1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. Important: For the latest information, visit our website http://www.microsemi.com. DO-35 (DO-204AH) Package FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers. • Metallurgically bonded. • JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on “1N” numbers only. (See Part Nomenclature for all available options). • Also available in: UB package (3-pin surface mount) 1N5711UB, 1N5712UB (B, CC, CA) RoHS compliant versions available (commercial grade only). DO-213AA package (surface mount) 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 APPLICATIONS / BENEFITS • Low reverse leakage characteristics. • Small size for high density mounting using flexible thru-hole leads (see package illustration). • ESD sensitive to Class 1. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction-to-Lead @ lead length = 0.375 inch (9.52 mm) from body Average Rectified Output Current: Symbol TJ and TSTG R ӨJL Value -65 to +150 250 Unit ºC ºC/W IO 33 75 150 260 mA (1) 1N5711 (2) DSB2810, DSB5712, 1N5712 & 1N6858 (3) 1N6857 Solder Temperature @ 10 s NOTES: 1. At T L = +130°C and L = 0.375 inch, derate I O to 0 at +150°C. 2. At T L = +110°C and L = 0.375 inch, derate I O to 0 at +150°C. 3. At T L = +70°C and L = 0.375 inch, derate I O to 0 at +150°C. o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed glass package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode indicated by band. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 -1 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level CDS (reference JANS)* Blank = Commercial grade RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded *Available only on 1N5711-1 JEDEC type number (see Electrical Characteristics table) DSB 2810 (e3) Diode Schottky Barrier RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol C f IR IO t rr V (BR) Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R. Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Breakdown Voltage: A voltage in the breakdown region. VF Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. VR Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. V RWM T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted TYPE NUMBER 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE WORKING PEAK REVERSE VOLTAGE V (BR) @ 10 µA Volts 70 20 20 70 20 20 V F @ 1 mA Volts 0.41 0.41 0.35 0.36 0.41 0.41 VF @ IF V @ mA 1.0 @ 15 1.0 @ 35 0.75 @ 35 0.65 @ 15 1.0 @ 35 1.0 @ 35 V RWM V (pk) 50 16 16 50 16 16 T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation MAXIMUM REVERSE LEAKAGE CURRENT nA 200 150 150 200 100 150 IR @ VR Volts 50 16 16 50 15 16 MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz C pF 2.0 2.0 4.5 4.5 2.0 2.0 Page 3 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 IF – Forward Current (mA) GRAPHS V F – Forward Voltage (V) IR – Reverse Current (nA) FIGURE 1 I-V Curve showing typical Forward Voltage Variation Temperature for the 1N5712-1, DSB5712 and DSB2810 Schottky Diodes V R – Reverse Voltage (V) (PULSED) FIGURE 2 1N5712-1, DSB5712 and DSB2810 Typical variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 4 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 IF – Forward Current (mA) GRAPHS V F – Forward Voltage (V) IR – Reverse Current (nA) FIGURE 3 I – V curve showing typical Forward Voltage Variation With Temperature Schottky Diode 1N5711 V R – Reverse Voltage (V) (PULSED) FIGURE 4 1N5711 Typical Variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 5 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 RD – Dynamic Resistance (Ohms) GRAPHS I F – Forward Current (mA) (PULSED) FIGURE 5 Typical Dynamic Resistance (R D ) vs Forward Current (I F ) T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Dimensions BL and LD includes all components of the diode periphery expect the section of the leads over which the diameter is controlled. 3. Dimension BD shall be measured at the largest diameter. 4. In accordance with ASME Y1.4M, diameters are equivalents to φx symbology. T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Symbol BD BL LD LL Dimensions Inches Millimeters Min Max Min Max 0.068 0.076 1.73 1.93 0.125 0.170 3.18 4.32 0.014 0.022 0.36 0.56 1.000 1.500 25.40 38.10 Notes 2,3 2 Page 7 of 7