AVAGO AMMC-6222 7 to 21 ghz gaas high linearity low noise amplifier Datasheet

AMMC-6222
7 to 21 GHz GaAs High Linearity Low Noise Amplifier
Data Sheet
Description
Features
Avago Technologies AMMC-6222 is an easy-to-use
broadband, high gain, high linearity Low Noise Amplifier
that operates from 7 GHz to 21GHz. The wide band and
unconditionally stable performance makes this MMIC
ideal as a primary or sub-sequential low noise block or
a transmitter or LO driver. The MMIC has 3 gain stages
and requires a 4V, 120mA power supply for optimal
performance. It has a selectable pin to switch between
low and high current, corresponding with low and
high output power and linearity. DC-block capacitors
are integrated at the input and output stages. Since
this MMIC covers several bands, it can reduce part
inventory and increase volume purchase options The
MMIC is fabricated using PHEMT technology to provide
exceptional low noise, gain and power performance. The
backside of the chip is both RF and DC ground which
helps simplify the assembly process and reduce assembly
related performance variations and cost.
•
•
•
•
2000μm x 800μm Die Size
Single Positive Bias Supply
Selectable Output Power / Linearity
No Negative Gate Bias
Specifications (Vdd = 4.0V, Idd = 120mA)
•
•
•
•
•
RF Frequencies: 7 - 21 GHz
High Output IP3: 29dBm
High Small-Signal Gain: 25dB
Typical Noise Figure: 2.4dB
Input, Output Match: -10dB
Applications
•
•
•
•
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
• WLL and MMDS loops
• Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices.
Chip Size: 800 μm x 2000μm (31.5 x 78.74 mils)
Chip Size Tolerance: ±10 μm (±0.4 mils)
Chip Thickness: 100 ± 10 μm (4 ±0.4 mils)
Pad Dimensions: 100 x 100 μm (4 x 4 mils)
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (60V)
ESD Human Body Model (150V)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control
Absolute Maximum Ratings (1)
Parameters/Condition
Symbol
Unit
Max
Drain to Ground Voltage
Vdd
V
5.5
Gate-Drain Voltage
Vgd
V
-10
Drain Current
Idd
mA
170
RF CW Input Power Max
Pin
dBm
10
Max channel temperature
Tch
C
+150
Storage temperature
Tstg
C
-65 +150
Maximum Assembly Temp
Tmax
C
260 for 20s
(1) Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at
an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties (2)
Parameter and Test Condition
Symbol
Unit
Min
Typ
Max
Drain Supply Current under any RF power drive and temp. (Vd=4.0 V)
Idd
mA
80
120
160
Drain Supply Voltage
Vd
V
3
4
5
Thermal Resistance(3)
θjc
°C/W
31.4
(2) Ambient operational temperature TA=25°C unless noted
(3) Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25°C calculated from
measured data.
AMMC-6222 RF Specifications
TA= 25°C, Vdd = 4.0 V, Idd=120mA, Zo=50 W
Freq
High Output
Power Configuration
(GHz)
Min
Parameters and Test Conditions
Symbol
Unit
Drain Current
Idd
mA
Gain
dB
9, 12, 17
NF
dB
9
2.7
2.8
2.4
12
2.5
2.8
2.4
2.7
2.8
2.4
Small-Signal Gain[4]
Noise Figure into 50W
[4]
20
17
Output Power at 1dB Gain Compression
P-1dB
dBm
Output Third Order Intercept Point
OIP3
dBm
Isolation
Iso
Input Return Loss
Output Return Loss
Typical
Low Output
Power Configuration
Max
Min
Typical
120
95
26
24
13
15.5
15
26
28
27
dB
-50
-50
RLin
dB
-10
-10
RLout
dB
-10
-10
9, 12, 17
Max
(4) All tested parameters guaranteed with measurement accuracy ± 2dB for gain and P1dB, ±0.8dB for NF and ±5dBm for OPI3 in the high output power configuration.
