HOTTECH M1 Plastic-encapsulate diode Datasheet

Plastic-Encapsulate Diodes
1.0 AMP. Surface Mount Rectifiers
M1---M7
FEATURES
For surface mounted application
Low forward voltage drop
52
0
32
High current capability
Easy pick and place
7
4.50
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0 260oC / 10 seconds at terminals
High reliability grade (AEC Q101 qualified)
MECHANICAL DATA
Case: Molded plastic
DO-214AC (SMA)
Terminals: Pure tin plated, lead free
solderable per J-STD-002B and JESD22-B102D.
Polarity: Indicated by cathode band
Packaging: 12mm tapeper EIA STD RS-481
Weight: 0.064 gram
MAXIMUM RATINGS
AND
ELECTRICAL CHARACTERISTICS
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
Symbols
M1
M2
M3
M4
M5
M6
M7
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Parameter
Maximum Average Forward Rectified Current at
I(A)
1
A
IFSM
30
A
VF
1.1
V
TL =100 OC
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method)
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance 1)
TA = 25 OC
IR
O
TA = 125 C
Maximum Thermal Resistance 2)
Operating and Storage Temperature Range
5
µA
200
CJ
15
RθJL
30
TJ, TS
- 50 to + 150
pF
O
C/W
O
C
1) Measured at 1MHz and applied reverse voltage of 4 V
2) 8 mm2 (0.013 mm thick) land areas
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P2-P1
Plastic-Encapsulate Diodes
M1---M7 Typical Characteristics
2.0
1.0
25 50 75 100 125 150175
LEAD TEMPERATURE .o C
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
30
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
25
15
10
5
1
INSTANTANEOUS FORWARD CURRENT,
MICROAMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10
Tj =125o C
Tj =75o C
Tj =25o C
0.01
0.001
0
20
40
60
5
10
20
50
100
Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
0.1
2
NUMBER OF CYCLES AT 60 Hz
Fig. 1-FORWARD CURRENT
DERATING CURVE
1
8.3ms Single Half Sine Wave
(JEDEC Method)
20
80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE, %
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD
VOLTAGE , VOLTS
Fig. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Fig. 3-TYPICAL REVERSE
CHARACTERISTICS
500
200
100
50
Units Mounted On
20in2 (5.4mm 2 )+0.5mil
inches(0.013mm)
Thick Copper Land Areas
CAPACITANCE. pF
THERMAL IMPEDANCE (oC/W)
1000
20
10
5
2
1
0.01
0.1
1
10
Tj =25 oC
f=1.0MHz
Vsig=50mVp-p
50
20
10
5
2
1
0
1.0
10
100
1000
100
REVERSE VOLTAGE VOLTS
REVERSE VOLTAGE VOLTS
Fig. 5-TRANSIENT THERMAL IMPEDANCE
GUANGDONG HOTTECH
100
Fig. 6-TYPICAL JUNCTION CAPACITANCE
INDUSTRIAL CO,. LTD.
Page:P2-P2
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