MCP6566/6R/6U/7/9 1.8V Low Power Open-Drain Output Comparator Features Description • Propagation Delay at 1.8VDD: - 56 ns (typical) High to Low • Low Quiescent Current: 100 µA (typical) • Input Offset Voltage: ±3 mV (typical) • Rail-to-Rail Input: VSS - 0.3V to VDD + 0.3V • Open-Drain Output • Wide Supply Voltage Range: 1.8V to 5.5V • Available in Single, Dual, and Quad • Packages: SC70, SOT-23-5, SOIC, MSOP, TSSOP The Microchip Technology, Inc. MCP6566/6R/6U/7/9 families of Open-Drain output comparators are offered in single, dual and quad configurations. Typical Applications Laptop computers Mobile Phones Hand-held Electronics RC Timers Alarm and Monitoring Circuits Window Comparators Multi-vibrators This family operates with single supply voltage of 1.8V to 5.5V while drawing less than 100 µA/comparator of quiescent current (typical). Package Types MCP6566 SOT-23-5, SC70-5 • Push-Pull Output: MCP6561/1R/1U/2/4 MCP6566R MCP656X +INA 3 + - VIN+ 1 VSS 2 VIN– 3 6 -INB 5 +INB SOIC, TSSOP 5 VSS OUTA 1 -INA 2 4 -IN - VOUT 7 OUTB MCP6569 - OUT 1 VDD 2 + +5VDD 8 VDD - + VSS 4 MCP6566U SOT-23-5 +3VPU VDD 4 -IN +IN 3 Typical Application VIN +IN 3 SOT-23-5 Related Device MCP6568 SOIC, MSOP 5 VDD OUTA 1 -INA 2 - • Microchip Advanced Part Selector (MAPS) • Analog Demostration and Evaluation Boards • Application Notes + OUT 1 VSS 2 Design Aids + • • • • • • • These comparators are optimized for low power 1.8V, single-supply applications with greater than rail-to-rail input operation. The internal input hysteresis eliminates output switching due to internal input noise voltage, reducing current draw. The open-drain output of the MCP6566/6R/6U/7/9 family requires a pull up resistor and it supports pull-up voltages above and below VDD which can be used to level shift. The output toggle frequency can reach a typical of 4 MHz (typical) while limiting supply current surges and dynamic power consumption during switching. 14 OUTD - + + - +INA 3 13 -IND 12 +IND VDD 4 11 VSS +INB 5 10 +INC -INB 6 5 VDD OUTB 7 - + + - 9 -INC 8 OUTC 4 OUT R2 R3 RF © 2009 Microchip Technology Inc. DS22143B-page 1 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 2 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* ESD protection on all pins (HBM/MM) .................≥ 4 kV/300V *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. VDD - VSS ....................................................................... 6.5V Open-Drain Output.............................................VSS + 10.5V All other inputs and outputs...........VSS – 0.3V to VDD + 0.3V Difference Input voltage ......................................|VDD - VSS| Output Short Circuit Current .................................... ±25 mA Current at Input Pins .................................................. ±2 mA Current at Output and Supply Pins .......................... ±50 mA Storage temperature ................................... -65°C to +150°C Ambient temp. with power applied .............. -40°C to +125°C Junction temp............................................................ +150°C DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS, and RPull-Up = 20 kΩ to VPU = VDD (see Figure 1-1). Parameters Symbol Min Typ Max Units Conditions VDD 1.8 — 5.5 V IQ 60 100 130 µA IOUT = 0 PSRR 63 70 — dB VCM = VSS +10 mV VCM = VSS (Note 1) — µV/°C VCM = VSS — pA VCM = VSS — pA TA = +25°C, VIN- = VDD/2 Power Supply Supply Voltage Quiescent Current per comparator Power Supply Rejection Ratio Input Input Offset Voltage Input Offset Drift Input Offset Current Input Bias Current VOS -10 ΔVOS/ΔT — IOS — ±3 ±2 ±1 IB — 1 — 60 — pA TA = +85°C, VIN- = VDD/2 — 1500 5000 pA TA = +125°C, VIN- = VDD/2 VCM = VSS (Notes 1, 2) VHYST 1.0 — 5.0 mV Input Hysteresis Linear Temp. Co. TC1 — 10 — µV/°C Input Hysteresis Quadratic Temp. Co. TC2 — 0.3 — µV/°C2 Common-Mode Input Voltage Range VCMR VSS−0.2 — VDD+0.2 V VSS−0.3 — VDD+0.3 V VDD = 5.5V 54 66 — dB VCM= -0.3V to VDD+0.3V, VDD = 5.5V Input Hysteresis Voltage Common-Mode Rejection Ratio CMRR 50 63 — dB VCM= VDD/2 to VDD+0.3V, VDD = 5.5V 54 65 — dB VCM= -0.3V to VDD/2, VDD = 5.5V Common Mode Input Impedance ZCM — 1013||4 — Ω||pF Differential Input Impedance ZDIFF — 1013||2 — Ω||pF Note 1: 2: 3: 4: VDD = 1.8V The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the input-referred trip points. VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2. Limit the output current to Absolute Maximum Rating of 50 mA. The pull up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this