Rohm BD9110NV-E2 Synchronous buck converter with integrated fet Datasheet

Datasheet
Synchronous Buck Converter with
Integrated FET
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
General Description
Key Specifications
 Input Voltage Range
BD9120HFN:
BD9106FVM, BD9107FVM:
BD9109FVM, BD9110NV:
 Output Voltage Range
BD9109FVM:
BD9120HFN:
BD9107FVM:
BD9106FVM, BD9110NV:
 Output Current
BD9106FVM, BD9109FVM,
BD9120HFN:
BD9107FVM:
BD9110NV:
 Switching Frequency:
 FET ON-Resistance
The
(BD9106FVM,
BD9107FVM,
BD9109FVM,
BD9110NV, and BD9120HFN) are ROHM’s high
efficiency step-down switching regulators designed to
produce a voltage as low as 1V from a supply voltage of
3.3V or 5.0V. It offers high efficiency by using
synchronous switches and provides fast transient
response to sudden load changes by implementing
current mode control.
Features
 Fast Transient Response because of Current Mode
Control System
 High Efficiency for All Load Ranges because of
Synchronous Switches (Nch and Pch FET) and
SLLMTM (Simple Light Load Mode)
 Soft-Start Function
 Thermal Shutdown and ULVO Functions
 Short-Circuit Protection with Time Delay Function
 Shutdown Function
BD9110NV:
BD9106FVM, BD9107FVM:
BD9120HFN, BD9109FVM:
 Standby Current:
 Operating Temperature Range
BD9110NV:
BD9120HFN, BD9106FVM:
BD9107FVM, BD9109FVM:
Application
Power Supply for LSI including DSP, Microcomputer
and ASIC
Packages
Typical Application Circuit
VCC
BD9120HFN
CIN
2.7V to 4.5V
4.0V to 5.5V
4.5V to 5.5V
3.30V ± 2%
1.0V to 1.5V
1.0V to 1.8V
1.0V to 2.5V
0.8A(Max)
1.2A(Max)
2.0A(Max)
1MHz(Typ)
Pch(Typ) / Nch(Typ)
200mΩ / 150mΩ
350mΩ / 250mΩ
350mΩ / 250mΩ
0μA(Typ)
-25°C to +105°C
-25°C to +85°C
-25°C to +85°C
W(Typ) x D(Typ) x H(Max)
L
EN
VCC,PVCC
VOUT
ITH
SW
VOUT
CO
R2
HSON8
2.90mm x 3.00mm x 0.60mm
MSOP8
2.90mm x 4.00mm x 0.90mm
GND,PGND
R1
RITH
CITH
Figure 1. Typical Application Circuit
SON008V5060
5.00mm x 6.00mm x 1.00mm
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
○ This product has no designed protection against radioactive rays
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Pin Configuration
(Top View)
(Top View)
1
ADJ
VCC
8
1
VOUT
2
ITH
PVCC
7
2
3
EN
SW
6
4
GND
PGND
5
VCC
8
ITH
PVCC
7
3
EN
SW
6
4
GND
PGND
5
Figure 3. BD9109FVM
Figure 2. BD9106FVM, BD9107FVM
(Top View)
(Top View)
ADJ 1
8 EN
VCC 2
7 PVCC
ITH 3
6 SW
GND 4
5 PGND
1
ADJ
2
VCC
8
ITH
PVCC
7
3
EN
SW
6
4
GND
PGND
5
Figure 5. BD9120HFN
Figure 4. BD9110NV
Pin Description
【BD9106FVM, BD9107FVM, BD9109FVM】
Pin No.
Pin Name
1
ADJ/VOUT
2
ITH
3
EN
4
GND
5
PGND
6
SW
7
PVCC
8
VCC
【BD9110NV】
Pin No.
Pin Name
1
ADJ
2
VCC
3
ITH
4
GND
5
PGND
6
SW
7
PVCC
8
EN
【BD9120HFN】
Pin No.
