BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 Gate-to-Source Voltage VGSS ±30 V Limited only by maximum temperature Tch=150°C 14 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 9.6 A IDP PW≤10μs, duty cycle≤1% 50 A 2.0 W IDc*1 Drain Current (DC) Drain Current (Pulse) V Allowable Power Dissipation PD 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 122 mJ 14 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=1mH, IAV=14A (Fig.1) *5 L≤1mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7509-002 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 FL4036 0.6 16.1 16.0 2 LOT No. 0.75 2.4 1 2 3 2.55 1 1.2 14.0 3.6 0.9 1.2 2.55 0.7 1 : Gate 2 : Drain 3 : Source 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 90810QB TK IM TC-00002470 No. A1830-1/5 BFL4036 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 500 V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±24V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=7A Static Drain-to-Source On-State Resistance RDS(on) ID=7A, VGS=10V Input Capacitance Ciss VDS=30V, f=1MHz 1000 pF Output Capacitance Coss VDS=30V, f=1MHz 200 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 44 pF Turn-ON Delay Time td(on) See Fig.2 22 ns Rise Time tr td(off) See Fig.2 66 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge μA 5 3.5 7 V S 0.4 0.52 Ω 117 46 ns VDS=200V, VGS=10V, ID=14A 38.4 nC VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A 6.7 nC 22.1 nC Qgs Diode Forward Voltage VSD trr Qrr IS=14A, VGS=0V See Fig.3 0.95 520 ns IS=14A, VGS=0V, di/dt=100A/μs 4200 nC Fig.1 Avalanche Resistance Test Circuit D 1.3 V Fig.2 Switching Time Test Circuit 10V 0V L ≥50Ω RG VDD=200V VIN ID=7A RL=28.6Ω VIN G BFL4036 S 50Ω ±10 3 See Fig.2 Qgd 10V 0V μA See Fig.2 Gate-to-Source Charge Reverse Recovery Charge 100 tf Qg Gate-to-Drain “Miller” Charge Reverse Recovery Time ID=10mA, VGS=0V VDS=400V, VGS=0V V Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current VDD D PW=10μs D.C.≤0.5% VOUT G BFL4036 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Test Circuit BFL4036 D 500μH G S VDD=50V Driver MOSFET No. A1830-2/5 BFL4036 ID -- VDS 40 ID -- VGS 40 Tc=25°C 15V 35 10V 30 8V 25 Tc= --25°C 35 Drain Current, ID -- A Drain Current, ID -- A VDS=20V 20 15 10 25°C 30 25 75°C 20 15 10 6V 5 0 5 VGS=5V 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V IT11720 RDS(on) -- VGS 1.4 0 30 RDS(on) -- Tc 1.2 20 IT11721 1.0 0.8 Tc=75°C 25°C 0.4 --25°C 0.2 0 3 5 7 9 11 13 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 3 = Tc 2 5°C --2 °C 75 1.00E+00 7 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 75 100 125 150 IT11723 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 1.4 IT11725 f=1MHz 3 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 50 10 7 5 0.01 0.2 3 VDD=200V VGS=10V 7 25 IS -- VSD IT11724 SW Time -- ID 1000 0 VGS=0V 3 2 5 3 0.1 --25 Case Temperature, Tc -- °C Source Current, IS -- A 5 0.2 3 2 °C 25 7 0.4 5 1.00E+01 , VG A =7 ID 0 --50 15 VDS=10V 2 0V 1 S= 0.6 IT11722 | yfs | -- ID 3 0.8 Tc=7 5°C 0.6 1.0 25°C --25°C 1.2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=7A td (off) 100 7 tf tr 5 3 td(on) 2 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT11726 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11727 No. A1830-3/5 BFL4036 VGS -- Qg 10 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 10 0 20 30 40 Total Gate Charge, Qg -- nC 1.0 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT11730 EAS -- Ta 120 DC 1.0 7 5 3 2 ms 10 s 0m s op era tio Operation in this area is limited by RDS(on). 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 0.1 2 3 5 7 1.0 1m 10 IDpack(*2)=9.6A n *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.5 20 10 7 5 3 2 10 μs 0μ s 10 IDc(*1)=14A PD -- Tc 40 2.0 0 IDP=50A (PW≤10μs) IT11728 PD -- Ta 2.5 0 ASO 2 VDS=200V ID=14A 2 3 5 7 IT15943 37 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11731 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1830-4/5 BFL4036 Note on usage : Since the BFL4036 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2010. Specifications and information herein are subject to change without notice. PS No. A1830-5/5