IRF IRG4IBC20UD Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

PD -91752A
IRG4IBC20UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• 2.5kV, 60s insulation voltage U
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
outline
VCES = 600V
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
n-ch an nel
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to CaseU
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
–––
–––
2.0 (0.07)
3.7
5.1
65
–––
Units
°C/W
g (oz)
1
4/24/2000
IRG4IBC20UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown VoltageS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
V(BR)CES
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Min.
600
–––
–––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward TransconductanceT
1.4
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.69
1.85
2.27
1.87
–––
-11
4.3
–––
–––
1.4
1.3
–––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
––– V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 6.5A
VGE = 15V
–––
V
IC = 13A
See Fig. 2, 5
–––
IC = 6.5A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 250µA
–––
S
VCE = 100V, IC = 6.5A
250
µA
VGE = 0V, VCE = 600V
1700
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 8.0A
See Fig. 13
1.6
IC = 8.0A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M /dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
27
4.5
10
39
15
93
110
0.16
0.13
0.29
38
17
100
220
0.49
7.5
530
39
7.4
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
41
IC = 6.5A
6.8
nC
VCC = 400V
See Fig. 8
16
VGE = 15V
–––
TJ = 25°C
–––
ns
IC = 6.5A, VCC = 480V
140
VGE = 15V, RG = 50Ω
170
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.3
–––
TJ = 150°C, See Fig. 9, 10, 11, 18
–––
ns
IC = 6.5A, VCC = 480V
–––
VGE = 15V, RG = 50Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
55
ns
TJ = 25°C See Fig.
90
TJ = 125°C
14
IF = 8.0A
5.0
A
TJ = 25°C See Fig.
8.0
TJ = 125°C
15
VR = 200V
138
nC
TJ = 25°C See Fig.
360
TJ = 125°C
16
di/dt 200A/µs
––– A/µs TJ = 25°C See Fig.
–––
TJ = 125°C
17
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IRG4IBC20UD
10.0
For both:
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
G ate drive as specified
P ow e r Dis sip ation = 9.5 W
LOAD CURRENT (A)
8.0
6.0
S q u a re w a v e :
6 0% of rate d
volta ge
4.0
I
2.0
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)
100
T J = 25°C
T J = 150°C
10
1
V G E = 15V
20µs PULSE WIDTH
0.1
0.1
1
Fig. 2 - Typical Output Characteristics
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A
TJ = 25 °C
1
V C C = 10 V
5 µs P U L S E W IDTH
0.1
10
VC E , Collector-to-Emitter Voltage (V)
TJ = 1 5 0°C
10
4
6
8
10
A
12
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4IBC20UD
2.6
V C E , C ollector-to-E m itter V oltag e (V)
Maximum DC Collector Current(A)
12
10
8
6
4
2
0
V G E = 1 5V
8 0 µs P U L S E W ID TH
I C = 1 3A
2.2
1.8
I C = 6 .5A
1.4
I C = 3.3 A
A
1.0
25
50
75
100
125
150
-60
TC , Case Temperature ( ° C)
-40
-20
0
20
40
60
80
100 120
140 160
T J , J u n c tio n Te m p e ra tu re (°C )
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
P DM
0.02
0.1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC20UD
V GE =
C ie s =
C re s =
C oes =
800
20
0V ,
f = 1M H z
C g e + C g c , C ce S H O R TE D
C gc
C ce + C g c
V G E , G a te -to -E m itte r V o lta g e (V )
C, Ca pac itanc e (p F)
1000
C ie s
600
C oes
400
C re s
200
A
0
1
10
VCE = 400V
I C = 6 .5 A
16
12
8
4
A
0
0
100
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
10
= 480V
= 15V
= 25 °C
= 6 .5A
0.31
0.30
A
0.29
0
10
20
30
40
50
R G , G a te R e sista n c e ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total S witching Los se s (m J)
Total Switching Losses (m J)
V CC
VGE
TJ
IC
15
Q g , T o ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.32
10
60
R G = 50 Ω
V GE = 15V
V CC = 4 8 0 V
IC = 1 3 A
1
I C = 6 .5 A
I C = 3 .3 A
A
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4IBC20UD
100
= 50 Ω
= 1 5 0 °C
= 480V
= 15V
I C , Collector Current (A)
RG
TJ
V CC
V GE
0.9
0.6
0.3
VGE = 20V
T J = 125 oC
10
1
SAFE OPERATING AREA
A
0.0
0
2
4
6
8
10
12
0.1
1
14
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
Total Switc hing Losses (mJ )
1.2
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4IBC20UD
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
80
I F = 8 .0A
I IR R M - (A )
t rr - (ns)
IF = 16 A
60
I F = 1 6A
10
IF = 8 .0 A
40
I F = 4.0 A
I F = 4 .0 A
20
0
100
1
100
1000
d i f /d t - (A /µ s)
1000
di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
di(rec)M/dt - (A /µ s)
Q R R - (nC )
400
300
I F = 16 A
200
I F = 8 .0A
I F = 4 .0A
1000
I F = 8.0 A
I F = 16 A
100
IF = 4.0 A
0
100
di f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
100
100
1000
di f /dt - (A /µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4IBC20UD
Same ty pe
device as
D .U.T.
90%
10%
Vge
430µF
80%
of Vce
VC
D .U .T.
90%
t d(off)
10%
IC 5%
tf
tr
t d(on)
t=5µs
Eon
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
trr
id d t
tx
∫
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
E o n = V ce ie d t
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC20UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
D.U.T.
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4IBC20UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
U t = 60s, f = 60Hz
Case Outline — TO-220 FULLPAK
1 0 .6 0 (.4 1 7 )
1 0 .4 0 (.4 0 9 )
ø
3 .4 0 (.1 3 3 )
3 .1 0 (.1 2 3 )
4 .8 0 (.1 8 9 )
4 .6 0 (.1 8 1 )
-A 3 .7 0 (.1 4 5 )
3 .2 0 (.1 2 6 )
1 6 .0 0 (.6 3 0 )
1 5 .8 0 (.6 2 2 )
2 .8 0 (.1 10 )
2 .6 0 (.1 02 )
L E A D A S S IG N M E N T S
LEAD ASSIGMENTS
1 - GATE
1- GATE
2 - D R A IN
2- COLLECTOR
3 - S OU R CE
3- EMITTER
7 .10 (.2 8 0 )
6 .70 (.2 6 3 )
1 .1 5 (.0 4 5 )
M IN .
NOTES:
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2
1
2
3
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 )
3 .1 0 (.1 2 2 )
-B -
1 3 .7 0 (.5 4 0 )
1 3 .5 0 (.5 3 0 )
C
A
1 .4 0 (.0 5 5 )
3X
1 .0 5 (.0 4 2 )
0 .9 0 (.0 3 5 )
3 X 0 .7 0 (.0 2 8 )
0 .2 5 (.0 1 0)
2 .5 4 (.1 0 0 )
2X
3X
M
A M
B
0 .4 8 (.0 1 9 )
0 .4 4 (.0 1 7 )
2 .8 5 (.1 1 2 )
2 .6 5 (.1 0 4 )
D
B
M IN IM U M C R E E P A G E
D IS T A N C E B E T W E E N
A -B -C -D = 4 .8 0 (.1 89 )
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Data and specifications subject to change without notice. 4/00
10
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