Pin Name
1
ADJ
2
ITH
3
EN
4
GND
5
PGND
6
SW
7
PVCC
8
VCC
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Function
Output voltage detection pin / ADJ for BD9106･07FVM
GmAmp output pin/connected to phase compensation capacitor
Enable pin(active high)
Ground pin
Power switch ground pin
Power switch node
Power switch supply pin
Power supply input pin
Function
Output voltage detection pin
Power supply input pin
GmAmp output pin/connected to phase compensation capacitor
Ground pin
Power switch ground pin
Power switch node
Power switch supply pin
Enable pin(active high)
Function
Output voltage detection pin
GmAmp output pin/connected to phase compensation capacitor
Enable pin(active high)
Ground pin
Power switch ground pin
Power switch node
Power switch supply pin
Power supply input pin
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Lineup
Operating
Temperature
Range
Input
Voltage
Range
Output
Voltage
Range
4.0V to 5.5V
-25°C to +85°C
4.5V to 5.5V
2.7V to 4.5V
-25°C to +105°C
4.5V to 5.5V
Datasheet
BD9120HFN
Output
Current
（Max）
UVLO
Threshold
Voltage
（Typ）
0.8A
3.4V
MSOP8
Reel of 3000
BD9106FVM-TR
1.2A
2.7V
MSOP8
Reel of 3000
BD9107FVM-TR
0.8A
3.8V
MSOP8
Reel of 3000
BD9109FVM-TR
0.8A
2.5V
HSON8
Reel of 3000
BD9120HFN-TR
2.0A
3.7V
SON00
8V5060
Reel of 2000
BD9110NV-E2
Adjustable
(1.0V to 2.5V)
Adjustable
(1.0V to 1.8V)
3.30±2%
Adjustable
(1.0V to 1.5V)
Adjustable
(1.0V to 2.5V)
Available
Part Number
Package
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VCC Voltage
PVCC Voltage
EN Voltage
SW , ITH Voltage
Power Dissipation 1
Power Dissipation 2
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
VCC
PVCC
VEN
VSW,VITH
Pd1
Pd2
Topr
Tstg
Tjmax
BD910xFVM
-0.3 to +7 (Note 1)
-0.3 to +7 (Note 1)
-0.3 to +7
-0.3 to +7
0.38 (Note 2)
0.58 (Note 3)
-25 to +85
-55 to +150
+150
Limit
BD9110NV
-0.3 to +7 (Note 1)
-0.3 to +7 (Note 1)
-0.3 to +7
-0.3 to +7
0.64 (Note 4)
5.29 (Note 5)
-25 to +105
-55 to +150
+150
Unit
BD9120HFN
-0.3 to +7 (Note 1)
-0.3 to +7 (Note 1)
-0.3 to +7
-0.3 to +7
0.63 (Note 6)
1.75 (Note 7)
-25 to +85
-55 to +150
+150
V
V
V
V
W
W
°C
°C
°C
(Note 1) Pd should not be exceeded.
(Note 2) IC only
(Note 3) 1-layer. mounted on a 70mm x 70mm x 1.6mm glass-epoxy board
(Note 4) IC only
(Note 5) 4-layer. mounted on a 74.2mm x 74.2mm x 1.6mm glass-epoxy board, area of copper foil in 1st layer : 5505mm2
(Note 6) 1-layer. mounted on a 74.2mm x 74.2mm x 1.6mm glass-epoxy board, area of copper foil : 0.2%
(Note 7) 1-layer. mounted on a 74.2mm x 74.2mm x 1.6mm glass-epoxy board, area of copper foil : 65%
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions (Ta=25°C)
Parameter
Symbol
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
VCC (Note 8)
4.0
5.5
4.0
5.5
4.5
5.5
4.5
5.5
2.7
4.5
V
PVCC Voltage
PVCC (Note 8)
4.0
5.5
4.0
5.5
4.5
5.5
4.5
5.5
2.7
4.5
V
EN Voltage
SW Average
Output Current
VEN
0
VCC
0
VCC
0
VCC
0
VCC
0
VCC
V
-
0.8
-
1.2
-
0.8
-
2.0
-
0.8
A
VCC Voltage
ISW
(Note 8)
(Note 8) Pd should not be exceeded.
