HMC266 v03.0907 MIXERS - SUB-HARMONIC - CHIP 3 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Typical Applications Features The HMC266 is ideal for: Input IP3: Up to +17 dBm • 23, 26, & 38 GHz Point-to-Point Radios Sub-Harmonically Pumped (x2) LO • LMDS Small Size: 1.34 x 1.49 x 0.01 mm • SATCOM Functional Diagram General Description The HMC266 chip is a broadband GaAs MMIC sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). These devices are much smaller and more reliable than hybrid diode mixer designs. Electrical Specifi cations, TA = +25° C, LO Drive = +12 dBm IF = 1 GHz Parameter Units Min. 3 - 28 Typ. Max. Frequency Range, RF 20 - 40 GHz Frequency Range, LO 10 - 20 GHz Frequency Range, IF 1-3 GHz Conversion Loss 12 16 dB Noise Figure (SSB) 12 16 dB 2LO to RF Isolation 42 52 LO to RF Isolation 20 24 dB 2LO to IF Isolation 50 60 dB RF to IF Isolation 16 22 dB LO to IF Isolation 48 55 dB IP3 (Input) 10 13 dBm 1 dB Compression (Input) 0 +4 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB HMC266 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Conversion Gain vs. Temperature @ LO = +12 dBm Isolation @ LO = +12 dBm 0 0 LO/RF -10 -15 RF/IF -20 LO/IF -40 2LO/RF -50 -60 2LO/IF -70 -20 -80 15 20 25 30 35 40 15 20 RF FREQUENCY (GHz) 25 30 35 40 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive Return Loss @ LO = +12 dBm 0 0 -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 3 -30 +14dBm +12dBm +10dBm +16dBm -10 -15 -5 -10 -15 LO/RL RF/RL +8dBm -20 -20 15 20 25 30 35 40 0 5 10 RF FREQUENCY (GHz) 20 25 30 35 40 Upconverter Performance Conversion Gain @ LO = +12 dBm IF Bandwidth @ LO = +12 dBm 0 0 Conversion Gain IF Return Loss CONVERSION GAIN (dB) CONVERSION GAIN (dB) 15 FREQUENCY (GHz) MIXERS - SUB-HARMONIC - CHIP -55C +25C +85C -5 ISOLATION (dB) CONVERSION GAIN (dB) -10 -5 -10 -15 -20 -5 -10 -15 -20 0 1 2 RF FREQUENCY (GHz) 3 4 15 20 25 30 35 40 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 29 HMC266 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Input IP3 vs. Temperature @ LO = +12 dBm 20 15 15 IP3 (dBm) 20 10 +12 dBm +14 dBm +16 dBm 5 -55C +25C +85C 0 20 25 30 35 40 20 25 RF FREQUENCY (GHz) 30 35 40 RF FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = +12 dBm Input IP2 vs. LO Drive 100 100 +12 dBm +14 dBm +16 dBm -55C +25C +85C 95 IP2 (dBm) 95 90 85 90 85 80 80 20 25 30 35 40 20 25 RF FREQUENCY (GHz) ±5 ±4 ±3 ±1 9 0 67 50 29 0 70 1 1 2 63 3 69 79 RF = 27 GHz @ -10 dBm LO = 13 GHz @ +12 dBm drive level All values in dBc below IF power level 23 19 x 63 66 6 INPUT P1dB (dBm) 8 -1 40 10 ±2 -3 -2 35 P1dB vs. Temperature @ LO = +12 dBm nLO mRF 30 RF FREQUENCY (GHz) MxN Spurious Outputs as a Down Converter 3 - 30 10 5 0 IP2 (dBm) MIXERS - SUB-HARMONIC - CHIP 3 IP3 (dBm) Input IP3 vs. LO Drive -55C +25C +85C 7 6 5 4 3 2 1 0 20 25 30 35 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 40 HMC266 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Absolute Maximum Ratings RF / IF Input +13 dBm +23 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3 MIXERS - SUB-HARMONIC - CHIP LO Drive Outline Drawing Die Packaging Information [1] Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BOND PAD SPACING CENTER TO CENTER IS .006”. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 31 HMC266 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Pad Descriptions MIXERS - SUB-HARMONIC - CHIP 3 3 - 32 Pad Number Function Description 1 RF This pad is AC coupled and matched to 50 Ohms. 2 IF This pad is DC coupled and matched to 50 Ohms. 3 LO This pad is AC coupled and matched to 50 Ohms. Die Bottom GND . Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC266 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. MIXERS - SUB-HARMONIC - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 33