® MBR10100CTR thru MBR10200CTR Pb MBR10100CTR/MBR10150CTR/MBR10200CTR Pb Free Plating Product 10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers TO-220AB Unit : inch (mm) .054(1.39) .045(1.15) .177(4.5)MAX Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .038(0.96) .019(0.50) Mechanical Data Case: Heatsink TO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately .50(12.7)MIN Application .1(2.54) .624(15.87) .139(3.55) MIN .548(13.93) .196(5.00) .163(4.16) .269(6.85) .419(10.66) .387(9.85) .226(5.75) Features HMBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability .025(0.65)MAX .1(2.54) Case Case Negative Positive Common Cathode Common Anode Suffix "CTR" Suffix "CT" Case Case Doubler Tandem Polarity Suffix "CTD" Series Tandem Polarity Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR10100CTR MBR10150CTR MBR10200CTR UNIT Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS 70 Maximum DC blocking voltage VDC 100 Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25℃ IF= 5A, TJ=125℃ IF=10A, TJ=25℃ IF=10A, TJ=125℃ VF Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 100 150 200 V 105 140 V 150 200 V 1.0 0.5 0.85 A 0.88 0.75 0.75 0.95 0.97 0.85 0.85 V 5 1 μA mA Voltage rate of change (Rated VR) dV/dt 10000 Typical thermal resistance RθJC 1.5 TJ - 55 to +175 o - 55 to +175 o Operating junction temperature range Storage temperature range TSTG V/μs o C/W C C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBR10100CTR thru MBR10200CTR RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 12 10 8 6 4 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 2 0 0 25 50 75 100 125 150 175 180 150 8.3ms Single Half Sine Wave JEDEC Method 120 90 60 30 0 1 10 CASE TEMPERATURE (oC) 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 INSTANTANEOUS REVERSE A CURRENT (mA) INSTANTANEOUS FORWARD A CURRENT (A) 1000 100 TJ=125℃ 10 TJ=25℃ 1 1 TJ=125℃ 0.1 TJ=75℃ 0.01 0.001 TJ=25℃ 0.0001 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) CREAT BY ART FIG. 5- TYPICAL JUNCTION CAPACITANCE FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 REVERSE VOLTAGE (V) Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 100 0.01 0.1 1 10 100 T-PULSE DURATION (sec) Page 2/2 http://www.thinkisemi.com/