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Electrical Characteristics
◎BD9106FVM (Ta=25°C, VCC=5V, VEN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Standby Current
ISTB
0
10
μA
Bias Current
ICC
250
400
μA
EN Low Voltage
VENL
GND
0.8
V
EN High Voltage
VENH
2.0
VCC
V
EN Input Current
IEN
1
10
μA
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
Pch FET ON-Resistance (Note 9)
RONP
0.35
0.60
Ω
Nch FET ON-Resistance (Note 9)
RONN
0.25
0.50
Ω
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output Voltage (Note 9)
VOUT
1.200
V
ITH Sink Current
ITHSI
10
20
μA
ITH Source Current
ITHSO
10
20
μA
UVLO Threshold Voltage
VUVLOTh
3.2
3.4
3.6
V
UVLO Hysteresis Voltage
VUVLOHys
50
100
200
mV
Soft Start Time
tSS
1.5
3
6
ms
Timer Latch Time
tLATCH
0.5
1
2
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
ADJ=H
ADJ=L
VCC=H to L
(Note 9) Design Guarantee（Outgoing inspection is not done on all products）
◎BD9107FVM (Ta=25°C, VCC=5V, VEN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Standby Current
ISTB
0
10
μA
Bias Current
ICC
250
400
μA
EN Low Voltage
VENL
GND
0.8
V
EN High Voltage
VENH
2.0
VCC
V
EN Input Current
IEN
1
10
μA
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
Pch FET ON-Resistance (Note 9)
RONP
0.35
0.60
Ω
Nch FET ON-Resistance (Note 9)
RONN
0.25
0.50
Ω
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output Voltage (Note 9)
VOUT
1.200
V
ITH Sink Current
ITHSI
10
20
μA
ITH Source Current
ITHSO
10
20
μA
UVLO Threshold Voltage
VUVLOTh
2.6
2.7
2.8
V
UVLO Hysteresis Voltage
VUVLOHys
150
300
600
mV
Soft Start Time
tSS
0.5
1
2
ms
Timer Latch Time
tLATCH
0.5
1
2
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
VOUT=H
VOUT=L
VCC=H to L
(Note 9) Design Guarantee（Outgoing inspection is not done on all products）
◎BD9109FVM (Ta=25°C, VCC=PVCC=5V, VEN= VCC unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Standby Current
ISTB
0
10
Bias Current
ICC
250
400
EN Low Voltage
VENL
GND
0.8
EN High Voltage
VENH
2.0
VCC
EN Input Current
IEN
1
10
Oscillation Frequency
fOSC
0.8
1
1.2
Pch FET ON-Resistance (Note 9)
RONP
0.35
0.60
Nch FET ON-Resistance (Note 9)
RONN
0.25
0.50
Output Voltage (Note 9)
VOUT
3.234
3.300
3.366
ITH Sink Current
ITHSI
10
20
ITH Source Current
ITHSO
10
20
UVLO Threshold Voltage
VUVLO1
3.6
3.8
4.0
UVLO Hysteresis Voltage
VUVLO2
3.65
3.9
4.2
Soft Start Time
tSS
0.5
1
2
Timer Latch Time
tLATCH
1
2
3
Output Short Circuit
VSCP
2
2.7
Threshold Voltage
Unit
μA
μA
V
V
μA
MHz
Ω
Ω
V
μA
μA
V
V
ms
ms
V
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
VOUT=H
VOUT=L
VCC=H to L
VCC=L to H
SCP/TSD operated
VOUT=H to L
(Note 9) Design Guarantee（Outgoing inspection is not done on all products）
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TSZ22111･15･001
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Electrical Characteristics – continued
◎BD9110NV (Ta=25°C, VCC=PVCC=5V, VEN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Standby Current
ISTB
0
10
μA
Bias Current
ICC
250
350
μA
EN Low Voltage
VENL
GND
0.8
V
EN High Voltage
VENH
2.0
VCC
V
EN Input Current
IEN
1
10
μA
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
Pch FET ON-Resistance (Note 9)
RONP
200
320
mΩ
Nch FET ON-Resistance (Note 9)
RONN
150
270
mΩ
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output Voltage (Note 9)
VOUT
1.200
V
ITH Sink Current
ITHSI
10
20
μA
ITH Source Current
ITHSO
10
20
μA
UVLO Threshold Voltage
VUVLOTh
3.5
3.7
3.9
V
UVLO Hysteresis Voltage
VUVLOHys
50
100
200
mV
Soft Start Time
tSS
2.5
5
10
ms
Timer Latch Time
tLATCH
0.5
1
2
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
VOUT=H
VOUT=L
VCC=H to L
(Note 9) Design Guarantee（Outgoing inspection is not done on all products）
◎BD9120HFN (Ta=25°C, VCC=PVCC=3.3V, VEN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Standby Current
ISTB
0
10
μA
Bias Current
ICC
200
400
μA
EN Low Voltage
VENL
GND
0.8
V
EN High Voltage
VENH
2.0
VCC
V
EN Input Current
IEN
1
10
μA
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
Pch FET ON-Resistance (Note 9)
RONP
0.35
0.60
Ω
Nch FET ON-Resistance (Note 9)
RONN
0.25
0.50
Ω
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output Voltage(Note 9)
VOUT
1.200
V
ITH Sink Current
ITHSI
10
20
μA
ITH Source Current
ITHSO
10
20
μA
