6
-
VCB = 10 V, f = 1 MHz2)
-
3
-
VEB = 0.5 V, f = 1 MHz1)
-
60
-
VEB = 0.5 V, f = 1 MHz2)
-
40
-
Emitter-base capacitance
1For
2For
Ceb
all BC817 and BC818 subtypes
all BC817K and BC818K subtypes
4
2008-04-11
BC817.../BC818...
DC current gain hFE = ƒ(IC)
VCE = 1 V
DC current gain hFE = ƒ(IC)
VCE = 1 V
h FE-grp.16
h FE-grp.25
h FE
10 3
h FE
10
3
10 2
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10 1 -5
10
10
-4
10
-3
10
-2
10
-1
10 1 -5
10
0
A 10
10
-4
10
-3
10
-2
10
IC
DC current gain hFE = ƒ(IC)
VCE = 1 V
-1
0
A 10
IC
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
h FE-grp.40
10 3
10 3
ΙC
BC 817/818
EHP00223
mA
150 ˚C
25 ˚C
-50 ˚C
10 2
hFE
5
10 2
10 1
105 °C
85 °C
65 °C
25 °C
-40 °C
5
10 0
5
10 1 -5
10
10
-4
10
-3
10
-2
10
-1
10 -1
0
A 10
IC
0
0.2
0.4
0.6
V
0.8
VCEsat
5
2008-04-11
BC817.../BC818...
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
Base-emitter saturation voltage
IC = ƒ(V BEsat), hFE = 10
BC 817/818
10 3
ΙC
EHP00222
10 5
mA
Ι CBO
150 ˚C
25 ˚C
-50 ˚C
10 2
BC 817/818
EHP00221
nA
10 4
5
max
10 3
10 1
5
typ
10 2
10 0
10 1
5
10 -1
0
1.0
2.0
3.0
V
10 0
4.0
0
50
100
V BEsat
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 3
TA
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
BC817, BC818: - - - , BC817K, BC818K: ___
EHP00218
75
pF
MHz
5
60
CCB/CEB
fT
BC 817/818
150
˚C
CEB: BC817/BC818
CEB: BC817K/BC818K
CCB: BC817/BC818
CCB: BC817K/BC818K
55
50
45
40
10 2
35
30
5
25
20
15
10
5
10 1
10 0
10 1
10 2
mA
0
0
10 3
2
4
6
8
10
12
14
16
V
20
VCB/V EB
ΙC
6
2008-04-11
BC817.../BC818...
Total power dissipation Ptot = ƒ(TS)
BC817, BC818: - - - , BC817K, BC818K: ___
Total power dissipation Ptot = ƒ(TS)
BC817W/KW, BC818W/KW
550
550
mW
mW
P tot
400
450
BC817K, BC818K
BC817, BC818
400
P tot
450
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
15
30
45
60
90 105 120 °C
75
0
0
150
15
30
45
60
90 105 120 °C
75
TS
150
TS
Permissible Pulse Load RthJS = ƒ(tp )
BC817, BC818
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BC817, BC818
10 3
10 4
Ptotmax /PtotDC
-
RthJS
10 2
10 1
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
s
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 3
10 1
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7
2008-04-11
BC817.../BC818...
Permissible Pulse Load RthJS = ƒ(tp )
BC817/K, BC818/K
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BC817K, BC818K
10 3
P totmax/P totDC
RthJS
10 2
10 1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
-
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
TP
s
10
0
10
0
TP
Permissible Puls Load RthJS = ƒ (tp)
Permissible Pulse Load
BC817W/KW, BC818W/KW
Ptotmax/P totDC = ƒ(tp)
BC817W/KW, BC818W/KW
10 3
10 3
Ptotmax /PtotDC
K/W
RthJS
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
8
2008-04-11
Package SOT23
BC817.../BC818...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
9
2008-04-11
Package SOT323
BC817.../BC818...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
10
2008-04-11
BC817.../BC818...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2008-04-11
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