SMD Efficient Fast Recovery Rectifier CEFA101-G Thru CEFA105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place DO-214AC (SMA) Plastic package has Underwriters Lab. flammability classification 94V-0. 0.067(1.70) 0.051(1.29) Super fast recovery time for high efficient Built-in strain relief 0.110(2.79) 0.086(2.18) 0.180(4.57) 0.160(4.06) Low forward voltage drop 0.012(0.31) 0.006(0.15) Mechanical Data: 0.091(2.31) 0.067(1.70) Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram 0.059(1.50) 0.035(0.89) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Parameter Symbol CEFA101-G CEFA102-G VRRM 50 100 200 400 600 V Max. DC Blocking Voltage VDC 50 100 200 400 600 V Max. RMS Voltage VRMS 35 70 140 280 420 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Voltage at 1.0A VF 0.92 1.25 1.3 V Reverse recovery time Trr 25 35 50 nS Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature CEFA103-G CEFA104-G CEFA105-G 5.0 200 Unit uA 25 o C/W Tj 150 oC TSTG -55 to +150 R JL o C Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 copper pad areas. “-G” suffix designates RoHS compliant Version Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFA101-G Thru CEFA105-G) Fig. 1 - Reverse Characteristics Fig.2 - Forward Characteristics 10 100 CEFA101-103 Forward current ( A ) Reverse Current (uA) Tj=125 C 10 Tj=75 C 1.0 Tj=25 C 0.1 CEFA104 1.0 0.1 CEFA105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.01 0.001 0 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 1.6 1.8 2.0 Fig. 4 - Non Repetitive Forward Surge Current Fig. 3 - Junction Capacitance 35 Peak Surge Forward Current (A) 50 f=1MHz and applied 4VDC reverse voltage 30 Junction Capacitance (pF) 1.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Tj=25 C 25 20 CEFA101-103 15 10 0.6 0.8 1.0 1.2 CEFA104-105 5 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 0 0 0.01 0.1 1.0 10 1 100 Reverse Voltage (V) 5 10 50 100 Number of Cycles at 60Hz Fig 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.8 trr 10 NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) 0 D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1 NONINDUCTIVE 2.4 Average Forward Current (A) 50 NONINDUCTIVE -0.25A (+) OSCILLISCOPE (NOTE 1) Notes: 1. Rise Time = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. -1.0A 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm Set Time Base For 50 / 10ns / cm Ambient Temperature ( C) “-G” suffix designates RoHS compliant Version Page2