case, IOH_leak can be higher than 1 µA (see Figure 2-30). © 2009 Microchip Technology Inc. DS22143B-page 3 MCP6566/6R/6U/7/9 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS, and RPull-Up = 20 kΩ to VPU = VDD (see Figure 1-1). Parameters Symbol Min Typ Max Units VPULL_UP 1.6 VOH — IOH_leak Conditions — 5.5 V — VPULL_UP V (see Figure 1-1) (Notes 3, 4) — — 1 µA Note 4 VOL — — 0.6 V IOUT = 3 mA/8 mA @ VDD = 1.8V/5.5V ISC — ±30 — mA COUT — 8 — pF Push-Pull Output Pull-up Voltage High Level Output Voltage High Level Output Current leakage Low Level Output Voltage Short Circuit Current (Notes 3) Output Pin Capacitance Note 1: 2: 3: 4: Not to exceed Absolute Max. Rating The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the input-referred trip points. VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2. Limit the output current to Absolute Maximum Rating of 50 mA. The pull up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this case, IOH_leak can be higher than 1 µA (see Figure 2-30). AC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS, RPull-Up = 20 kΩ to VPU = VDD, and CL = 25 pf (see Figure 1-1). Parameters Symbo l Min Typ Max Units tPHL — 56 80 ns VCM= VDD/2, VDD = 1.8V — 34 80 ns VCM= VDD/2, VDD = 5.5V tF — 20 — ns fTG — 4 — MHz VDD = 5.5V — 2 — MHz VDD = 1.8V — 350 — µVP-P 10 Hz to 10 MHz (Note 1) Conditions Propagation Delay High-to-Low,100 mV Overdrive Output Fall Time Maximum Toggle Frequency Input Voltage Noise Note 1: 2: ENI ENI is based on SPICE simulation. Rise time tR and tPLH depend on the load (RL and CL). These specification are valid for the specified load only. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V and VSS = GND. Parameters Symbo l Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, SC70-5 θJA — 331 — °C/W Thermal Resistance, SOT-23-5 θJA — 220.7 — °C/W Thermal Resistance, 8L-MSOP θJA — 211 — °C/W Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W Thermal Resistance, 14L-SOIC θJA — 95.3 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W Thermal Package Resistances DS22143B-page 4 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 1.2 Test Circuit Configuration This test circuit configuration is used to determine the AC and DC specifications. VDD MCP656X VPU = VDD 200 kΩ IOUT VOUT 25 pF 200 kΩ VIN = VSS RPU 20 kΩ VSS = 0V FIGURE 1-1: AC and DC Test Circuit for the Open-Drain Output Comparators. © 2009 Microchip Technology Inc. DS22143B-page 5 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 6 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 40% 30% 30% VDD = 5.5V VCM = VSS Avg. = -0.9 mV StDev = 2.1 mV 3588 units VDD = 1.8V VCM = VSS Avg. = -0.1 mV StDev = 2.1 mV 3588 units Occurrences (%) Occurrences (%) 50% 20% 10% 0% -6 FIGURE 2-1: 40% -4 -2 0 2 VOS (mV) 4 6 8 Input Offset Voltage. 10% 1.0 0% 36 48 Input Offset Voltage Drift. VDD = 5.5V VOUT VIN - 3.0 2.0 1.0 0.0 Time (3 µs/div) Input vs. Output Signal, No © 2009 Microchip Technology Inc. 2.5 3.0 3.5 VHYST (mV) 4.0 4.5 5.0 Input Hysteresis Voltage. VDD = 1.8V Avg. = 12 µV/°C StDev = 0.6 µV/°C 20% 1380 Units TA = -40°C to 125°C VCM = VSS 10% 2 4 6 8 10 12 14 16 VHYST Drift, TC1 (µV/°C) 18 20 FIGURE 2-5: Input Hysteresis Voltage Drift - Linear Temp. Co. (TC1). 30% 20% 10% VDD = 5.5V VDD = 1.8V Avg. = 0.25 µV/°C 2 2 StDev = 0.1 µV/°C Avg. = 0.3 µV/°C StDev = 0.2 µV/°C 2 2 1380 Units TA = -40°C to +125°C VCM = VSS 0% -0.50 -1.0 FIGURE 2-3: Phase Reversal. 2.0 30% 0 VIN+ = VDD /2 5.0 VOUT (V) 40% 60 Occurrences (%) FIGURE 2-2: 1.5 VDD = 5.5V Avg. = 10.4 µV/°C StDev = 0.6 µV/°C 50% 0% -60 -48 -36 -24 -12 0 12 24 VOS Drift (µV/°C) 4.0 5% 60% VCM = VSS Avg. = 0.9 µV/°C StDev = 6.6 µV/°C 1380 Units TA = -40°C to +125°C 20% 6.0 10% FIGURE 2-4: 30% 7.0 15% 10 Occurrences (%) Occurrences (%) 50% 20% VDD = 5.5V Avg. = 3.6 mV StDev = 0.1 mV 3588 units 0% -10 -8 60% VDD = 1.8V Avg. = 3.4 mV StDev = 0.2 mV 3588 units 25% -0.25 0.00 0.25 0.50 0.75 VHYST Drift, TC2 (µV/°C2) 1.00 FIGURE 2-6: Input Hysteresis Voltage Drift - Quadratic Temp. Co. (TC2). DS22143B-page 7 MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 3.0 5.0 VCM = VSS 2.0 VCM = VSS VDD = 1.8V VHYST (mV) V OS (mV) 4.0 1.0 0.0 -1.0 3.0 VDD= 1.8V 2.0 VDD = 5.5V -2.0 VDD= 5.0V -3.0 1.0 -50 -25 0 FIGURE 2-7: Temperature. 4.0 25 50 75 Temperature (°C) 100 125 Input Offset Voltage vs. -50 -25 0 FIGURE 2-10: Temperature. 