Typical distribution of Gain, Noise Figure and P1dB based on 1500 parts
AMMC-6222 Typical Performance for High Current, High Output Power Configuration [1]
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, on-wafer unless noted)
30
5
Noise Figure (dB)
S21 (dB)
25
20
15
10
5
4
3
2
1
0
5
10
15
20
6
25
8
10 12
Frequency (GHz)
Figure 2a. Noise Figure
20
OP1dB (dBm)
0
S11 (dB)
-5
-10
-15
15
10
5
0
-20
5
10
15
20
6
25
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Figure 3a. Input Return Loss
Figure 4a. Output P-1dB
0
40
-5
30
OIP3 (dBm)
S22 (dB)
20 22
Frequency (GHz)
Figure 1a. Small-signal Gain
-10
-15
-20
20
10
0
-25
5
10
15
20
25
6
8
Figure 5a. Output Return Loss
Note:
[1] Noise Figure is measured with a 3-dB pad at input
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
14 16 18
Figure 6a. Output IP3
20
22
AMMC-6222 Typical Performance for High Current, High Output Power Configuration (Cont)
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, on-wafer unless noted)
150
-20
140
Idd (mA)
S12 (dB)
-30
-40
-50
130
120
110
100
-60
90
5
10
15
20
3
25
3.5
4
Frequency (GHz)
Figure 7a. Isolation
5
Noise Figure (dB)
S21 (dB)
25
20
15
4V
5V
10
3V
5
5
10
4
3
2
3V
4V
1
5V
0
15
20
6
25
8
Frequency (GHz)
14
16
18
-5
5V
-10
S22 (dB)
3V
-15
-15
-20
5V
3V
-30
10
15
20
Frequency (GHz)
Figure 11a. Input Return Loss Over Vdd
22
4V
-20
-25
5
20
0
4V
-10
12
Figure 10a. Noise Figure Over Vdd
0
-5
10
Frequency (GHz)
Figure 9a. Small-signal Gain Over Vdd
S11 (dB)
5
Figure 8a. Idd over Vdd
30
4.5
Vdd (V)
25
5
10
15
20
Frequency (GHz)
Figure 12a. Output Return Loss Over Vdd
25
AMMC-6222 Typical Performance for High Current, High Output Power Configuration (Cont)
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, on-wafer unless noted)
35
30
20
OIP3 (dBm)
OP1dB (dBm)
25
15
10
3V
4V
5V
5
8
10
12
14
16
18
20
20
15
3V
4V
5V
10
5
0
0
6
25
6
22
8
6
30
5
Noise Figure (dB)
S21 (dB)
35
25
25C
85C
10
-40C
5
18
20
22
-40C
25C
+85C
4
3
2
1
10
15
20
25
6
8
Figure 15a. Small-signal Gain Over Temp
-5
-5
S22 (dB)
0
-10
25C
-40C
-20
5
10
14
16
18
20
-15
25C
-20
85C
-40C
-30
15
20
Frequency (GHz)
Figure 17a. Input Return Loss Over Temp
22
-10
-25
85C
-25
12
Figure 16a. Noise Figure Over Temp
0
-15
10
Frequency (GHz)
Frequency (GHz)
S11 (dB)
16
0
5
14
Figure 14a. Output IP3 over Vdd
Figure 13a. Output P1dB over Vdd
15
12
Frequency (GHz)
Frequency (GHz)
20
10
25
5
10
15
20
Frequency (GHz)
Figure 18a. Output Return Loss Over Temp
25
AMMC-6222 Typical Performance for Low Current, Low Output Power Configuration [1]
(TA = 25°C, Vdd=4V, Idd=95mA, Zin = Zout = 50 W, on-wafer unless noted)
30
5
Noise Figure (dB)
S21 (dB)
25
20
15
10
4
3
2
1
5
0
5
10
15
20
25
6
8
10 12
Frequency (GHz)
Figure 2b. Noise Figure
0
18