UVLO Threshold Voltage
VUVLO1
2.400
2.500
2.600
V
UVLO Hysteresis Voltage
VUVLO2
2.425
2.550
2.700
V
Soft Start Time
tSS
0.5
1
2
ms
Timer Latch Time
tLATCH
1
2
3
ms
Output Short Circuit
VSCP
VOUTx0.5
VOUTx0.7
V
Threshold Voltage
Conditions
EN=GND
Standby mode
Active mode
VEN=3.3V
PVCC=3.3V
PVCC=3.3V
VOUT=H
VOUT=L
VCC=H to L
VCC=L to H
SCP/TSD operated
VOUT=H to L
(Note 9) Design Guarantee（Outgoing inspection is not done on all products）
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TSZ22111･15･001
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Block Diagram
【BD9106FVM, BD9107FVM】
VCC
VREF
PVCC
VCC
Figure 6. BD9106FVM, BD9107FVM Block Diagram
【BD9109FVM】
VCC
VREF
PVCC
VCC
VOUT
Figure 7. BD9109FVM Block Diagram
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TSZ22111･15･001
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
【BD9110NV】
VCC
PVCC
VCC
Figure 8. BD9110NV Block Diagram
【BD9120HFN】
VCC
VREF
PVCC
VCC
Figure 9. BD9120HFN Block Diagram
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TSZ22111･15･001
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Typical Performance Curves
[VOUT=1.8V]
[VOUT=1.8V]
Ta=25°C
IO=0A
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
【BD9106FVM】
VCC=5V
Ta=25°C
IO=0A
Input Voltage: VCC [V]
EN Voltage: VEN [V]
Figure 10. Output Voltage vs Input Voltage
Figure 11. Output Voltage vs EN Voltage
[VOUT=1.8V]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.8V]
VCC=5V
IO=0A
VCC=5V
Ta=25°C
Temperature: Ta [°C]
Output Current: IOUT [A]
Figure 12. Output Voltage vs Output Current
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Figure 13. Output Voltage vs Temperature
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Typical Performance Curves – continued
[VOUT=1.8V]
Efficiency: η [%]
Frequency: fOSC [MHz]
VCC=5V
VCC=5V
Ta=25°C
Temperature: Ta [°C]
Output Current: IOUT [mA]
Figure 15. Frequency vs Temperature
Figure 14. Efficiency vs Output Current
PMOS
NMOS
EN Voltage: VEN [V]
ON-Resistance: RON [Ω]
VCC=5V
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 16. ON-Resistance vs Temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Figure 17. EN Voltage vs Temperature
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Typical Performance Curves – continued
Frequency: fOSC [MHz]
Circuit Current: ICC [µA]
VCC=5V
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 19. Frequency vs Input Voltage
Figure 18. Circuit Current vs Temperature
Typical Waveforms
[SLLM control
[VOUT=1.8V]
VOUT=1.8V]
VCC=PVCC
=EN
SW
VOUT
] VOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
IO=0A
Figure 20. Soft Start Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Figure 21. SW Waveform
( IO=10mA)
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Typical Waveforms – continued
[PWM control
VOUT=1.8V]
[VOUT=1.8V]
VOUT
SW
VOUT
IOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 22. SW Waveform
(IO=200mA)
Figure 23. Transient Response
(IO=100mA to 600mA, 10μs)
[VOUT=1.8V]
VOUT
VOUT
IOUT
IOUT
VCC=5V
Ta=25°C
Figure 24. Transient response
(Io=600mA to100mA, 10μs)
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TSZ02201-0J3J0AJ00090-1-2
02.Oct.2014 Rev.003
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Typical Performance Curves
【BD9107FVM】
[VOUT=1.5V]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.5V]
Ta=25°C
IO=0A
VCC=5V
Ta=25°C
IO=0A
Input Voltage: VCC [V]
EN Voltage: VEN [V]
Figure 25. Output Voltage vs Input Voltage
Figure 26. Output Voltage vs EN Voltage
VCC=5V
Ta=25°C
[VOUT=1.5V]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.5V]
Output Current: IOUT [A]
Temperature: Ta [°C]
Figure 28. Output Voltage vs Temperature
Figure 27. Output Voltage vs Output Current
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VCC=5V
IO=0A
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BD9120HFN
Datasheet
Typical Performance Curves – continued
VCC=5V
Efficiency: η [%]
Frequency: fOSC [MHz]
[VOUT=1.5V]
VCC=5V
Ta=25°C
Output Current: IOUT [mA]
Temperature: Ta [°C]
Figure 29. Efficiency vs Output Current
Figure 30. Frequency vs Temperature
VCC=5V
NMOS
EN Voltage: VEN [V]
ON-Resistance: RON [Ω]
PMOS
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 32. EN Voltage vs Temperature