25 50 75 Temperature (°C) 5.0 VDD = 1.8V 2.0 TA= +125°C 4.0 V HYST (mV) TA= +85°C 0.0 TA= +25°C TA= -40°C -2.0 3.0 TA= +25°C 2.0 TA= +85°C VDD = 1.8V -4.0 -0.3 0.0 0.3 0.6 0.9 1.2 VCM (V) 1.5 1.8 1.0 -0.3 2.1 FIGURE 2-8: Input Offset Voltage vs. Common-mode Input Voltage. 3.0 TA= +25°C 0.0 -1.0 0.9 1.2 VCM (V) 1.5 1.8 2.1 -2.0 3.0 TA= -40°C TA= +25°C TA= +85°C TA= +125°C 2.0 TA= +85°C TA= +125°C 1.0 2.0 3.0 VCM (V) 4.0 5.0 FIGURE 2-9: Input Offset Voltage vs. Common-mode Input Voltage. DS22143B-page 8 0.6 4.0 TA= -40°C 1.0 0.0 0.3 5.0 VDD = 5.5V V HYST (mV) VOS (mV) 0.0 TA= -40°C FIGURE 2-11: Input Hysteresis Voltage vs. Common-mode Input Voltage. 2.0 -3.0 -1.0 125 Input Hysteresis Voltage vs. TA= +125°C VOS (mV) 100 6.0 1.0 -0.5 0.5 1.5 VDD = 5.5V 2.5 3.5 VCM (V) 4.5 5.5 FIGURE 2-12: Input Hysteresis Voltage vs. Common-mode Input Voltage. © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 5.0 3.0 0.0 TA= +125°C TA= +85°C 4.0 TA= -40°C TA= +25°C TA= +85°C TA= +125°C 1.0 V HYST (mV) VOS (mV) 2.0 -1.0 TA= +25°C 3.0 TA= -40°C 2.0 -2.0 -3.0 1.0 1.5 2.5 3.5 VDD (V) 4.5 1.5 5.5 FIGURE 2-13: Input Offset Voltage vs. Supply Voltage vs. Temperature. 4.5 5.5 140.0 VDD = 5.5V Avg. = 97 µA StDev= 4 µA 1794 units VDD = 1.8V Avg. = 88 µA StDev= 4 µA 1794 units 40% 30% 20% 120.0 100.0 IQ (µA) Occurrences (%) 3.5 V DD (V) FIGURE 2-16: Input Hysteresis Voltage vs. Supply Voltage vs. Temperature. 50% 80.0 60.0 TA= -40°C TA= +25°C TA= +85°C TA= +125°C 40.0 10% 20.0 0% 0.0 60 70 FIGURE 2-14: 130 120 80 90 100 IQ (µA) 110 120 130 Quiescent Current. 0.0 130 VDD = 1.8V 120 2.0 IQ (µA) Sweep VIN+ ,VIN - = VDD/2 90 80 0.0 0.5 1.0 VCM (V) 1.5 2.0 FIGURE 2-15: Quiescent Current vs. Common-mode Input Voltage. © 2009 Microchip Technology Inc. 4.0 5.0 6.0 Sweep VIN+ ,VIN - = VDD/2 100 90 Sweep VIN - ,VIN+ = VDD/2 80 Sweep VIN- ,VIN+ = VDD/2 V /2 70 3.0 V DD (V) VDD = 5.5V 110 100 60 -0.5 1.0 FIGURE 2-17: Quiescent Current vs. Supply Voltage vs Temperature. 110 IQ (µA) 2.5 70 2.5 60 -1.0 0.0 1.0 2.0 3.0 VCM (V) 4.0 5.0 6.0 FIGURE 2-18: Quiescent Current vs. Common-mode Input Voltage. DS22143B-page 9 MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 150 150 IDD Spike near VPU = 0.9V VDD = 5.5 V VDD = 5.5V VDD = 4.5V VDD = 3.5V 100 VDD = 2.5V VDD = 2.0V VDD = 1.8V 75 -2.5 -0.5 100,000 0dB Output Attenuation 1.5 3.5 VPU - VDD (V) 5.5 7.5 9.5 TA = 10,000 VDD = 5.5V 250 200 VDD = 1.8V 150 VDD = 2.0 V FIGURE 2-22: Quiescent Current vs. Pull-up to Supply Voltage Difference. IOH_leak (pA) IQ (µA) 300 VDD = 2.5 V VDD = 1.8 V Quiescent Current vs. 100 mV Over-Drive VCM = VDD/2 RL = Open 350 100 50 -4.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 V PU (V) 400 VDD = 3.5 V 75 50 FIGURE 2-19: Pull-up Voltage. VDD = 4.5 V 125 IQ (µA) IQ (µA) 125 1,000 TA = +85°C 100 TA = +25°C 10 100 1 50 10 10 100 100 FIGURE 2-20: Quiescent Current vs. Toggle Frequency. 1000 1.5 2.5 1k 10k 100000 100k 100000 1M 10M 1000 10000 1E+07 Toggle Frequency (Hz) 0 FIGURE 2-23: Pull-up Voltage. 1000 VDD= 1.8V Output Leakage Current vs. VDD= 5.5V 800 VOL (mV) 800 VOL (mV) 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 VPU (V) 600 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 400 200 TA = +125°C 125°C TA = +85°C TA = +25°C TA = -40°C 600 400 200 0 0 0.0 3.0 FIGURE 2-21: Current. DS22143B-page 10 6.0 9.0 IOUT (mA) 12.0 15.0 Output Headroom vs Output 0 FIGURE 2-24: Current. 5 10 15 IOUT (mA) 20 25 Output Headroom Vs Output © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 50% VDD = 1.8V 100 mV Over-Drive VCM = VDD /2 40% Occurrences (%) Occurrences (%) 50% tPHL Avg. = 54.4 ns StDev= 2 ns 198 units 30% 20% 10% 0% 40% 30% 20% 10% 0% 30 35 40 45 50 55 60 65 70 75 80 30 35 40 45 Prop. Delay (ns) FIGURE 2-25: Delays. High-to-Low Propagation FIGURE 2-28: Delays. 70 75 80 High-to-Low Propagation 100 mV Over-Drive VCM = VDD/2 VCM = VDD/2 70 210 Prop. Delay (ns) Prop. Delay (ns) 50 55 60 65 Prop. Delay (ns) 80 260 tPHL , VDD = 1.8V 160 110 tPHL , VDD = 5.5V 60 tPHL , VDD = 1.8V 60 50 40 30 10 tPHL , VDD = 5.5V 20 1 10 100 -50 1000 -25 Over-Drive (mV) FIGURE 2-26: Over-Drive. Propagation Delay vs. Input FIGURE 2-29: Temperature. 120 140 VCM = VDD /2 120 100 tPHL , 10 mV Over-Drive 80 60 tPHL , 100 mV Over-Drive 0 25 50 75 Temperature (°C) 20 40 0 -40 TA= -40°C TA= +25°C TA= +85°C TA= +125°C -120 1.5 FIGURE 2-27: Supply Voltage. 