OP1dB (dBm)
S11 (dB)
-5
-10
-15
15
12
9
6
3
0
-20
5
10
15
20
6
25
8
10 12
14
16
18 20
22
Frequency (GHz)
Frequency (GHz)
Figure 3b. Input Return Loss
Figure 4b. Output P-1dB
0
40
-5
30
OIP3 (dBm)
S22 (dB)
20 22
Frequency (GHz)
Figure 1b. Small-signal Gain
-10
-15
20
10
0
-20
5
10
15
20
25
6
8
Figure 5b. Output Return Loss
Note:
[1] Noise Figure is measured with a 3-dB pad at input
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
14 16 18
Figure 6b. Output IP3
AMMC-6222 Typical Performance for Low Current, Low Output Power Configuration (Cont)
(TA = 25°C, Vdd=4V, Idd=95mA, Zin = Zout = 50 W, on-wafer unless noted)
150
-20
130
Id d (m A )
S12 (dB)
-30
110
-40
-50
90
70
-60
50
5
10
15
20
25
3
3.5
4
Figure 7b. Isolation
Figure 8b. Idd over Vdd
5
Noise Figure (dB)
30
S21 (dB)
25
20
4V
15
5V
3V
10
4
3
2
3V
4V
1
5V
0
5
5
10
15
20
Frequency (GHz)
6
25
8
10
12
14
16
18
20
22
Frequency (GHz)
Figure 10b. Noise Figure Over Vdd
Figure 9b. Small-signal Gain Over Vdd
0
0
4V
-5
3V
-5
5V
S22 (dB)
S11 (dB)
5
Vdd (V)
Frequency (GHz)
-10
-15
-10
-15
4V
5V
-20
-20
5
10
15
20
Frequency (GHz)
Figure 11b. Input Return Loss Over Vdd
4.5
25
3V
-25
5
10
15
20
Frequency (GHz)
Figure 12b. Output Return Loss Over Vdd
25
AMMC-6222 Typical Performance for Low Current, Low Output Power Configuration (Cont)
(TA = 25°C, Vdd=4V, Idd=95mA, Zin = Zout = 50 W, on-wafer unless noted)
35
30
15
10
3V
4V
5V
5
OIP3 (dBm)
OP1dB (dBm)
20
25
20
15
3V
4V
5V
10
5
0
0
6
8
10
12
14
16
18
20
6
22
8
6
30
5
Noise Figure (dB)
S21 (dB)
35
25
25C
85C
10
-40C
5
10
15
20
18
20
22
-40C
25C
4
+85C
3
2
1
Frequency (GHz)
0
6
25
Figure 15b. Small-signal Gain Over Temp
10
12
14
16
18
20
22
Figure 16b. Noise Figure Over Temp
0
25C
-5
-40C
-5
8
Frequency (GHz)
85C
S22 (dB)
S11 (dB)
16
0
5
-10
-15
-10
-15
25C
85C
-20
-20
-40C
-25
5
10
15
20
Frequency (GHz)
Figure 17b. Input Return Loss Over Temp
14
Figure 14b. Output IP3 over Vdd
Figure 13b. Output P1dB over Vdd
15
12
Frequency (GHz)
Frequency (GHz)
20
10
25
5
10
15
20
Frequency (GHz)
Figure 18b. Output Return Loss Over Temp
25
AMMC-6222 Typical S-parameters for High Current, High Output Power Configuration
(TA = 25°C, Vdd=4V, Idd=120mA, Zin = Zout = 50 W, unless noted)
S11
Freq
Mag
dB
Phase
1.0
0.958
-0.369
-42.585
2.0
0.943
-0.511
-85.130
3.0
0.887
-1.043
-130.301
4.0
0.826
-1.662
-179.572
5.0
0.719
-2.870
116.375
6.0
0.656
-3.668
45.862
7.0
0.420
-7.537
-30.344
7.5
0.343
-9.301
-51.489
8.0
0.304
-10.335
-64.187
8.5
0.303
-10.381
-73.299
9.0
0.308
-10.222
-84.517
9.5
0.315
-10.039
-93.242
10.0
0.324
-9.788
-103.763
10.5
0.319
-9.930
-113.583
11.0
0.307
-10.269 -122.903
11.5
0.288
-10.809 -133.557
12.0
0.265
-11.537 -137.710
12.5
0.245
-12.211 -141.574
13.0
0.220
-13.136 -142.481
13.5
0.205