Figure 31. ON-Resistance vs Temperature
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BD9110NV
Datasheet
BD9120HFN
Typical Performance Curves – continued
Frequency: fOSC [MHz]
Circuit Current: ICC [µA]
VCC=5V
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 33. Circuit Current vs Temperature
Figure 34. Frequency vs Input Voltage
Typical Waveforms
[VOUT=1.5V]
[SLLM control
VOUT=1.5V]
VCC=PVCC
=EN
SW
VOUT
VOUT
VCC=5V
Ta=25°C
IO=0A
VCC=5V
Ta=25°C
Figure 35. Soft Start Waveform
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Figure 36. SW Waveform
( IO=10mA)
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Datasheet
Typical Waveforms – continued
[PWM control
[VOUT=1.5V]
VOUT=1.5V]
VOUT
SW
VOUT
IOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 37. SW Waveform
(IO=500mA)
Figure 38. Transient Response
(IO=100mA to 600mA, 10μs)
[VOUT=1.5V]
VOUT
IOUT
VCC=5V
Ta=25°C
Figure 39. Transient Response
(IO=600mA to 100mA, 10μs)
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BD9109FVM
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Datasheet
Typical Performance Curves
【BD9109FVM】
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
Ta=25°C
IO=0A
VCC=5V
Ta=25°C
IO=0A
Input Voltage: VCC [V]
EN Voltage: VEN [V]
Figure 40. Output Voltage vs Input Voltage
Figure 41. Output Voltage vs EN Voltage
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
VCC=5V
IO=0A
VCC=5V
Ta=25°C
Temperature: Ta [°C]
Output Current: IOUT [A]
Figure 42. Output Voltage vs Output Current
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Figure 43. Output Voltage vs Temperature
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Datasheet
Typical Performance Curves – continued
Efficiency: η [%]
Frequency: fOSC [MHz]
VCC=5V
VCC=5V
Ta=25°C
Temperature: Ta [°C]
Output Current: IOUT [mA]
Figure 45. Frequency vs Temperature
Figure 44. Efficiency vs Output Current
VCC=5V
PMOS
NMOS
EN Voltage: VEN [V]
ON-Resistance: RON [Ω]
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 46. ON-Resistance vs Temperature
Figure 47. EN Voltage vs Temperature
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BD9110NV
Datasheet
BD9120HFN
Typical Performance Curves – continued
Frequency: fOSC [MHz]
Circuit Current: ICC [µA]
VCC=5V
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 48. Circuit Current vs Temperature
Figure 49. Frequency vs Input Voltage
Typical Waveforms
[SLLM control]
VCC=PVCC
=EN
SW
VOUT
VOUT
VCC=5V
Ta=25°C
Figure 50. Soft Start Waveform
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Figure 51. SW Waveform
( IO=10mA)
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Typical Waveforms – continued
[PWM control]
VOUT
SW
VCC=5V
Ta=25°C
VOUT
IOUT
VCC=5V
Ta=25°C
Figure 53. Transient Response
(IO=100mA to 600mA, 10μs)
Figure 52. SW Waveform
(IO=500mA)
VOUT
IOUT
VCC=5V
Ta=25°C
Figure 54. Transient Response
(IO=600mA to 100mA, 10μs)
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BD9120HFN
Datasheet
Typical Performance Curves
【BD9110NV】
[VOUT=1.4V]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.4V]
Ta=25°C
IO=0A
VCC=5V
Ta=25°C
IO=0A
Input Voltage: VCC [V]
EN Voltage: VEN [V]
Figure 55. Output Voltage vs Input Voltage
Figure 56. Output Voltage vs EN Voltage
[VOUT=1.4V]
[VOUT=1.4V]
VCC=5V
CC=5V
IV
O=0A
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
IO=0A
VCC=5V
Ta=25°C
Output Current: IOUT [A]
Temperature: Ta [°C]
Figure 57. Output Voltage vs Output Current
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Figure 58. Output Voltage vs Temperature
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Typical Performance Curves – continued
[VOUT=1.4V]
VCC=5V
Efficiency: η [%]
Frequency: fOSC [MHz]
VCC=5V
Ta=25°C
Temperature: Ta [°C]
Output Current: IOUT [mA]
Figure 60. Frequency vs Temperature
Figure 59. Efficiency vs Output Current
VCC=5V
PMOS
NMOS
EN Voltage
Voltage:: VEN [V]
EN
ON-Resistance: RON [Ω]
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 61. ON-Resistance vs Temperature
Figure 62. EN Voltage vs Temperature
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BD9120HFN
Typical Performance Curves – continued
VCC=5V
Frequency: fOSC [MHz]
Circuit Current: ICC [µA]
Ta=25°C
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 63. Circuit Current vs Temperature
