Microsemi JANTX2N6352 Npn darlington power silicon transistor Datasheet

TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
Qualified Level
2N6350
2N6351
2N6352
JAN
JANTX
JANTXV
2N6353
MAXIMUM RATINGS
Symbol
2N6350
2N6352
2N6351
2N6353
Units
Collector-Emitter Voltage
Collector-Base Voltage
VCER
VCBO
80
80
150
150
Emitter-Base Voltage
VEBO
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Ratings
Base Current
IB
Collector Current
IC
12
6.0
0.5
5.0
10(1)
2N6350
2N6351
Total Power Dissipation @ TA = 250C
@ TC = 1000C
Operating & Storage Junction Temperature Range
PT
TJ, Tstg
2N6352
2N6353
1.0(2)
2.0(4)
(3)
5.0
25(5)
-65 to +200
2N6350, 2N6351
TO-33*
W
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N6350
2N6351
2N6352
2N6353
Thermal Resistance, Junction-to-Case
1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50%
2) Derate linearly @ 5.72 mW/0C above TA > 250C
3) Derate linearly @ 50 mW/0C above TC > 1000C
4) Derate linearly @ 11.4 mW/0C above TA > 250C
5) Derate linearly @ 250 mW/0C above TC > 1000C
RθJC
20
4.0
Unit
0
C/W
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CER
80
150
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω
2N6350, 2N6352
2N6351, 2N6353
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
120101
Page 1 of 2
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Breakdown Voltage
IEB = 12 mAdc, Base 1 Open
IEB = 12 mAdc, Base 2 Open
Collector-Emitter Cutoff Current
VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 80 Vdc
VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 150 Vdc
2N6350, 2N6352
2N6351, 2N6353
Symbol
Min.
V(BR)EBO
6.0
12
Max.
Vdc
1.0
1.0
ICEX
Unit
µAdc
ON CHARACTERISTICS (6)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 5.0 mAdc
IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 10 mAdc
Base-Emitter Voltage
IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω
2N6350, 2N6352
hFE
2N6351, 2N6353
2N6350, 2N6352
2N6351, 2N6353
2,000
2,000
400
10,000
1,000
1,000
200
10,000
VCE(sat)
1.5
2.5
Vdc
VBE1(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 Ω; f = 10 MHz
Output Capacitance
VCB1 = 10 Vdc, 100 kHz ≤ f ≤ 1.0 MHz, Base 2 Open
hfe
5.0
25
120
pF
on
0.5
µs
off
1.2
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc
(See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
t
(See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
t
SAFE OPERATING AREA
DC Tests
TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, RB2E = 100 Ω (See fig 6 for 2N6350, 2N6351)
Test 1
VCE = 1.5Vdc, IC = 3.3 Adc
2N6350, 2N6351
Test 2
VCE = 30 Vdc, IC = 167 mAdc
2N6350, 2N6351
Test 3
VCE = 80 Vdc, IC = 35 mAdc
2N6350
Test 4
VCE = 150 Vdc, IC = 13 mAdc
2N6351
TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, RB2E = 100 Ω (See fig 7 for 2N6352, 2N6353)
Test 1
VCE = 5.0Vdc, IC = 5.0 Adc
2N6352, 2N6353
Test 2
VCE = 10 Vdc, IC = 2.5 Adc
2N6352, 2N6353
Test 3
VCE = 80 Vdc, IC = 95 mAdc
2N6352
Test 4
VCE = 150 Vdc, IC = 35 mAdc
2N6353
(6) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
Similar pages