2.5 3.5 V DD (V) 4.5 Propagation Delay vs. © 2009 Microchip Technology Inc. 5.5 125 Propagation Delay vs. -80 40 100 TA= -40°C TA= +25°C TA= +85°C TA= +125°C 80 ISC (mA) Prop. Delay (ns) VDD= 5.5V 100mV Over-Drive VCM = VDD/2 tPHL Avg. = 33 ns StDev= 1 ns 198 units 0.0 1.0 2.0 3.0 VDD (V) 4.0 5.0 6.0 FIGURE 2-30: Short Circuit Current vs. Supply Voltage vs. Temperature. DS22143B-page 11 MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 80 80 VDD= 1.8V 100 mV Over-Drive 70 Prop. Delay (ns) Prop. Delay (ns) 70 tPHL 60 50 40 20 0.00 tPHL 50 40 20 0.50 1.00 VCM (V) 1.50 2.00 FIGURE 2-31: Propagation Delay vs. Common-mode Input Voltage. 0.0 10000 100mV Over-Drive VCM = VDD /2 VDD = 1.8V, tPHL 10 Prop. Delay (ns) 100 VDD = 5.5V, tPHL 1 0.1 0.01 0.001 1 0.01 10 Propagation Delay vs. 1000 6.0 tPLH Prop. Delay (ns) TA= -40°C TA= +25°C TA= +85°C TA= +125°C 10p 1E+01 1.0 10.0 100.0 RPU (kΩ) FIGURE 2-35: Pull-up Resistor. 10µ 1E+07 Propagation Delay vs. 100 mV Over-Drive VCM = VDD /2 tPLH, VDD = 5.5V 1000 tPLH, VDD = 1.8V tPHL, VDD = 1.8V 100 tPLH, VDD = 5.5V 10 -0.6 -0.4 -0.2 0 Input Voltage (V) FIGURE 2-33: Input Bias Current vs. Input Voltage vs Temperature. DS22143B-page 12 5.0 tPHL 10000 0.1p 1E-01 -0.8 4.0 100 1E+09 1m 1n 1E+03 3.0 VCM (V) 100 mV Over-Drive VCM = VDD/2 0.1 10m 1E+11 100n 1E+05 2.0 10 0.1 1 10 100 1E+06 1000 100 1000 10000 100000 Capacitive Load (nf) FIGURE 2-32: Capacitive Load. 1.0 FIGURE 2-34: Propagation Delay vs. Common-mode Input Voltage. 1000 Prop. Delay (µs) 60 30 30 Input Current (A) VDD= 5.5V 100 mV Over-Drive 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V PU (V) FIGURE 2-36: Pull-up Voltage. Propagation Delay vs. © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. 80 30% 78 VCM = VSS VDD = 1.8V to 5.5V 76 Occurrences (%) CMRR/PSRR (dB) Input Referred PSRR 74 CMRR 72 VCM = -0.3V to VDD + 0.3V VDD = 5.5V 20% 10% 70 0 25 50 75 Temperature (°C) 100 30% VDD = 1.8V 3588 units 20% -4 -3 -2 -1 0 1 2 3 4 5 CMRR (mV/V) VCM = VSS Avg. = 200 µV/V StDev= 94 µV/V 3588 units 25% -5 125 15% 10% FIGURE 2-40: Ratio (CMRR). 30% Occurrences (%) -25 FIGURE 2-37: Common-mode Rejection Ratio and Power Supply Rejection Ratio vs. Temperature. Occurrences (%) VCM = -0.2V to VDD /2 Avg. = 0.5 mV StDev= 0.1 mV 0% -50 Common-mode Rejection VCM = VDD/2 to VDD+ 0.3V Avg. = 0.03 mV StDev= 0.7 mV VCM = -0.3V to V DD + 0.3V Avg. = 0.1 mV StDev= 0.4 mV 20% 10% VCM = -0.3V to VDD/2 Avg. = 0.2 mV StDev= 0.4 mV VDD = 5.5V 3588 units 5% 0% -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 0% -600 -400 -200 0 200 400 600 CMRR (mV/V) PSRR (µV/V) FIGURE 2-38: Ratio (PSRR). Power Supply Rejection FIGURE 2-41: Ratio (CMRR). Common-mode Rejection 10000 1000 IOS and IB (pA) 100 IB 10 1 |I OS| VDD = 5.5V IB @ TA= +125°C 1000 IOS and IB (pA) VCM = -0.2V to VDD + 0.2V Avg. = 0.6 mV StDev= 0.1 mV VCM = VDD/2 to VDD+ 0.2V Avg. = 0.7 mV StDev= 1 mV IB @ TA= +85°C 100 10 1 |IOS| @ TA= +125°C 0.1 |IOS |@ TA= +85°C 0.01 0.001 0.1 25 50 75 100 Temperature (°C) 125 FIGURE 2-39: Input Offset Current and Input Bias Current vs. Temperature. © 2009 Microchip Technology Inc. 0 1 2 3 V CM (V) 4 5 6 FIGURE 2-42: Input Offset Current and Input Bias Current vs. Common-mode Input Voltage vs. Temperature. DS22143B-page 13 MCP6566/6R/6U/7/9 Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = GND, RL = 20 kΩ to VPU = VDD, and CL = 25 pF. Output Jitter pk-pk (ns) 10000 VDD = 5.5V 1000 VIN+ = 2Vpp (sine) 100 10 1 0.1 100 100 1k 1000 FIGURE 2-43: Frequency. DS22143B-page 14 10k 100k 1M 10000 100000 100000 Input Frequency (Hz) 0 10M 1E+07 Output Jitter vs. Input © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP6566 PIN FUNCTION TABLE MCP6566R MCP6566U MCP6568 MCP6569 MSOP, SOIC SOIC, TSSOP Symbol Description SC70-5, SOT-23-5 SOT-23-5 1 1 5 1 1 OUT, OUTA Digital Output (comparator A) 4 4 3 2 2 VIN–, VINA– 3 3 1 3 3 VIN+, VINA+ Non-inverting Input (comparator A) 5 2 4 8 4 VDD — — — 5 5 VINB+ — — — 6 6 VINB– Inverting Input (comparator B) — — — 7 7 OUTB Digital Output (comparator B) — — — — 8 OUTC Digital Output (comparator C) — — — — 9 VINC– Inverting Input (comparator C) — — — — 10 VINC+ Non-inverting Input (comparator C) 2 5 2 4 11 VSS 3.1 SOT-23-5 Positive Power Supply Non-inverting Input (comparator B) Negative Power Supply — — — — 12 VIND+ Non-inverting Input (comparator D) — — — — 13 VIND– Inverting Input (comparator D) — — — — 14 OUTD Digital Output (comparator D) Analog Inputs The comparator non-inverting and inverting inputs are high-impedance CMOS inputs with low bias currents. 