Figure 64. Frequency vs Input Voltage
Typical Waveforms
[VOUT=1.4V]
[SLLM control
VOUT=1.4V]
VCC=PVCC
=EN
SW
VOUT
VOUT
VCC=5V
Ta=25°C
IO=0A
VCC=5V
Ta=25°C
Figure 65. Soft Start Waveform
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Figure 66. SW Waveform
( IO=10mA)
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Datasheet
Typical Waveforms – continued
[PWM control
VOUT=1.4V]
SW
[VOUT=1.4V]
VOUT
VOUT
VCC=5V
Ta=25°C
IOUT
VCC=5V
Ta=25°C
Figure 67. SW Waveform
( IO=500mA)
Figure 68. Transient Response
(IO=100mA to 600mA, 10μs)
[VOUT=1.4V]
VOUT
IOUT
VCC=5V
Ta=25°C
Figure 69. Transient Response
(IO=600mA to 100mA, 10μs)
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BD9109FVM
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BD9120HFN
Datasheet
Typical Performance Curves
【BD9120HFN】
[VOUT=1.5V]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.5V]
Ta=25°C
IO=0A
VCC
VCC=3.3V
Ta=25°C
IO=0A
Input Voltage: VCC [V]
EN Voltage: VEN [V]
Figure 70. Output Voltage vs Input Voltage
Figure 71. Output Voltage vs EN Voltage
[VOUT=1.5V]
VCC=3.3V
IO=0A
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
[VOUT=1.5V]
VCC=3.3V
Ta=25°C
Output Current: IOUT [A]
Temperature: Ta [°C]
Figure 72. Output Voltage vs Output Current
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Figure 73. Output Voltage vs Temperature
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Datasheet
Typical Performance Curves – continued
[VOUT=1.5V]
Efficiency: η [%]
Frequency: fOSC [MHz]
VCC=3.3V
VCC=3.3V
Ta=25°C
Output Current: IOUT [mA]
Temperature: Ta [°C]
Figure 74. Efficiency vs Output Current
Figure 75. Frequency vs Temperature
VCC=3.3V
PMOS
NMOS
EN Voltage: VEN [V]
ON-Resistance: RON [Ω]
VCC=3.3V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 76. ON-Resistance vs Temperature
Figure 77. EN Voltage vs Temperature
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BD9120HFN
Typical Performance Curves – continued
VCC=3.3V
Circuit Current: ICC [µA]
Frequency: fOSC [MHz]
Ta=25°C
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 78. Circuit Current vs Temperature
Figure 79. Frequency vs Input Voltage
Typical Waveforms
[VOUT=1.5V]
[SLLM control
VOUT=1.5V]
VCC=PVCC
=EN
SW
VOUT
VOUT
=3.3V
VVCC
CC=3.3V
Ta=25°C
Ta=25°C
=0A
IIOO=0A
VCC=3.3V
Ta=25°C
Figure 80. Soft Start Waveform
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Figure 81. SW Waveform
( IO=10mA)
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Typical Waveforms – continued
[PWM control
VOUT=1.5V]
[VOUT=1.5V]
VOUT
SW
IOUT
VOUT
VCC=3.3V
Ta=25°C
Figure 82. SW Waveform
( IO=200mA)
VCC=3.3V
Ta=25°C
Figure 83. Transient Response
(IO=100mA to 600mA, 10μs)
[VOUT=1.5V]
VOUT
IOUT
VCC=3.3V
Ta=25°C
Figure 84. Transient Response
(IO=600mA to 100mA, 10μs)
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BD9110NV
Datasheet
BD9120HFN
Application Information
1. Operation
BD9106FVM, BD9107FVM, BD9109FVM, BD9110NV, and BD9120HFN are synchronous step-down switching regulators
that achieve fast transient response by employing current mode PWM control system. They utilize switching operation
either in PWM (Pulse Width Modulation) mode for heavier load, or SLLMTM (Simple Light Load Mode) operation for
lighter load to improve efficiency.
(1) Synchronous Rectifier
Integrated synchronous rectification using two MOSFETS reduces power dissipation and increases efficiency when
compared to converters using external diodes. Internal shoot-through current limiting circuit further reduces power
dissipation.
(2) Current Mode PWM Control
The PWM control signal of this IC depends on two feedback loops, the voltage feedback and the inductor current
feedback.
(a) PWM (Pulse Width Modulation) Control
The clock signal coming from OSC has a frequency of 1Mhz. When OSC sets the RS latch, the P-Channel
MOSFET is turned on and the N-Channel MOSFET is turned off. The opposite happens when the current
comparator (Current Comp) resets the RS latch i.e. the P-Channel MOSFET is turned off and the N-Channel
MOSFET is turned on. Current Comp’s output is a comparison of two signals, the current feedback control signal
“SENSE” which is a voltage proportional to the current IL, and the voltage feedback control signal, FB.
