IDT71124 CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a costeffective solution for high-speed memory needs. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. The IDT71124 has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns available. All bidirectional inputs and outputs of the IDT71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ. 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial and Industrial: 12/15/20ns One Chip Select plus one Output Enable pin Bidirectional inputs and outputs directly TTL-compatible Low power consumption via chip deselect Available in a 32-pin 400 mil Plastic SOJ. Functional Block Diagram A0 • • • ADDRESS DECODER • • • 1,048,576-BIT MEMORY ARRAY A16 I/O0 - I/O7 8 • I/O CONTROL 8 , 8 WE OE CS CONTROL LOGIC 3514 drw 01 FEBRUARY 2001 1 ©2000 Integrated Device Technology, Inc. DSC-3514/10 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Pin Configuration Absolute Maximum Ratings(1) Symbol A0 A1 A2 A3 CS I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8 1 32 2 31 3 30 4 29 5 28 6 SO32-3 27 7 26 8 25 9 24 23 10 22 11 21 12 13 20 14 19 15 18 16 17 , Rating Value Unit V VTERM (2) Terminal Voltage with Respect to GND -0.5 to +7.0(2) TA Operating Temperature 0 to +70 o C TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -55 to +125 o C PT Power Dissipation 1.25 W IOUT DC Output Current 50 mA 3514 tbl 02 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabilty. 2. VTERM must not exceed Vcc + 0.5V. 3514 drw 02 SOJ Top View Capacitance (TA = +25°C, f = 1.0MHz) CS OE WE I/O L L H DATAOUT Read Data L X L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z Deselected - Standby (I SB) VHC(3) X X High-Z Deselected - Standby (I SB1) NOTES: 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = VCC -0.2V. 3. Other inputs ≥ VHC or ≤ VLC. Parameter(1) Symbol Truth Table(1,2) Function CIN Input Capacitance CI/O I/O Capacitance Conditions Max. Unit VIN = 3dV 8 pF VOUT = 3dV 8 pF 3514 tbl 03 NOTE: 1. This parameter is guaranteed by device characterization, but is not production tested. 3514 tbl 01 Recommended Operating Temperature and Supply Voltage Grade Temperature GND VCC Commercial 0°C to +70°C 0V 5.0V ± 10% Industrial –40°C to +85°C 0V 5.0V ± 10% 3514 tbl 04 Recommended DC Operating Conditions Symbol Parameter VCC Supply Voltage GND Ground VIH VIL Input High Voltage Input Low Voltage Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V 2.2 ____ VCC +0.5 V ____ 0.8 -0.5 (1) V 3514 tbl 05 6.42 2 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges DC Electrical Characteristics (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges) Symbol |ILI| |ILO| Parameter Test Conditions Min. Max. Unit Input Leakage Current VCC = Max., VIN = GND to VCC ___ 5 µA Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC ___ 5 µA ___ 0.4 V 2.4 ___ V VOL Output Low Voltage IOL = 8mA, VCC = Min. VOH Output High Voltage IOH = –4mA, VCC = Min. 3514 tbl 06 DC Electrical Characteristics(1) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC 0.2V) 71124S12 Symbol Parameter 71124S15 71124S20 Com'l. Ind. Com'l. Ind. Com'l. Ind. Unit ICC Dynamic Operating Current CS < VIL, Outputs Open, VCC = Max., f = fMAX(2) 160 160 155 155 140 140 mA ISB Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open, VCC = Max., f = fMAX(2) 40 40 40 40 40 40 mA ISB1 Full Standby Power Supply Current (CMOS Level) CS > VHC, Outputs Open, VCC = Max., f = 0(2) VIN < VLC or VIN > VHC 10 10 10 10 10 10 mA 3514 tbl 07 NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing. AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 3ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figure 1 and 2 3514 tbl 08 AC Test Loads 5V 5V 480Ω 480Ω DATA OUT DATA OUT 30pF 255Ω . 