3.2 Inverting Input (comparator A) Digital Outputs The comparator outputs are CMOS, open-drain digital outputs. They are designed to make level shifting and wired-OR easy to implement. © 2009 Microchip Technology Inc. 3.3 Power Supply (VSS and VDD) The positive power supply pin (VDD) is 1.8V to 5.5V higher than the negative power supply pin (VSS). For normal operation, the other pins are at voltages between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need a local bypass capacitor (typically 0.01 µF to 0.1 µF) within 2 mm of the VDD pin. These can share a bulk capacitor with nearby analog parts (within 100 mm), but it is not required. DS22143B-page 15 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 16 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 4.0 APPLICATIONS INFORMATION The MCP6566/6R/6U/7/9 family of open-drain output comparators are fabricated on Microchip’s state-ofthe-art CMOS process. They are suitable for a wide range of high speed applications requiring low power consumption. 4.1 Comparator Inputs 4.1.1 NORMAL OPERATION The input stage of this family of devices uses two differential input stages in parallel. This configuration provides three regions of operation, one operates at low input voltages, one at high input voltages, and one at mid input voltage. With this topology, the input voltage range is 0.3V above VDD and 0.3V below VSS, while providing low offset voltage through out the common mode range. The input offset voltage is measured at both VSS - 0.3V and VDD + 0.3V to ensure proper operation. 8 7 6 5 4 3 2 1 0 -1 -2 -3 VDD = 5.0V VIN– VOUT Hysteresis 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 Input Voltage (10 mV/div) Output Voltage (V) The MCP6566/6R/6U/7/9 family has internally-set hysteresis VHYST that is small enough to maintain input offset accuracy and large enough to eliminate output chattering caused by the comparator’s own input noise voltage ENI. Figure 4-1 depicts this behavior. Input offset voltage (VOS) is the center (average) of the (input-referred) low-high and high-low trip points. Input hysteresis voltage (VHYST) is the difference between the same trip points. 4.1.2 INPUT VOLTAGE AND CURRENT LIMITS The ESD protection on the inputs can be depicted as shown in Figure 4-2. This structure was chosen to protect the input transistors, and to minimize input bias current (IB). The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go too far above VDD; their breakdown voltage is high enough to allow normal operation, and low enough to bypass ESD events within the specified limits. VDD Bond Pad VIN+ Bond Pad VSS Input Stage VIN– Bond Pad FIGURE 4-2: Structures. Simplified Analog Input ESD In order to prevent damage and/or improper operation of these amplifiers, the circuits they are in must limit the currents (and voltages) at the VIN+ and VIN– pins (see Section 1.1 “Maximum Ratings*” at the beginning of Section 1.0 “Electrical Characteristics”). Figure 4-3 shows the recommended approach to protecting these inputs. The internal ESD diodes prevent the input pins (VIN+ and VIN–) from going too far below ground, and the resistors R1 and R2 limit the possible current drawn out of the input pin. Diodes D1 and D2 prevent the input pin (VIN+ and VIN–) from going too far above VDD. When implemented as shown, resistors R1 and R2 also limit the current through D1 and D2. VDD Time (100 ms/div) FIGURE 4-1: The MCP6566/6R/6U/7/9 comparators’ internal hysteresis eliminates output chatter caused by input noise voltage. Bond Pad D1 R4 + V1 VPU VOUT MCP656X – R1 D2 V2 R2 R1 ≥ VSS – (minimum expected V1) 2 mA R2 ≥ VSS – (minimum expected V2) 2 mA FIGURE 4-3: Inputs. © 2009 Microchip Technology Inc. R3 Protecting the Analog DS22143B-page 17 MCP6566/6R/6U/7/9 It is also possible to connect the diodes to the left of the resistors R1 and R2. In this case, the currents through the diodes D1 and D2 need to be limited by some other mechanism. The resistor then serves as in-rush current limiter; the DC current into the input pins (VIN+ and VIN–) should be very small. 4.3.1 NON-INVERTING CIRCUIT Figure 4-4 shows a non-inverting circuit for singlesupply applications using just two resistors. The resulting hysteresis diagram is shown in Figure 4-5. A significant amount of current can flow out of the inputs when the common mode voltage (VCM) is below ground (VSS); see Figure 4-3. Applications that are high impedance may need to limit the useable voltage range. VPU VDD RPU - VREF MCP656X VOUT + 4.1.3 PHASE REVERSAL The MCP6566/6R/6U/7/9 comparator family uses CMOS transistors at the input. They are designed to prevent phase inversion when the input pins exceed the supply voltages. Figure 2-3 shows an input voltage exceeding both supplies with no resulting phase inversion. 