Thinki MBR30150PTR 30 amperes heat sink dual common anode schottky half bridge rectifier Datasheet

®
MBR3035PTR thru MBR30200PTR
Pb Free Plating Product
Pb
MBR3035PTR thru MBR30200PTR
30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
TO-3PN/TO-3PB
Features
Standard MBR matured technology with high reliablity
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Bottom Side Metal Heat Sink
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-3PN/TO-3PB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 6.5 gram approximately
Case
Case
Case
Case
Series
Doubler
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "PTS"
Suffix "PTR"
Suffix "PTD"
Suffix "PT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
MBR
MBR
MBR
MBR
MBR
SYMBOL 3035
MBR
MBR
MBR
3045
3050
3060
3090 30100 30150 30200
PTR
PTR
PTR
PTR
PTR
PTR
PTR
PTR
100
150
200
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
140
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
200
V
Maximum average forward rectified current
IF(AV)
30
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
30
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse surge Current (Note 1)
IRRM
2
-
0.75
0.85
0.95
VF
0.60
0.65
0.75
0.92
-
0.82
-
-
1.02
1.10
-
-
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
IF=15A, TJ=125℃
IF=30A, TJ=25℃
IF=30A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
1
0.73
IR
1
20
A
0.98
0.5
15
V
1.05
0.1
10
V
mA
Voltage rate of change,(Rated VR)
dV/dt
10,000
V/μs
Typical thermal resistance
RθJC
1.4
TJ
- 55 to +150
℃/W
℃
TSTG
- 55 to +150
℃
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
®
MBR3035PTR thru MBR30200PTR
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
PEAK FORWARD SURGE CURRENT (A)
35
AVERAGE FORWARD A
CURRENT (A)
30
25
20
15
10
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
5
0
0
25
50
75
100
125
150
225
8.3ms Single Half Sine Wave
JEDEC Method
200
175
150
125
100
75
50
25
0
1
10
CASE TEMPERATURE (℃)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
TJ=125℃
TJ=125℃
10
TJ=25℃
1
0.1
MBR3035PTR-MBR3045PTR
MBR3050PTR-MBR3060PTR
MBR3090PTR-MBR30200PTR
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
10
REVERSE LEAKAGE CURRENT (mA)
FORWARD CURRENT (A)
100
1
0.1
TJ=25℃
0.01
1.1 1.2
0
MBR3050PTR-MBR3060PTR
MBR3090PTR-MBR30200PTR
100
10
REVERSE VOLTAGE (V)
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
100
TRANSIENT THERMAL IMPEDANCE(℃/W)
JUNCTION CAPACITANCE (pF) A
MBR3035PTR-MBR3045PTR
1
40
60
80
100
120
140
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
f=1.0MHz
Vsig=50mVp-p
0.1
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
1000
MBR3035PTR-MBR3045PTR
MBR3050PTR-MBR30200PTR
0.001
FORWARD VOLTAGE (V)
10000
100
NUMBER OF CYCLES AT 60 Hz
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Page 2/2
http://www.thinkisemi.com/
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