NRVTSS5100E, NRVTSAF5100E Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS MARKING DIAGRAMS Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation LED Lighting Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements A Y WW G SMB CASE 403A AYWW TE51G G SMA−FL CASE 403AA STYLE 6 E51 AYWWG = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NRVTSS5100ET3G SMB (Pb−Free) 5000 / Tape & Reel NRVTSAF5100ET3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 1 1 Publication Order Number: NRVTSS5100E/D NRVTSS5100E, NRVTSAF5100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 100 Average Rectified Forward Current (TL = 100°C) IF(AV) 5.0 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 83°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit °C/W Maximum Thermal Resistance, Steady State (Note 1) (NRVTSAF5100E) Junction−to−Lead RθJL Junction−to−Ambient RθJA 90 Junction−to−Lead RθJL 13.1 Junction−to−Ambient RθJA 71.1 (NRVTSS5100E) 1. Assumes 600 mm2 25 1 oz. copper bond pad, on a FR4 board ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 5.0 A, TJ = 25°C) Typ Max 0.56 0.65 − 0.69 0.50 0.56 − 0.62 2.6 2.2 9 5 vF (iF = 3.0 A, TJ = 125°C) (iF = 5.0 A, TJ = 125°C) Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd Unit V mA mA pF 54.4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTSS5100E, NRVTSAF5100E TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 175°C TA = 150°C 10 TA = 25°C TA = 125°C TA = 85°C 1 TA = −55°C 0.3 0.4 0.5 0.6 0.7 TA = 25°C TA = 125°C TA = 85°C 1 TA = −55°C 0.8 0.9 1.0 1.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 TA = 175°C TA = 125°C 1.E−04 TA = 85°C TA = 175°C TA = 150°C 1.E−02 TA = 150°C 1.E−03 TA = 125°C 1.E−03 TA = 85°C 1.E−04 1.E−05 1.E−05 1.E−06 TA = 25°C 1.E−06 TA = 25°C 1.E−07 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) 10 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 TJ = 25°C 100 10 0.1 TA = 150°C 0.1 0.2 1.E−01 1.E−07 10 TA = 175°C IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 9 DC 8 7 6 Square Wave 5 4 3 2 1 RqJL = 13.1°C/W 0 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Diode for NRVTSS5100E www.onsemi.com 3 NRVTSS5100E, NRVTSAF5100E 9 18 RqJL = 24.4°C/W DC 8 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 7 6 Square Wave 5 4 3 2 12 10 Square Wave 6 4 0 0 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) IPK/IAV = 5 8 2 20 IPK/IAV = 10 14 1 0 IPK/IAV = 20 16 DC 0 160 1 2 3 4 5 6 IF(AV), AVERAGE FORWARD CURRENT (A) 7 Figure 8. Forward Power Dissipation Figure 7. Current Derating per Diode for NRVTSAF5100E 1000 R(t), (°C/W) 100 50% Duty Cycle 20% 10% 5% 10 2% 1% 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (S) Figure 9. Transient Thermal Response, Junction−to−Ambient, for NRVTSS5100E 100 50% Duty Cycle 20% R(t), (°C/W) 10 10% 5% 2% 1 0.1 0.0000001 1% 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 10. Transient Thermal Response, Junction−to−Ambient, for NRVTSAF5100E www.onsemi.com 4 100 1000 NRVTSS5100E, NRVTSAF5100E PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 NRVTSS5100E, NRVTSAF5100E PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b c D E E1 L D TOP VIEW A MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* c C SIDE VIEW SEATING PLANE 5.56 1.76 2X b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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