DATA SHEET E1A THRU E1J SEMICONDUCTOR SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere SMF Unit: inch ( mm ) FEATURES 0.195 (0.9)typical •For surface mounted applications •Low profile package •Built-in strain relief •Easy pick and place •Superfast recovery times for high efficiency (0.189)4.8 •Plastic package has Underwriters Laboratory (0.173)4.4 Flammability Classification 94V-O 5 •Glass passivated junction 0.22 0.15 •High temperature soldering: (0.052)1.3 (0.043)1.1 260 OC / 10 seconds at terminals •High temperature soldering : 260OC / 10 seconds at terminals Z 5 •Pb free product at available : 99% Sn above meet RoHS Cathode Band Top View Detail Z enlarged environment substance directive request 0.110(2.8) 0.095(2.4) MECHANICAL DATA 1.43 1.38 0.10 max •Case: JEDEC DO-214AC molded plastic •Terminals: Solder plated, solderable per 3.6 3.2 MIL-STD-750, Method 2026 •Polarity: Indicated by cathode band •Standard packaging: 12mm tape (EIA-481) •Weight: 0.002 ounce, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave 60Hz resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS E1A E1B E1C E1D E1E E1G E1J UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current, Volts at TL=120℃ Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current TA=25 OC At Rated DC Blocking Voltage TA=100 OC Maximum Reverse Recovery Time (Note 1) Typical Junction capacitance (Note 2) IFSM VF 1.0 Amps 30.0 Amps 0.95 1.25 1.7 Volts 5.0 IR uA 100 TRR 35.0 Cj 10.0 Typical Thermal Resistance (Note 3) RθJA 35 Operating and Storage Temperature Range TSTG -55to +150 nS pF O C /W O C NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES E1A THRU E1J trr AVERAGE FORWARD CURRENT AMPERES +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 2.0 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 25 1cm 50 75 100 125 150 175 LEAD TEMPERATURE, ¢J 50 ns/cm 1000 100 TJ = 125 ¢J 10 TJ = 75¢J 1 TJ = 25¢J 0.1 20 40 60 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 10 INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT, MICROAMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 80 100 E1A 1 E1E E1J 0.1 T J = 25 ¢J 0.01 0.001 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 14 30 JUNCTION CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES % OF PIV. VOLTS 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 10 TJ = 25¢J f = 1.0MHz Vsig = 50mVp-p 8.0 6.0 4.0 2.0 .1 1 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT http://www.yeashin.com 12 Fig. 6-TYPICAL JUNCTION CAPACITANCE 2 REV.02 20110725