-13.764 -138.251
14.0
0.206
-13.712 -132.747
14.5
0.226
-12.908 -131.557
15.0
0.261
-11.657 -132.953
15.5
0.276
-11.181 -135.309
16.0
0.313
-10.101 -142.068
16.5
0.336
-9.482
-148.918
17.0
0.342
-9.317
-160.132
17.5
0.326
-9.744
-177.532
18.0
0.296
-10.585
167.220
18.5
0.233
-12.639
140.958
19.0
0.143
-16.874
97.489
19.5
0.141
-17.030
21.792
20.0
0.254
-11.903
-34.484
20.5
0.379
-8.437
-63.459
21.0
0.488
-6.234
-85.656
21.5
0.566
-4.951
-101.220
22.0
0.593
-4.540
-112.747
22.5
0.645
-3.815
-122.787
23.0
0.656
-3.656
-131.798
23.5
0.681
-3.339
-138.376
24.0
0.691
-3.216
-144.409
24.5
0.695
-3.158
-149.584
25.0
0.704
-3.049
-154.135
26.0
0.722
-2.825
-160.157
27.0
0.795
-1.996
-166.749
28.0
0.857
-1.337
-174.436
29.0
0.885
-1.059
176.306
30.0
0.905
-0.869
168.094
31.0
0.909
-0.833
160.078
32.0
0.918
-0.747
153.846
33.0
0.910
-0.821
148.083
34.0
0.910
-0.818
142.295
35.0
0.909
-0.828
137.375
36.0
0.921
-0.711
131.566
37.0
0.922
-0.704
126.811
38.0
0.937
-0.566
122.092
39.0
0.924
-0.690
118.056
40.0
0.942
-0.518
111.931
Note: S-parameters are measured on wafer.
Mag
0.025
0.010
0.003
0.053
4.719
15.381
18.583
18.736
18.763
18.899
19.030
19.114
19.083
19.224
19.221
19.292
19.363
19.463
19.556
19.673
19.794
19.869
19.871
19.851
19.991
20.247
20.408
20.916
21.356
21.803
21.721
20.980
19.075
16.444
13.851
11.582
9.807
8.561
7.385
6.505
5.863
5.317
4.876
4.092
3.116
2.113
1.300
0.738
0.364
0.158
0.059
0.023
0.001
0.001
0.001
0.011
0.005
0.001
S21
dB
-32.145
-40.003
-50.353
-25.575
13.478
23.740
25.382
25.453
25.466
25.529
25.589
25.627
25.613
25.677
25.676
25.708
25.740
25.784
25.825
25.878
25.931
25.964
25.965
25.956
26.017
26.127
26.196
26.410
26.590
26.770
26.737
26.436
25.609
24.320
22.829
21.276
19.831
18.650
17.367
16.265
15.362
14.514
13.762
12.239
9.872
6.497
2.276
-2.633
-8.780
-16.027
-24.624
-32.903
-58.256
-57.084
-57.443
-39.503
-45.942
-56.827
Phase
15.098
-72.011
74.224
-79.948
175.515
-1.209
-109.904
-150.670
173.863
142.049
112.342
84.660
58.470
33.313
9.250
-13.988
-36.291
-58.686
-80.428
-101.794
-122.955
-143.907
-164.915
174.722
153.950
133.650
112.800
91.502
68.726
45.177
19.448
-7.647
-34.822
-60.575
-84.844
-105.068
-123.629
-142.328
-160.169
-177.420
165.418
147.899
128.607
87.007
40.634
-5.679
-50.078
-93.382
-136.356
-169.736
161.165
155.942
-4.538
40.788
-159.263
-162.868
-142.066
178.467
Mag
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.002
0.001
0.001
0.001
0.003
0.005
0.002
0.002
0.004
0.003
0.003
0.001
0.003
0.008
0.002
0.003
0.004
0.004
0.004
0.007
0.003
0.002
0.009
0.006
0.012
0.009
0.003
0.006
0.006
0.010
0.004
0.006
0.006
0.008
0.008
0.008
0.008
0.006
0.003
0.005
0.005
0.005
0.004
0.004
0.003
0.006
0.007
0.005
0.005
0.010
0.004
S12
dB
-54.039