(b) SLLMTM (Simple Light Load Mode) control
When the control mode is shifted by PWM from heavier load to lighter load or vice versa, the switching pulse is
designed to turn OFF with the device held operating in normal PWM control loop. This allows linear operation
without voltage drop or deterioration in transient response during the sudden load changes. Although the PWM
control loop continues to operate with a SET signal from OSC and a RESET signal from Current Comp, it is so
designed such that the RESET signal is continuously sent even if the load is changed to light mode where the
switching is tuned OFF and the switching pulses disappear. Activating the switching discontinuously reduces the
switching dissipation and improves the efficiency.
SENSE
Current
Comp
VOUT
Level
Shift
FB
RESET
SET
Gm Amp
R Q
IL
S
Driver
Logic
VOUT
SW
Load
OSC
RITH
Figure 85. Diagram of Current Mode PWM Control
PVCC
Current
Comp
SENSE
PVCC
SENSE
Current
Comp
FB
SET
FB
GND
SET
GND
RESET
GND
RESET
GND
SW
GND
SW
IL
GND
IL (AVE)
IL
0A
VOUT
VOUT
VOUT(AVE)
VOUT(AVE)
Not switching
Figure 86. PWM Switching Timing Chart
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Figure 87. SLLM Switching Timing Chart
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2. Description of Functions
(1) Soft-Start Function
During start-up, the soft-start circuit gradually establishes the output voltage to limit the input current. This prevents the
overshoot in the output voltage and inrush current.
(2) Shutdown Function
When the EN terminal is “low”, the device operates in Standby Mode and all functional blocks, including reference
voltage circuit, internal oscillator and drivers, are turned OFF. Circuit current during standby is 0μA (Typ).
(3) UVLO Function
The UVLO circuit detects whether the supplied input voltage is sufficient to obtain the output voltage of this IC. The
UVLO threshold, which has a hysteresis of 50mV to 300mV (Typ), prevents output bouncing.
Hysteresis 50 to 300mV
VCC
EN
VOUT
tSS
tSS
tSS
Soft start
Standby mode
Operating mode
Standby
mode
Standby
mode
Operating mode
UVLO
UVLO
Operating mode
EN
Standby mode
UVLO
Soft Start Time(typ)
Figure 88. Soft Start, Shutdown, UVLO Timing Chart
BD9106FVM
3
tSS
BD9107FVM
1
BD9109FVM
1
BD9110NV
5
BD9120HFN
1
Unit
msec
(4) Short-circuit Protection with Time Delay Function
To protect the IC from breakdown, the short-circuit protection turns the output off when the internal current limiter is
activated continuously for a fixed time (tLATCH) or more. The output that is kept off may be turned on again by restarting
EN or by resetting UVLO.
EN
Output OFF
latch
VOUT
Limit
IL
1msec
Standby
mode
Standby
mode
Operating mode
EN
Timer latch
Operating mode
EN
Timer Latch time (typ)
Figure 89. Short-circuit Protection with Time Delay Diagram
tLATCH
BD9106FVM
1
BD9107FVM
1
BD9109FVM
2
BD9110NV
1
BD9120HFN
2
Unit
msec
Note: In addition to current limit circuit, output short detect circuit is built-in on BD9109FVM and BD9120HFN. If output voltage falls below
2V(typ, BD9109FVM) or VOUTx0.5(typ,BD9120HFN), output voltage will hold turned OFF.
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BD9120HFN
3. Information on Advantages
Advantage 1：Offers fast transient response by using current mode control system
Conventional product (VOUT of which is 3.3 volts)
BD9109FVM (Load response IO=100mA to 600mA)
VOUT
VOUT
228mV
110mV
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by about 50%.
Figure 90. Comparison of Transient Response
Advantage 2：Offers high efficiency for all load ranges.
(1) For lighter load:
This IC utilizes the current mode control called SLLMTM, which reduces various dissipations such as switching
dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and ON-Resistance
dissipation (PRON) that may otherwise cause reduction in efficiency.
Achieves efficiency improvement for lighter load.
(2) For heavier load:
This IC utilizes the synchronous rectifying mode and uses low ON-Resistance MOSFET power transistors.
ON-Resistance of High side MOSFET: 200mΩ to 350mΩ (Typ)
ON-Resistance of Low side MOSFET: 150mΩ to 250mΩ (Typ)
Efficiency: η [%]
100
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load ranges with the improvements mentioned above.
SLLMTM
②
50
①
PWM
①improvement by SLLM system
②improvement by synchronous rectifier
0
0.001
0.01
0.1
Output current :IOUT[A]
1
Figure 91. Efficiency
Advantage 3：・Supplied in smaller package due to small-sized power MOSFETs.
(3 packages are MOSP8, HSON8, SON008V5060)
・Allows reduction in size of application products
・Output capacitor CO required for current mode control: 10 μF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor
(BD9110NV: Co=22µF, L=2.2µH)
Reduces mounting area required.