4.2 R1 Externally Set Hysteresis Greater flexibility in selecting hysteresis (or input trip points) is achieved by using external resistors. Hysteresis reduces output chattering when one input is slowly moving past the other. It also helps in systems where it is best not to cycle between high and low states too frequently (e.g., air conditioner thermostatic control). Output chatter also increases the dynamic supply current. RF FIGURE 4-4: Non-Inverting Circuit with Hysteresis for Single-Supply. Open-Drain Output The open-drain output is designed to make level-shifting and wired-OR logic easy to implement. The output stage minimizes switching current (shoot-through current from supply-to-supply) when the output changes state. See Figures 2-15, 2-18, 2-35 and 2-36, for more information. 4.3 VIN VOUT VDD VOH High-to-Low Low-to-High VIN VOL VSS VSS VTHL VTLH VDD FIGURE 4-5: Hysteresis Diagram for the Non-Inverting Circuit. The trip points for Figures 4-4 and 4-5 are: EQUATION 4-1: R ⎞ ⎛ ⎛R 1 ⎞ V TLH = V REF ⎜ 1 + ------1- ⎟ – V OL ⎜------- ⎟ RF ⎠ ⎝ ⎝R F ⎠ R ⎞ ⎛ ⎛R1 ⎞ V THL = V REF ⎜ 1 + ------1- ⎟ – V OH ⎜------- ⎟ RF ⎠ ⎝ ⎝R F ⎠ Where: DS22143B-page 18 VTLH = trip voltage from low-to-high VTHL = trip voltage from high-to-low © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 4.3.2 INVERTING CIRCUIT Where: Figure 4-6 shows an inverting circuit for single-supply using three resistors. The resulting hysteresis diagram is shown in Figure 4-7. R3 V 23 = ------------------- × V DD R2 + R3 VPU VDD VIN Using this simplified circuit, the trip voltage can be calculated using the following equation: RPU VDD R2 R3 R 23 = -----------------R2 + R3 MCP656X VOUT EQUATION 4-2: R2 RF ⎛ R 23 ⎞ V THL = V OH ⎜ -----------------------⎟ + V 23 ⎛ ----------------------⎞ ⎝ ⎠ R + R R ⎝ 23 23 + R F F⎠ RF R3 RF ⎛ R 23 ⎞ V TLH = V OL ⎜ -----------------------⎟ + V 23 ⎛ ----------------------⎞ ⎝ ⎠ R + R R ⎝ 23 23 + R F F⎠ FIGURE 4-6: Hysteresis. Where: Inverting Circuit with VTLH = trip voltage from low-to-high VTHL = trip voltage from high-to-low VOUT VDD VOH Low-to-High Figure 2-21 and Figure 2-24 can be used to determine typical values for VOH and VOL. High-to-Low 4.4 VIN VOL VSS VSS VTLH VTHL FIGURE 4-7: Inverting Circuit. VDD Hysteresis Diagram for the In order to determine the trip voltages (VTHL and VTLH) for the circuit shown in Figure 4-6, R2 and R3 can be simplified to the Thevenin equivalent circuit with respect to VDD, as shown in Figure 4-8. VPU VDD With this family of comparators, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good edge rate performance. 4.5 Capacitive Loads Reasonable capacitive loads (e.g., logic gates) have little impact on propagation delay (see Figure 2-32). The supply current increases with increasing toggle frequency (Figure 2-20), especially with higher capacitive loads. The output slew rate and propogation delay performance will be reduced with higher capacitive loads. RPU MCP656X + Bypass Capacitors VOUT VSS V23 R23 FIGURE 4-8: RF Thevenin Equivalent Circuit. © 2009 Microchip Technology Inc. DS22143B-page 19 MCP6566/6R/6U/7/9 4.6 PCB Surface Leakage 4.7 In applications where low input bias current is critical, PCB (Printed Circuit Board) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012Ω. A 5V difference would cause 5 pA of current to flow. This is greater than the MCP6566/6R/6U/7/9 family’s bias current at +25°C (1 pA, typical). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 4-9. IN- IN+ VSS When designing the PCB layout it is critical to note that analog and digital signal traces are adequately separated to prevent signal coupling. If the comparator output trace is at close proximity to the input traces then large output voltage changes from, VSS to VDD or visa versa, may couple to the inputs and cause the device output to oscillate. To prevent such oscillation, the output traces must be routed away from the input pins. The SC70-5 and SOT-23-5 are relatively immune because the output pin OUT (pin 1) is separated by the power pin VDD/VSS (pin 2) from the input pin +IN (as long as the analog and digital traces remain separated through out the PCB). However, the pinouts for the dual and quad packages (SOIC, MSOP, TSSOP) have OUT and -IN pins (pin 1 and 2) close to each other. The recommended layout for these packages is shown in Figure 4-10. OUTA VDD -INA OUTB +INA -INB VSS +INB Guard Ring FIGURE 4-9: Example Guard Ring Layout for Inverting Circuit. 