Yea Shin E1E Surface mount superfast rectifier voltage - 50 to 600 volts current - 1.0 ampere Datasheet

DATA SHEET
E1A THRU E1J
SEMICONDUCTOR
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
SMF Unit: inch ( mm )
FEATURES
0.195 (0.9)typical
•For surface mounted applications
•Low profile package
•Built-in strain relief
•Easy pick and place
•Superfast recovery times for high efficiency
(0.189)4.8
•Plastic package has Underwriters Laboratory
(0.173)4.4
Flammability Classification 94V-O
5
•Glass passivated junction
0.22
0.15
•High temperature soldering:
(0.052)1.3
(0.043)1.1
260 OC / 10 seconds at terminals
•High temperature soldering : 260OC / 10 seconds at terminals
Z
5
•Pb free product at available : 99% Sn above meet RoHS
Cathode Band
Top View
Detail Z
enlarged
environment substance directive request
0.110(2.8)
0.095(2.4)
MECHANICAL DATA
1.43
1.38
0.10 max
•Case: JEDEC DO-214AC molded plastic
•Terminals: Solder plated, solderable per
3.6
3.2
MIL-STD-750, Method 2026
•Polarity: Indicated by cathode band
•Standard packaging: 12mm tape (EIA-481)
•Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave 60Hz resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
E1A
E1B
E1C
E1D
E1E
E1G
E1J
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
600
Volts
Maximum Average Forward Rectified Current,
Volts
at TL=120℃
Peak Forward Surge Current 8.3ms single half
sinewave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current TA=25 OC
At Rated DC Blocking Voltage TA=100 OC
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
IFSM
VF
1.0
Amps
30.0
Amps
0.95
1.25
1.7
Volts
5.0
IR
uA
100
TRR
35.0
Cj
10.0
Typical Thermal Resistance (Note 3)
RθJA
35
Operating and Storage Temperature Range
TSTG
-55to +150
nS
pF
O
C /W
O
C
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
E1A THRU E1J
trr
AVERAGE FORWARD
CURRENT AMPERES
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
2.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
25
1cm
50
75
100 125 150 175
LEAD TEMPERATURE, ¢J
50 ns/cm
1000
100
TJ = 125 ¢J
10
TJ = 75¢J
1
TJ = 25¢J
0.1
20
40
60
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
10
INSTANTANEOUS FORWARD CURRENT AMPERES
IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
80
100
E1A
1
E1E
E1J
0.1
T J = 25 ¢J
0.01
0.001
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
14
30
JUNCTION CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT, AMPERES
% OF PIV. VOLTS
25
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
20
15
10
5
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
10
TJ = 25¢J
f = 1.0MHz
Vsig = 50mVp-p
8.0
6.0
4.0
2.0
.1
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
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12
Fig. 6-TYPICAL JUNCTION CAPACITANCE
2
REV.02 20110725
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