AF6930N N-Channel Enhancement Mode Power MOSFET Features General Description - DC-DC Application - Surface Mount Package - Dual N-channel Device The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 50 ID (A) 5 Pin Descriptions Pin Assignments S1 1 8 D1 Pin Name Description S1/2 G1/2 D1/2 Source Gate Drain G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Ordering information Feature F :MOSFET A X 6930N X X X PN Package Lead Free Packing S: SO-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Sep 5, 2005 1/5 AF6930N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 30 ±20 5 4 20 2 0.016 -55 to 150 -55 to 150 TA=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 62.5 Max. Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Min. Typ. Max. Units 30 - - V - 0.037 - V/oC 1 - 6 50 80 3 - VDS=30V, VGS=0V - - 1 VDS=24V, VGS=0V - - 25 VGS=±20V ID=5A, VDS=15V, VGS=5V VDS=15V, ID=1.5A, RG=3.3Ω, VGS=10V RD=10Ω VGS=0V, VDS=25V, f=1.0MHz - 6.1 1.4 3.3 6.7 6.4 22.1 2.1 240 145 55 ±100 - Min. Typ. Max. Unit VD=VG=0V, VS=1.2V - - 1.67 V TJ=25ºC, IS=1.7A, VGS=0V - - 1.2 V VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=3.9A VDS=VGS, ID=250uA VDS=15V, ID=5A mΩ V S uA nA nC ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) 2 Test Conditions o Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.2 Sep 5, 2005 2/5 AF6930N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw Rev. 1.2 Sep 5, 2005 3/5 AF6930N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw Rev. 1.2 Sep 5, 2005 4/5 AF6930N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 6930N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information Package Type: SO-8 D 7 6 5 2 3 4 E1 E 8 1 L DETAIL A B C A1 A e θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw Rev. 1.2 Sep 5, 2005 5/5