-54.714
-50.867
-49.320
-51.960
-50.074
-50.560
-54.592
-58.379
-59.185
-57.070
-49.818
-46.085
-53.291
-53.714
-48.760
-51.033
-49.131
-57.620
-50.277
-42.043
-56.446
-50.181
-47.466
-47.214
-47.034
-43.391
-49.606
-52.996
-41.185
-44.362
-38.649
-41.290
-49.931
-44.264
-44.104
-40.319
-47.699
-44.248
-44.247
-41.531
-41.678
-41.650
-41.764
-43.810
-49.131
-45.751
-46.303
-45.860
-48.671
-48.546
-49.944
-43.933
-43.392
-45.491
-46.741
-39.684
-47.008
Phase
160.951
-6.417
-171.915
-68.291
50.230
116.653
-175.569
-31.725
161.675
-169.981
-142.568
-154.952
155.948
158.396
140.482
78.912
107.309
152.693
-54.808
3.366
99.356
72.978
-120.805
106.783
51.139
6.950
23.918
-16.727
-21.233
-37.409
-74.167
-74.616
-120.892
-128.373
-142.938
179.334
163.488
90.728
-147.408
134.235
127.333
92.935
105.561
89.928
36.999
7.556
-10.362
12.057
-50.824
-2.151
-63.827
-48.678
116.000
-67.365
66.314
-87.366
-27.659
112.278
Mag
0.955
0.842
0.567
0.309
0.250
0.300
0.300
0.287
0.269
0.252
0.233
0.211
0.188
0.174
0.156
0.143
0.121
0.114
0.103
0.097
0.088
0.105
0.116
0.102
0.103
0.111
0.124
0.160
0.196
0.264
0.318
0.366
0.412
0.416
0.408
0.383
0.371
0.351
0.330
0.317
0.301
0.293
0.298
0.313
0.315
0.265
0.187
0.247
0.406
0.494
0.555
0.557
0.560
0.563
0.550
0.555
0.557
0.555
S22
dB
-0.396
-1.493
-4.929
-10.188
-12.034
-10.464
-10.464
-10.842
-11.404
-11.984
-12.655
-13.517
-14.529
-15.170
-16.115
-16.871
-18.374
-18.863
-19.712
-20.294
-21.159
-19.595
-18.680
-19.837
-19.759
-19.108
-18.161
-15.918
-14.164
-11.573
-9.952
-8.728
-7.692
-7.619
-7.782
-8.342
-8.623
-9.095
-9.637
-9.987
-10.422
-10.661
-10.503
-10.096
-10.031
-11.549
-14.567
-12.142
-7.822
-6.122
-5.118
-5.078
-5.033
-4.984
-5.196
-5.114
-5.091
-5.113
Phase
-45.564
-92.392
-136.051
-150.923
-143.827
-152.735
-170.564
-178.413
173.513
167.378
160.184
155.593
151.330
147.947
148.189
143.635
145.331
147.252
153.719
164.351
157.630
169.074
171.150
172.930
174.219
-174.350
-167.129
-166.639
-160.533
-169.415
-177.505
169.416
154.876
141.729
131.465
121.924
113.370
106.498
102.785
97.717
93.152
90.399
87.296
81.462
65.876
52.731
58.879
80.544
70.378
49.792
29.589
14.551
0.044
-13.521
-24.690
-36.643
-48.171
-57.836
AMMC-6222 Typical S-parameters for Low Current, Low Output Power Configuration
(TA = 25°C, Vdd=4V, Idd=95mA, Zin = Zout = 50 W, unless noted)
S11
Freq
Mag
dB
Phase
1.0
0.962
-0.335 -42.538
2.0
0.941
-0.527 -85.137
3.0
0.891
-1.003 -130.190
4.0
0.831
-1.608 -179.625
5.0
0.721
-2.836 116.552
6.0
0.654
-3.690
46.101
7.0
0.424
-7.461 -29.583
7.5
0.338
-9.414 -50.638
8.0
0.307
-10.270 -63.069
8.5
0.303
-10.380 -72.706
9.0
0.308
-10.225 -83.172
9.5
0.316
-10.014 -93.100
10.0
0.321
-9.859 -103.836
10.5
0.320
-9.904 -113.899
11.0
0.312
-10.127 -123.713
