Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 1/11 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE5D0N10RH8 100V 60A 13.4A 6mΩ(typ) BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline MTE5D0N10RH8 DFN5×6 Pin 1 D D D D D D S D G S S S S G：Gate D：Drain S：Source D G S Pin 1 Ordering Information Device MTE5D0N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE5D0N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 2/11 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=40A, VDD=50V TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ VDS VGS ID IDSM IDM IAS EAS PD PDSM Operating Junction and Storage Temperature Range Tj, Tstg Limits Unit 100 ±20 60 38 13.4 *3 10.7 *3 195 *1,2 80 800 50 20 2.5 *3 1.6 *3 -55~+150 V A mJ W °C 100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=50A, Rated VDS=100V N-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 2.5 50 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) Dynamic Ciss Coss Crss *1 MTE5D0N10RH8 Min. Typ. Max. 100 2 - 30.9 6 4 ±100 1 5 8.2 - 4829 504 22 - Unit Test Conditions mΩ VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±20V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55°C VGS =10V, ID=30A pF VDS=50V, VGS=0V, f=1MHz V S nA μA CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 3/11 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 66.7 21 13 33.6 20.4 63.2 13 2.1 Max. - - 0.81 45.9 87.8 40 160 1.2 - Unit Test Conditions nC VDS=80V, VGS=10V, ID=30A ns VDS=50V, ID=30A, VGS=10V, RGS=1Ω Ω f=1MHz A V ns nC IS=20A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTE5D0N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 4/11 Recommended Soldering Footprint & Stencil Design unit : mm MTE5D0N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 5/11 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 180 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 160 6V 140 120 10V,9V,8V,7V 100 5V 80 60 4.5V 40 20 VGS=4V 0 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 10 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 20 18 ID=30A R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 2 16 14 12 10 8 6 4 2 2 VGS=10V, ID=30A RDSON@Tj=25°C : 6mΩ typ. 1.6 1.2 0.8 0.4 0 0 0 MTE5D0N10RH8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 6/11 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.6 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 -50 -25 50 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=20V, 50V, 80V from left to right VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=15V 0.1 Pulsed Ta=25°C 8 6 4 2 ID=30A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 16 24 32 40 48 56 Qg, Total Gate Charge(nC) 64 72 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 15 ID, Maximum Drain Current(A) 1000 RDS(ON) Limited 100 ID, Drain Current(A) 8 10 100μs 1ms 10ms 1 TA=25°C, Tj=150°C, VGS=10V RθJA =50°C/W, Single Pulse 0.1 100ms 1s DC MTE5D0N10RH8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 9 6 3 TA=25°C, VGS=10V, RθJA =50°C/W Single Pulse 0 0.01 0.01 12 1000 25 50 75 100 125 150 Tj, Junctione Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 7/11 Typical Characteristics(Cont.) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 80 1000 ID, Maximum Drain Current(A) ID, Drain Current(A) RDS(ON) Limited 100 100μs 10 1ms 10ms 1 TC=25°C, Tj=150°C, VGS=10V RθJC=2.5°C/W, Single Pulse 100ms DC 70 60 50 40 30 20 VGS=10V, RθJC=2.5°C/W 10 0 0.1 0.1 1 10 100 VDS, Drain-Source Voltage(V) 25 1000 Typical Transfer Characteristics 180 300 160 VDS=10V Power (W) 120 100 80 75 100 125 TC , Case Temperature(°C) 150 175 Single Pulse Power Rating, Junction to Ambient (Note on page 2) TJ(MAX) =150°C TA=25°C RθJA =50°C/W 250 140 ID, Drain Current (A) 50 200 150 100 60 40 50 20 0 0.0001 0 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage(V) 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Single Pulse Maximum Power Dissipation 600 Power (W) 500 TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W 400 300 200 100 0 0.0001 0.001 MTE5D0N10RH8 0.01 0.1 Pulse Width(s) 1 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 8/11 Typical Characteristics(Cont.) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5 °C/W 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50 °C/W 0.05 0.02 0.01 0.01 0.001 1.E-04 MTE5D0N10RH8 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 9/11 Reel Dimension Carrier Tape Dimension MTE5D0N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 10/11 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE5D0N10RH8 CYStek Product Specification Spec. No. : C029H8 Issued Date : 2017.11.15 Revised Date : 2017.11.16 Page No. : 11/11 CYStech Electronics Corp. DFN5×6 Dimension Marking: Device Name E5D0 N10R Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.90 1.10 0.00 0.05 0.33 0.51 0.20 0.30 4.80 5.00 3.61 3.96 5.90 6.10 5.70 5.80 DIM A A1 b C D1 D2 E E1 Inches Min. Max. 0.035 0.043 0.000 0.002 0.013 0.020 0.008 0.012 0.189 0.197 0.142 0.156 0.232 0.240 0.224 0.228 DIM E2 e H K L L1 θ Millimeters Min. Max. 3.38 3.78 1.27 BSC 0.41 0.61 1.10 0.51 0.71 0.06 0.20 8° 12° Inches Min. Max. 0.133 0.149 0.050 BSC 0.016 0.024 0.043 0.020 0.028 0.002 0.008 8° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE5D0N10RH8 CYStek Product Specification