1. 2. Inverting Configuration (Figures 4-6 and 4-9): a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the comparator (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN–) to the input pad without touching the guard ring. Non-inverting Configuration (Figure 4-4): a) Connect the non-inverting pin (VIN+) to the input pad without touching the guard ring. b) Connect the guard ring to the inverting input pin (VIN–). PCB Layout Technique FIGURE 4-10: 4.8 Recommended Layout. Unused Comparators An unused amplifier in a quad package (MCP6569) should be configured as shown in Figure 4-11. This circuit prevents the output from toggling and causing crosstalk. It uses the minimum number of components and draws minimal current (see Figure 2-15 and Figure 2-15). ¼ MCP6569 VDD – + FIGURE 4-11: DS22143B-page 20 Unused Comparators. © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 4.9 Typical Applications 4.9.1 4.9.3 PRECISE COMPARATOR Some applications require higher DC precision. An easy way to solve this problem is to use an amplifier (such as the MCP6291) to gain-up the input signal before it reaches the comparator. Figure 4-12 shows an example of this approach. BISTABLE MULTI-VIBRATOR A simple bistable multi-vibrator design is shown in Figure 4-14. VREF needs to be between the power supplies (VSS = GND and VDD) to achieve oscillation. The output duty cycle changes with VREF. VPU R1 VDD R2 VREF VREF MCP6291 RPU VDD VPU VDD MCP656X RPU VOUT VIN R1 MCP656X R2 VOUT VREF FIGURE 4-12: Comparator. 4.9.2 C1 Precise Inverting FIGURE 4-14: R3 Bistable Multi-vibrator. WINDOWED COMPARATOR Figure 4-13 shows one approach to designing a windowed comparator. The AND gate produces a logic ‘1’ when the input voltage is between VRB and VRT (where VRT > VRB). VRT VPU 1/2 MCP6567 RPU VOUT VIN VRB FIGURE 4-13: 1/2 MCP6567 Windowed Comparator. © 2009 Microchip Technology Inc. DS22143B-page 21 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 22 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 5.0 DESIGN AIDS 5.3 5.1 Microchip Advanced Part Selector (MAPS) The following Microchip Application Notes are available on the Microchip web site at www.microchip.com and are recommended as supplemental reference resources: MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip web site at www.microchip.com/ maps, the MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for Data sheets, Purchase, and Sampling of Microchip parts. 5.2 Application Notes • AN895, “Oscillator Circuit For RTD Temperature Sensors”, DS00895. Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site at www.microchip.com/ analogtools. Three of our boards that are especially useful are: • 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, P/N SOIC8EV • 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N SOIC14EV • 5/6-Pin SOT23 Evaluation Board, P/N VSUPEV2 © 2009 Microchip Technology Inc. DS22143B-page 23 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 24 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SC70 (MCP6566) Example: BJ25 XXNN 5-Lead SOT-23 (MCP6566, MCP6566R) Device XXNN Example: Code MCP6566T JYNN MCP6566RT JZNN MCP6566UT WLNN JY25 Note: Applies to 5-Lead SOT-23. 8-Lead MSOP (MCP6567) XXXXXX 6567E YWWNNN 934256 8-Lead SOIC (150 mil) (MCP6567) XXXXXXXX XXXXYYWW NNN Example: MCP6567E e3 SN^^0934 256 Legend: XX...X Y YY WW NNN e3 * Note: Example: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2009 Microchip Technology Inc. DS22143B-page 25 MCP6566/6R/6U/7/9 Package Marking Information (Continued) 14-Lead SOIC (150 mil) (MCP6569) Example: XXXXXXXXXX XXXXXXXXXX YYWWNNN 14-Lead TSSOP (MCP6569) MCP6569 E/SL^^ e3 0934256 Example: XXXXXXXX MCP6569E YYWW 0934 NNN 256 DS22143B-page 26 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D b 3 1 2 E1 E 4 5 e A e A2 c A1 L 3# 4# 5$8 %1 44" " 5 5 56 7 ( 1# 6, : # ; < ; < < !!1/ / #! %% 9()* 6, =!# " ; !!1/=!# " ( ( ( 6, 4# ; ( . 4 9 #4# 4! / 4!=!# ; < 9 8 ( < !"! #$! !% # $ !% # $ !# "'( )*+ ) #&#,$ --# $## #&! ! © 2009 Microchip Technology Inc. - *9) DS22143B-page 27 MCP6566/6R/6U/7/9 . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / DS22143B-page 28 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 ! . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 3# 4# 5$8 %1 44" " 5 56 7 5 ( 4!1# ()* 6$# !4!1# 6, : # < ; < < ( 6, =!# " < !!1/=!# " < ; 6, 4# < !!1/ / #! %% )* ( . #4# 4 < 9 . # # 4 ( < ; . # I > < > ; < 9 4! / 4!=!