AP6800GEO
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
▼ Capable of 2.5V gate drive
D2
▼ Optimal DC/DC battery application
S2
S1
TSSOP-8
G1
S1
BVDSS
20V
RDS(ON)
20mΩ
ID
D1
6
▼ RoHS compliant
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±10
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
6.0
A
ID@TA=70℃
3
4.7
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
1
W
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
200109061-1/4
AP6800GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/℃
VGS=4.5V, ID=6A
-
-
20
mΩ
VGS=4V, ID=4A
-
-
21
mΩ
VGS=2.5V, ID=2A
-
-
25
mΩ
0.5
-
1.2
V
-
6
-
S
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=6A
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±10V
-
-
±30
uA
ID=6A
-
23.4
37
nC
VGS(th)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11.1
-
nC
VDS=10V
-
8.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
18.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
19.6
-
ns
tf
Fall Time
RD=10Ω
-
58
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=20V
-
315
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
Typ.
IS=0.84A, VGS=0V
Test Conditions
-
-
Max. Units
1.2
V
IS=6A, VGS=0V,
-
40
-
ns
dI/dt=100A/µs
-
39
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
2/4
AP6800GEO
40
40
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
30
V G =2.0V
20
4.5V
3.5V
3.0V
2.5V
o
4.5V
3.5V
3.0V
2.5V
T A =25 C
10
30
V G =2.0V
20
10
0
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
70
I D = 4A
I D = 6A
V G = 4.5V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
1.5
40
1.1
0.7
0.3
10
0
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
5
1.6
4
1.2
o
T j =150 C
T j =25 C
IS (A)
3
VGS(th) (V)
o
0.8
2
0.4
1
200109061-1/4
0
0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP6800GEO
f=1.0MHz
12
10000
ID=6A
V DS =10V
V DS =12V
V DS =15V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
1000
C iss
4
C oss
2
C rss
0
100
0
5
10
15
20
25
30
35
40
45
1
50
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor = 0.5
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
70
VG
V DS = 5V
60
QG
ID , Drain Current (A)
50
T j =25 o C
5V
T j =150 o C
40
QGS
QGD
30
20
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4