BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) 2 1 Type Marking Pin Configuration BCW 61A BAs 1=B 2=E 3=C SOT23 BCW 61B BBs 1=B 2=E 3=C SOT23 BCW 61C BCs 1=B 2=E 3=C SOT23 BCW 61D BDs 1=B 2=E 3=C SOT23 BCW 61FF BFs 1=B 2=E 3=C SOT23 BCW 61FN BNs 1=B 2=E 3=C SOT23 BCX 71G BGs 1=B 2=E 3=C SOT23 BCX 71H BHs 1=B 2=E 3=C SOT23 BCX 71J BJs 1=B 2=E 3=C SOT23 BCX 71K BKs 1=B 2=E 3=C SOT23 1 VPS05161 Package Jul-10-2001 BCW61, BCX71 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 32 32 45 Collector-base voltage VCBO 32 32 45 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg BCW61 BCW61FF BCX71 Unit V -65 ... 150 Thermal Resistance Junction - soldering point1) 240 RthJS K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW61/61FF 32 - - BCX71 45 - - BCW61/61FF 32 - - BCX71 45 - - 5 - - Collector-base breakdown voltage IC = 10 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jul-10-2001 BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. AC Characteristics Collector cutoff current nA ICBO VCB = 32 V, IE = 0 BCW61/61FF - - 20 VCB = 45 V, IE = 0 BCX71 - - 20 Collector cutoff current µA ICBO VCB = 32 V, IE = 0 , TA = 150 °C BCW61/61FF VCB = 45 V, IE = 0 , TA = 150 °C BCX71 Emitter cutoff current IEBO - - 20 - - 20 - - 20 nA VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 5 V hFE-grp. A/G 20 140 - hFE-grp. B/H 30 200 - hFE-grp. C/J/FF 40 300 - hFE-grp. D/K/FN 100 460 - hFE-grp. A/G 120 170 220 hFE-grp. B/H 180 250 310 hFE-grp. C/J/FF 250 350 460 hFE-grp. D/K/FN 380 500 630 hFE-grp. A/G 60 - - hFE-grp. B/H 80 - - hFE-grp. C/J/FF 100 - - hFE-grp. D/K/FN 110 - - DC current gain 1) IC = 2 mA, VCE = 5 V hFE DC current gain 1) IC = 50 mA, VCE = 1 V - hFE hFE 1) Pulse test: t ≤=300µs, D = 2% 3 Jul-10-2001 BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 0.25 mA - 0.12 0.25 IC = 50 mA, IB = 1.25 mA - 0.2 0.55 IC = 10 mA, IB = 0.25 mA - 0.7 0.85 IC = 50 mA, IB = 1.25 mA - 0.83 1.05 IC = 10 µA, VCE = 5 V - 0.52 - IC = 2 mA, VCE = 5 V 0.55 0.65 0.75 IC = 50 mA, VCE = 1 V - 0.78 - fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz k Short-circuit input impedance hFE-grp. h11e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G - 2.7 - B/H - 3.6 - C/J/FF - 4.5 - D/K/FN - 7.5 - Open-circuit reverse voltage transf.ratio hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G 10-4 - 1.5 - B/H - 2 - C/J/FF - 2 - D/K/FN - 3 - 1) Pulse test: t ≤=300µs, D = 2% 4 Jul-10-2001 BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. AC Characteristics Short-circuit forward current transf.ratio hFE-grp. h21e A/G IC = 2 mA, VCE = 5 V, f = 1 kHz - 200 - B/H - 260 - C/J/FF - 330 - D/K/FN - 520 - S Open-circuit output admittance hFE-grp. h22e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G - 18 - B/H - 24 - C/J/FF - 30 - D/K/FN - 50 - Noise figure dB hFE-grp. F IC = 200 µA, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz A/K - 2 - FF/FN - 1 2 hFE-grp. Vn - - 0.11 µV FF/FN 5 Jul-10-2001 BCW61, BCX71 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 12 360 BCW 61/BCX 71 EHP00344 CCBO pF (C EBO) mW 10 300 P tot 270 8 240 CEBO 210 6 180 150 4 120 CCBO 90 2 60 30 0 0 15 30 45 60 75 90 105 120 0 10 -1 °C 150 TS 10 1 V CBO (V EBO ) 10 0 V Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCW 61/BCX 71 EHP00345 Ptot max 5 Ptot DC 10 3 tp tp D= T fT BCW 61/BCX 71 EHP00347 MHz 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 10 3 ΙC tp 6 Jul-10-2001 BCW61, BCX71 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 40 IC = f (VCEsat), h FE = 40 10 2 ΙC BCW 61/BCX 71 EHP00348 10 2 mA ΙC 100 ˚C 25 ˚C -50 ˚C 10 1 10 0 10 0 5 5 0.2 0.4 100 ˚C 25 ˚C -50 ˚C 10 1 5 0 EHP00349 mA 5 10 -1 BCW 61/BCX 71 0.6 0.8 V 10 -1 1.2 0.1 0 0.2 0.3 V BE sat DC current gain hFE = f (I C) VCE = 5V VCE = 5V BCW 61/BCX 71 V 0.5 V CEsat Collector current IC = f (VBE) 10 2 0.4 10 3 EHP00350 Ι C mA h FE 5 BCW 61/BCX 71 EHP00351 100 ˚C 25 ˚C 10 1 10 2 5 -50 ˚C 5 10 0 5 10 1 100 ˚C 10 -1 25 ˚C -50 ˚C 5 5 10 -2 0 0.5 V 10 0 10 -2 1.0 10 -1 10 0 10 1 mA 10 2 ΙC V BE 7 Jul-10-2001 BCW61, BCX71 Collector cutoff current ICBO = f (TA) h parameter he = f (IC) normalized VCB = VCEmax VCE = 5V BCW 61/BCX 71 10 4 nA EHP00352 Ι CBO 10 2 BCW 61/BCX 71 EHP00353 he 10 3 10 max 10 2 1 V CE = 5 V h 11e 5 10 1 h 12e 10 5 typ 10 0 0 h 21e h 22e 10 -1 0 50 100 C 10 150 -1 10 -1 5 10 0 mA ΙC TA h parameter he = f (VCE ) normalized Noise figure F = f (V CE) IC = 0.2mA, R S = 2k, f = 1kHz IC = 2mA 2.0 BCW 61/BCX 71 he EHP00354 Ι C = 2 mA 20 F BCW 61/BCX 71 EHP00355 dB h 11 1.5 15 1.0 10 h 12 h 22 0.5 0 10 1 5 0 10 20 V 0 10 -1 30 VCE 10 0 10 1 V 10 2 VCE 8 Jul-10-2001 BCW61, BCX71 Noise figure F = f (f) Noise figure F = f (IC) IC = 0.2mA, VCE = 5V, RS = 2k 20 F BCW 61/BCX 71 VCE = 5V, f = 120Hz EHP00356 20 dB F BCW 61/BCX 71 EHP00357 dB 15 15 10 10 RS = 1 MΩ 100 k Ω 10 k Ω 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 f 10 -2 10 -1 ΙC Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 5V, f = 1kHz VCE = 5V, f = 10kHz 20 F BCW 61/BCX 71 EHP00358 20 dB F 15 BCW 61/BCX 71 EHP00359 dB RS = 1 MΩ 15 RS = 1 MΩ 100 k Ω 10 kΩ 100 k Ω 10 10 10 k Ω 500 Ω 1k Ω 5 5 1 kΩ 500 Ω 0 10 -3 mA 10 1 10 0 10 -2 10 -1 0 10 -3 mA 10 1 10 0 ΙC 10 -2 10 -1 mA 10 1 10 0 ΙC 9 Jul-10-2001