11.5
0.289
-10.771 -131.699
12.0
0.257
-11.785 -137.219
12.5
0.236
-12.541 -142.226
13.0
0.219
-13.202 -142.287
13.5
0.207
-13.667 -139.180
14.0
0.215
-13.352 -133.145
14.5
0.224
-12.985 -130.910
15.0
0.254
-11.911 -128.739
15.5
0.283
-10.967 -134.375
16.0
0.311
-10.146 -140.893
16.5
0.333
-9.548 -149.070
17.0
0.345
-9.247 -161.595
17.5
0.333
-9.553 -175.383
18.0
0.315
-10.035 169.381
18.5
0.237
-12.499 144.360
19.0
0.152
-16.345 107.475
19.5
0.129
-17.787 25.651
20.0
0.244
-12.246 -34.057
20.5
0.375
-8.528 -61.914
21.0
0.499
-6.029 -86.201
21.5
0.564
-4.967 -101.033
22.0
0.589
-4.604 -112.661
22.5
0.642
-3.843 -122.733
23.0
0.656
-3.656 -131.817
23.5
0.685
-3.285 -138.570
24.0
0.691
-3.216 -144.450
24.5
0.695
-3.165 -149.994
25.0
0.707
-3.014 -154.592
26.0
0.721
-2.838 -160.577
27.0
0.790
-2.048 -166.566
28.0
0.844
-1.475 -175.401
29.0
0.882
-1.090 175.982
30.0
0.900
-0.914 167.809
31.0
0.908
-0.837 159.901
32.0
0.917
-0.757 154.299
33.0
0.911
-0.813 147.702
34.0
0.912
-0.803 142.026
35.0
0.913
-0.795 136.930
36.0
0.918
-0.746 131.653
37.0
0.915
-0.769 126.060
38.0
0.934
-0.595 122.598
39.0
0.926
-0.666 117.822
40.0
0.942
-0.516 111.706
Note: S-parameters are measured on wafer.
10
Mag
0.025
0.012
0.002
0.052
4.287
14.129
17.103
17.206
17.251
17.351
17.456
17.542
17.551
17.670
17.640
17.744
17.779
17.849
17.945
18.006
18.094
18.118
18.139
18.169
18.317
18.592
18.720
19.262
19.750
20.221
20.264
19.801
18.151
15.744
13.273
11.064
9.349
8.149
7.033
6.187
5.556
5.041
4.618
3.856
2.943
1.995
1.236
0.709
0.352
0.151
0.061
0.021
0.001
0.010
0.006
0.008
0.008
0.004
S21
dB
-32.087
-38.676
-55.364
-25.681
12.642
23.002
24.661
24.714
24.736
24.787
24.839
24.882
24.886
24.945
24.930
24.981
24.998
25.032
25.079
25.109
25.150
25.162
25.172
25.186
25.257
25.387
25.446
25.694
25.911
26.116
26.135
25.934
25.178
23.943
22.459
20.878
19.415
18.222
16.942
15.829
14.895
14.050
13.290
11.724
9.376
5.999
1.839
-2.988
-9.068
-16.400
-24.234
-33.727
-57.168
-40.306
-44.992
-41.821
-41.834
-46.946
Phase
13.169
-75.007
105.291
-85.000
175.992
-0.999
-109.868
-150.741
173.812
141.969
112.316
84.762
58.569
33.331
9.278
-13.825
-36.099
-58.439
-80.117
-101.409
-122.564
-143.379
-164.060
175.628
155.106
134.914
114.240
93.283
70.555
47.222
21.779
-5.343
-32.721
-59.023
-83.955
-104.192
-122.851
-141.499
-159.419
-176.904
165.978
148.467
129.048
87.691
41.838
-4.502
-48.826
-92.320
-134.770
-170.422
162.859
148.879
147.445
160.921
-53.650
-59.627
-173.776
-142.305
Mag
0.003
0.001
0.004
0.003
0.002
0.001
0.000
0.003
0.002
0.003
0.001
0.002
0.002
0.001
0.003
0.002
0.004
0.006
0.004
0.002
0.002
0.004
0.006
0.002
0.009
0.003
0.006
0.005
0.007
0.007
0.006
0.007
0.006
0.005
0.004
0.004
0.008
0.008
0.006
0.009