5pF* 255Ω 3514 drw 04 3514 drw 03 *Including jig and scope capacitance. Figure 1. AC Test Load Figure 2. AC Test Load (for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ) 6.42 3 . IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges) 71124S12 Sym bol Param eter 71124S15 71124S20 Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Re ad Cyc le Tim e 12 ____ 15 ____ 20 ____ ns tAA A d d re ss A cc e ss Tim e ____ 12 ____ 15 ____ 20 ns tACS Chip S e le ct A cc e ss Tim e ____ 12 ____ 15 ____ 20 ns tCLZ(1) Chip Se le c t to Outp ut in Lo w-Z 3 ____ 3 ____ 3 ____ ns tCHZ Chip De se le c t to Outp ut in Hig h-Z 0 6 0 7 0 8 ns tOE Outp ut E nab le to Outp ut Valid ____ 6 ____ 7 ____ 8 ns tOLZ(1) Outp ut E nab l e to Outp ut in Lo w-Z 0 ____ 0 ____ 0 ____ ns tOHZ(1) Outp ut Disab le to O utp ut in Hig h-Z 0 5 0 5 0 7 ns 4 ____ 4 ____ ns (1) tOH Outp ut Ho ld fro m A d d re ss Chang e 4 ____ tPU(1) Chip S e le ct to P o we r-Up Tim e 0 ____ 0 ____ 0 ____ ns tPD(1) Chip De s e le c t to P o we r-Do wn Tim e ____ 12 ____ 15 ____ 20 ns Write Cy c le Tim e 12 ____ 15 ____ 20 ____ ns 8 ____ 12 ____ 15 ____ ns 8 ____ 12 ____ 15 ____ ns 0 ____ 0 ____ 0 ____ ns 8 ____ 12 ____ 15 ____ ns 0 ____ 0 ____ 0 ____ ns 6 ____ 8 ____ 9 ____ ns 0 ____ 0 ____ 0 ____ ns 3 ____ 4 ____ ns 0 5 0 8 WRITE CYCLE tWC tAW A d d re ss V alid to End o f W rite tCW Chip S e le c t to E nd o f W rite tAS A d d re ss S e t-up Tim e tWP Write Pulse W id th tWR Write Re co v e ry Tim e tDW Data Valid to E nd -o f-Write tDH Data Ho ld Tim e (1) tOW Outp ut active fro m End -o f-Write 3 ____ tWHZ(1) W rite E nab le to Outp ut in Hig h-Z 0 5 NOTE: 1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested. 6.42 4 ns 3514 tbl 09 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 1(1) tRC ADDRESS tAA OE tOE CS tOLZ tCLZ DATAOUT VCC SUPPLY ICC CURRENT ISB (5) (5) tACS (3) tCHZ HIGH IMPEDANCE (5) tOHZ (5) . DATAOUT VALID tPD tPU 3514 drw 05 Timing Waveform of Read Cycle No. 2(1,2,4) tRC ADDRESS tAA tOH DATAOUT tOH PREVIOUS DATAOUT VALID . DATAOUT VALID 3514 drw 06 NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured ±200mV from steady state. 6.42 5 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4) tWC ADDRESS tAW CS tWR tAS tWP (2) . WE tWHZ (5) tOW (5) HIGH IMPEDANCE (3) DATAOUT (3) tDH tDW DATAIN tCHZ (5) DATAIN VALID 3514 drw 07 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4) tWC ADDRESS tAW CS tAS tCW tWR . WE tDW tDH DATAIN VALID DATAIN 3514 drw 08 NOTES: 1. A write occurs during the overlap of a LOW CS and a LOW WE. 2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP. 3. During this period, I/O pins are in the output state, and input signals must not be applied. 4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write period. 5. Transition is measured ±200mV from steady state. 6.42 6 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Ordering Information IDT 71124 S XX X X Device Type Power Speed Package Process/ Temperature Range Blank Commercial (0°C to +70°C) I Industrial (–40°C to +85°C) Y 400-mil SOJ (SO32-3) 12 15 20 Speed in nanoseconds 3514 drw 09 6.42 7 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Datasheet Document History 8/5/99 8/13/99 9/30/99 2/18/00 3/14/00 4/01/00 8/09/00 02/01/01 Pg. 3 Pg. 4 Pg. 6 Pg. 8 Pg. 1, 3, 4, 7 Pg. 3 Pg. 3 Pg.4 Updated to new format Removed military entries on DC table Removed Note 1 and renumbered footnotes Revised footnotes on Write Cycle No. 1 diagram Added Datasheet Document History Added 12ns, 15ns, and 20ns industrial temperature speed grade offerings Revise ISB for Industrial Temperature offerings to meet commerical specifications Revised ISB to accomidate speed functionality Tightened tAW, tCW, tWP and tDW within the AC Electrical Characteristics Not recommended for new designs Removed "Not recommended for new designs" CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 8 for Tech Support: [email protected] 800-544-7726, x4033