# 8 < ( !"! #$! !% # $ !% # $ #&! ! !# "'( )*+ ) #&#,$ --# $## © 2009 Microchip Technology Inc. - *) DS22143B-page 29 MCP6566/6R/6U/7/9 " # $%## . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D N E E1 NOTE 1 1 2 e b A2 A c φ L L1 A1 3# 4# 5$8 %1 44" " 5 5 56 7 ; 1# 6, : # < < ( ;( ( < ( !!1/ / #! %% 9()* 6, =!# " !!1/=!# " )* 6, 4# )* . #4# 4 . # # 4 . # 4! / )* 9 ; (". > < ;> ; < 4!=!# 8 < 1, $!&%#$ , 08$#$ #8 #!-# # # ! !"! #$! !% # $ !% # $ #&!( ! !# "'( )*+ ) #&#,$ --# $## ".+ % 0$ $-# $## 0% % # $ DS22143B-page 30 - *) © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2009 Microchip Technology Inc. DS22143B-page 31 MCP6566/6R/6U/7/9 " &'(!)*+,- . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D e N E E1 NOTE 1 1 2 3 α h b h A2 A c φ L A1 β L1 3# 4# 5$8 %1 44" " 5 5 56 7 ; 1# 6, : # < < ( < < < ( !!1/ / #! %%? )* ( 6, =!# " !!1/=!# " )* 6, 4# )* * % @ . # A #4# 4 . # # 4 . # 9)* ( < ( < ". > < ;> < ( 4!=!# 8 < ( ! %# (> < (> ! %#) ## (> < 4! / (> 1, $!&%#$ , 08$#$ #8 #!-# # # ! ?%#* # # !"! #$! !% # $ !% # $ #&!( ! !# "'( )*+ ) #&#,$ --# $## ".+ % 0$ $-# $## 0% % # $ DS22143B-page 32 - *() © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 " &'(!)*+,- . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / © 2009 Microchip Technology Inc. DS22143B-page 33 MCP6566/6R/6U/7/9 ./ &'(!)*+,- . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D N E E1 NOTE 1 1 2 3 e h b α h A2 A c φ L A1 β L1 3# 4# 5$8 %1 44" " 5 5 56 7 1# 6, : # < < ( < < < ( !!1/ / #! %%? )* 6, =!# " !!1/=!# " )* 6, 4# ;9()* * % @ . # A #4# 4 . # # 4 . # ( 9)* ( < ( < ". I > < ;> < ( 4!=!# 8 < ( ! %# D (> < (> ! %#) ## E (> < 4! / (> 1, $!&%#$ , 08$#$ #8 #!-# # # ! ?%#* # # !"! #$! !% # $ !% # $ #&!( ! !# "'( )*+ ) #&#,$ --# $## ".+ % 0$ $-# $## 0% % # $ DS22143B-page 34 - *9() © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / © 2009 Microchip Technology Inc. DS22143B-page 35 MCP6566/6R/6U/7/9 ./ 0 0 $ &/)/+, . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D N E E1 NOTE 1 1 2 e b c φ A2 A A1 L L1 3# 4# 5$8 %1 44" " 5 5 56 7 1# 6, : # < < ; ( ( < ( !!1/ / #! %% 9()* 6, =!# " !!1/=!# " !!1/4# ( ( . #4# 4 ( 9 ( . # # 4 . # 4! / 9)* ( ". I > < ;> < 4!=!# 8 < 1, $!&%#$ , 08$#$ #8 #!-# # # ! !"! #$! !% # $ !% # $ #&!( ! !# "'( )*+ ) #&#,$ --# $## ".+ % 0$ $-# $## 0% % # $ DS22143B-page 36 - *;) © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2009 Microchip Technology Inc. DS22143B-page 37 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 38 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 APPENDIX A: REVISION HISTORY Revision B (August 2009) The following is the list of modifications: 1. 2. Added MCP6566U throughout the document. Updated package outline drawings. Revision A (March 2009) • Original Release of this Document. © 2009 Microchip Technology Inc. DS22143B-page 39 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 40 © 2009 Microchip Technology Inc. MCP6566/6R/6U/7/9 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X /XX Temperature Range Package – Device Single Comparator (Tape and Reel) (SC70, SOT-23) MCP6566RT: Single Comparator (Tape and Reel) (SOT-23 only) MCP6566UT: Single Comparator (Tape and Reel) (SOT-23 only) MCP6567: Dual Comparator MCP6567T: Dual Comparator(Tape and Reel) MCP6569: Quad Comparator MCP6569T: Quad Comparator(Tape and Reel) Examples: a) MCP6566T-E/LT: b) MCP6566T-E/OT: a) MCP6566RT-E/OT: Tape and Reel Extended Temperature, 5LD SOT-23 package. a) MCP6566UT-E/OT: Tape and Reel Extended Temperature, 5LD SOT-23 package. a) MCP6567-E/MS: b) MCP6567-E/SN: a) MCP6569T-E/SL: b) MCP6569T-E/ST: MCP6566T: Temperature Range E = -40°C to +125°C Package LT OT MS SN ST SL = = = = = = Plastic Small Outline Transistor (SC70), 5-lead Plastic Small Outline Transistor (SOT-23), 5-lead Plastic Micro Small Outline Transistor, 8-lead Plastic Small Outline Transistor, 8-lead Plastic Thin Shrink Small Outline Transistor, 14-lead Plastic Small Outline Transistor, 14-lead © 2009 Microchip Technology Inc. Tape and Reel, Extended Temperature, 5LD SC70 package. Tape and Reel Extended Temperature, 5LD SOT-23 package. Extended Temperature 8LD MSOP package. Extended Temperature 8LD SOIC package. Tape and Reel Extended Temperature 14LD SOIC package. Tape and Reel Extended Temperature 14LD TSSOP package. DS22143B-page 41 MCP6566/6R/6U/7/9 NOTES: DS22143B-page 42 © 2009 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2009 Microchip Technology Inc. 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