0.006
0.005
0.008
0.008
0.006
0.006
0.004
0.004
0.005
0.005
0.006
0.007
0.004
0.002
0.006
0.002
0.003
0.004
S12
dB
-50.752
-57.595
-48.792
-50.122
-53.846
-56.923
-73.579
-51.024
-53.734
-50.710
-57.257
-55.035
-56.389
-58.861
-50.616
-56.138
-47.331
-44.798
-48.317
-54.607
-54.422
-47.218
-44.923
-52.813
-40.453
-49.122
-44.063
-46.681
-42.547
-42.627
-44.194
-43.522
-44.462
-45.997
-48.131
-49.093
-42.056
-42.454
-44.841
-41.119
-44.031
-46.248
-41.965
-41.539
-44.504
-44.247
-47.299
-47.858
-46.229
-46.661
-44.888
-42.683
-47.125
-52.995
-44.896
-53.072
-49.402
-48.157
Phase
-174.263
157.515
31.277
-173.499
105.846
-101.206
-19.666
-91.770
141.876
-160.705
-102.126
-146.430
92.603
123.654
99.152
96.394
46.111
84.320
49.303
8.850
-32.746
104.834
3.838
49.948
42.270
30.790
-32.075
-6.002
15.335
-43.074
-44.587
-73.089
-137.245
-120.749
65.659
140.120
-162.159
-147.348
155.781
124.778
128.276
112.911
118.649
53.291
40.248
-18.090
-17.422
16.674
-4.192
87.363
4.876
-36.025
8.635
156.837
-80.908
-63.060
-109.021
-95.137
Mag
0.951
0.840
0.564
0.307
0.249
0.299
0.301
0.292
0.270
0.256
0.240
0.220
0.207
0.193
0.183
0.162
0.147
0.140
0.138
0.139
0.146
0.147
0.151
0.150
0.137
0.153
0.169
0.191
0.234
0.279
0.346
0.400
0.446
0.453
0.429
0.414
0.417
0.390
0.374
0.359
0.340
0.336
0.337
0.349
0.346
0.307
0.228
0.265
0.407
0.499
0.558
0.568
0.559
0.573
0.568
0.568
0.566
0.574
S22
dB
-0.436
-1.513
-4.967
-10.255
-12.087
-10.484
-10.437
-10.680
-11.360
-11.821
-12.390
-13.145
-13.663
-14.288
-14.751
-15.819
-16.653
-17.057
-17.232
-17.119
-16.728
-16.625
-16.419
-16.470
-17.279
-16.332
-15.436
-14.363
-12.631
-11.089
-9.207
-7.958
-7.015
-6.882
-7.357
-7.660
-7.596
-8.180
-8.535
-8.894
-9.361
-9.486
-9.442
-9.138
-9.216
-10.245
-12.833
-11.542
-7.798
-6.032
-5.068
-4.921
-5.052
-4.829
-4.920
-4.906
-4.945
-4.823
Phase
-45.616
-91.967
-135.409
-149.880
-141.969
-149.268
-165.184
-173.367
179.478
174.288
168.073
164.231
162.236
158.893
157.301
157.504
156.676
157.174
161.962
166.776
168.536
167.871
171.426
169.847
165.829
173.852
176.457
-178.727
-174.029
-179.874
174.465
162.697
148.464
137.895
125.124
117.781
108.351
102.329
97.683
92.576
89.423
86.583
82.386
75.159
60.597
47.676
49.752
66.161
60.434
42.716
24.243
10.668
-3.636
-16.469
-27.330
-38.013
-48.328
-58.602
AMMC-6222 Application and Usage
Biasing and Operation
To VDD DC supply
>= 100 pF Capacitor
VD1
RF INPUT
VD2
RF OUTPUT
AMMC-6222
Open
For receiver front end low noise applications where high
power and linearity are not often required, the AMMC6222 can be set in low current state when SELECT pad
is open as shown in Figure 19. In this configuration, the
bias current is approximately 85mA, 95mA and 105mA
for 3V, 4V and 5V respectively.
