PHILIPS BFR540 Npn 9 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1995 September
1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFR540
The transistor is encapsulated in a
plastic SOT23 envelope.
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
PINNING
3
fpage
PIN
DESCRIPTION
Code: N29
1
base
2
emitter
1
collector
Top view
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
RBE = 0
−
−
15
V
−
−
120
mA
−
−
500
mW
VCES
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
up to Ts = 70 °C; note 1
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
S212
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 70 °C; note 1
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
from junction to soldering point
CONDITIONS
see note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
3
THERMAL RESISTANCE
260 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = 8 V
−
−
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
nA
pF
S212
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
Vo
output voltage (note 3)
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 Ω; Tamb = 25 °C
−
550
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log --------------------------------------------------------2
2
( 1 – S 11 ) ( 1 – S 22 )
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
1999 Aug 23
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
MRA687
MEA398 - 1
600
1/2 page (Datasheet)
250
handbook, halfpage
hFE
22 mm
P tot
(mW)
200
400
150
100
200
50
0
0
50
150
100
Ts
0
10−2
200
( o C)
10−1
10 I (mA) 102
C
1
VCE = 8 V.
Fig.3
Fig.2 Power derating curve.
MRA688
1.0
Cre
(pF)
DC current gain as a function of collector
current.
MRA689
12
handbook, halfpage
handbook, halfpage
fT
(GHz)
0.8
VCE = 8V
8
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
1
IC = 0; f = 1 MHz.
Tamb = 25 °C; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
1999 Aug 23
5
10
IC (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA690
25
MRA691
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
Gmax
MSG
15
15
GUM
10
10
5
5
0
0
20
40
IC (mA)
Gmax
GUM
0
60
0
VCE = 8 V; f = 900 MHz.
20
40
IC (mA)
VCE = 8 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA692
MRA693
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
40
GUM
40
MSG
MSG
30
60
30
20
20
Gmax
10
0
10
102
103
f (MHz)
0
10
104
102
103
f (MHz)
104
VCE = 8 V; Ic = 40 mA.
VCE = 8 V; Ic = 10 mA.
Fig.8 Gain as a function of frequency.
1999 Aug 23
Gmax
10
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA698
BFR540
MRA699
Fmin
20
Gass
handbook, halfpage
(dB)
4
(dB)
15
(dB)
4
5
handbook, halfpage
f = 900 MHz
5
Fmin
Gass
40 mA
20
Gass
(dB)
15
Gass
1000 MHz
2000 MHz 10
3
IC = 10 mA
10
3
2000 MHz
5
2
1000 MHz
900 MHz
500 MHz
1
40 mA
0
10
1
−5
102
0
1
5
2
Fmin
IC (mA)
10 mA
Fmin
0
0
102
103
f (MHz)
−5
104
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
pot. unst.
region
Fmin = 1.3 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
0.2
1
2
5
0°
F = 1.5 dB
stability
circle
0
F = 2 dB
5
0.2
F = 3 dB
−135°
0.5
2
−45°
1
MRA700
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
1999 Aug 23
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
G = 5 dB
Gmax = 7.8 dB
G = 7 dB
G = 6 dB
0.4
5
Γ MS
180°
0.2
0.2
0
0.5
1
2
5
0°
0
Fmin = 2.1 dB
Γ OPT
0.2
5
F = 2.5 dB
F = 3 dB
−135°
0.5
F = 4 dB
2
−45°
1
MRA701
−90°
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1999 Aug 23
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
0.2
180°
0.2
0
0.5
1
2
0.2
5
0°
5
40 MHz
0.5
−135°
2
0
−45°
1
MRA694
−90°
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA695
VCE = 8 V; IC = 40 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Aug 23
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRA696
VCE = 8 V; IC = 40 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
0.2
−135°
0.5
2
5
−45°
1
MRA697
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
−90°
Fig.17 Common emitter output reflection coefficient (S22).
1999 Aug 23
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Aug 23
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 67
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Aug 23
Document order number:
9397 750 06338