Gold Plated Shim (Optional)
Figure 19. Low Current, Low Output Power State
To VDD DC supply
>= 100 pF Capacitor
VD1
RF INPUT
VD2
AMMC-6222
Gold Plated Shim (Optional)
Figure 20. High Current, High Output Power State
The AMMC-6222 is normally biased with a positive drain
supply connected to the VD1 and VD2 pads through
bypass capacitor as shown in Figures 19 and 20. The
recommended drain supply voltage for general usage is
4V and the corresponding drain current is approximately
120mA. It is important to have at least 100pF bypass
capacitor and the capacitor should be placed as close
to the component as possible. Aspects of the amplifier
performance may be improved over a narrower
bandwidth by application of additional conjugate,
linearity, or low noise (Topt) matching.
RF OUTPUT
In applications where high output power and linearity
are often required such as LO or transmitter drivers, the
AMMC-6222 can be selected to operate at its highest
output power by grounding SELECT pad as shown in
Figure 20. At 5V, the amplifier can provide Psat of about
20dBm. The bias current in this configuration is 115mA,
120mA and 125mA for 3V, 4V and 5V respectively.
In both cases, bonding wires at the input and output in
the range of 0.15nH would likely improve the overall Noise
Figure and input, output match at most frequencies.
No ground wires are needed because all ground
connections are made with plated through-holes to the
backside of the substrate.
Refer the Absolute Maximum Ratings table for allowed
DC and thermal condition.
Figure 21. Simplified High Linearity LNA Schematic
11
Assembly Techniques
The backside of the MMIC chip is RF ground. For microstrip
applications the chip should be attached directly to
the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1]
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding it.
This can be accomplished by mounting a gold plated metal
shim (same length as the MMIC) under the chip which is of
correct thickness to make the chip and adjacent circuit the
same height. The amount of epoxy used for the chip or
shim attachment should be just enough to provide a thin
fillet around the bottom perimeter of the chip. The ground
plane should be free of any residue that may jeopardize
electrical or mechanical attachment.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally sufficient
for signal connections, however double bonding with
0.7mil gold wire will reduce series inductance. Gold
thermo-sonic wedge bonding is the preferred method for
wire attachment to the bond pads. The recommended wire
bond stage temperature is 150°c ± 2°c.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100um thick and should be handled with care.
This MMIC has exposed air bridges on the top surface and
should be handled by the edges or with a custom collet (do
not pick up the die with a vacuum on die center). Bonding
pads and chip backside metallization are gold.
This MMIC is also static sensitive and ESD precautions
should be taken
For more detailed information see Avago Technolgies’
application note #54 “GaAs MMIC assembly and handling
guidelines”
Notes:
[1] Ablebond 84-1 LMI silver epoxy is recommended
Ordering Information:
AMMC-6222-W10 = 10 devices per tray
AMMC-6222-W50 = 50 devices per tray
VD1
800
0
680
VD2
800
1280
2000
1400
800
650
390
390
RFin
RFout
250
250
0
0
0
130
1610
1740
SELECT
Figure 22. Bond Pad Locations
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Limited. All rights reserved.
AV01-0439EN - November 24, 2006