VCC
15mm
CIN
CIN
DC/DC
Convertor
Controller
RITH
RITH
L
VOUT
L
10mm
CITH
CO
CO
CITH
Figure 92. Example Application
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Datasheet
4. Switching Regulator Efficiency
Efficiency η may be expressed by the equation shown below:
  VOUT  IOUT 100  POUT 100 
VIN  I IN
PIN
POUT
 100
POUT  Pd
%
Efficiency may be improved by reducing the switching regulator power dissipation factors Pdα as follows:
Dissipation factors:
(1) ON-Resistance Dissipation of Inductor and FET：Pd(I2R)
 
Pd I 2 R  IOUT 2  RCOIL  RON 
Where:
RCOIL is the DC resistance of inductor
RON is the ON-Resistance of FET
IOUT is the output current
(2) Gate Charge/Discharge Dissipation：Pd(Gate)
Pd GATE   C gs  f  V 2
Where:
Cgs is the gate capacitance of FET
f is the switching frequency
V is the gate driving voltage of FET
(3) Switching Dissipation：Pd(SW)
Pd SW  
VIN 2  C RSS  I OUT  f
I DRIVE
Where:
CRSS is the reverse transfer capacitance of FET
IDRIVE is the peak current of gate
(4) ESR Dissipation of Capacitor：Pd(ESR)
PdESR  I RMS 2  ESR
Where:
IRMS is the ripple current of capacitor
ESR is the equivalent series resistance
(5) Operating Current Dissipation of IC：Pd(IC)
PdIC   VIN  I CC
Where:
ICC is the circuit current
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BD9120HFN
5. Consideration on Permissible Dissipation and Heat Generation
Since these ICs function with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including
lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat
generation must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON-Resistance of FET are considered. This
is because conduction losses are the most significant among other dissipations mentioned above, such as gate
charge/discharge dissipation and switching dissipation.
① 4layer（74.2mm x 74.2mm x 1.6mmt,
area of cupper foil in Top layer 5505mm2)
θja=23.6°C/W
② 4layer（74.2mm x 74.2mm x 1.6mmt
area of cupper foil in Top layer 6.28mm2)
θja=31.4°C/W
③ 1 layer（74.2mm x 74.2mm x 1.6mmt
area of cupper foil in Top layer 0mm2)
θja=137.4°C/W
④IC onlyθja=195.3°C/W
① 1layer（70mm x 70mm x 1.6mmt
area of cupper foil 65%) θja=71.4°C/W
② 1 layer（70mm x 70mm x 1.6mmt
area of cupper foil 7%) θja=92.4°C/W
③ 1 layer（70mm x 70mm x 1.6mmt
area of cupper foil 0.2%) θja=198.4°C/W
① 1layer（70mm x 70mm x 1.6mmt）
θja=212.8°C/W
②IC only
θja=322.6°C/W
6
2.0
1000
①5.297W
800
600
400
①587.4mW
②387.5mW
200
Power dissipation:Pd [W]
Power dissipation:Pd [W]
Power dissipation:Pd [mW]
①1.75W
1.6
②1.33W
1.2
0.8
③0.63W
0
0
25
50
75 85 100
125
150
2
③0.910W
0.4
0
4 ②3.981W
0
25
50
75 85 100
125
150
0 ④0.640W
0
25
50
75
100105 125
150
Ambient Temperature:Ta [°C]
Ambient Temperature: Ta [°C]
Ambient Temperature: Ta [°C]
Figure 93. Thermal Derating Curve
(MSOP8)
Figure 94. Thermal Derating Curve
(HSON8)
Figure 95. Thermal Derating Curve
(SON008V5060)
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω
IOUT=0.8A, for example,
D=VOUT/VCC=3.3/5=0.66
RON=0.66x0.35+(1-0.66)x0.25
=0.231+0.085
=0.316[Ω]
P  0.82  0.15  0.316 
 298mV 
P  I OUT 2  RCOIL  RON 
RON  D  RONP  1  D   RONN
Where:
D is the ON duty (=VOUT/VCC)
RCOIL is the DC resistance of coil
RONP is the ON-Resistance of P-channel MOS FET
RONN is the ON-Resistance of N-channel MOS FET
IOUT is the Output current
Since RONP is greater than RONN in these ICs, the dissipation increases as the ON duty becomes greater. Taking into
consideration the dissipation shown above, thermal design must be carried out with allowable sufficient margin.
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
6. Selection of Components Externally Connected
(1) Selection of inductor (L)
The inductance significantly depends on output ripple current.
As seen in equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
IL
ΔIL
I L 
VCC
VCC  VOUT   VOUT
L  VCC  f
A
・・・(1)
Appropriate ripple current at output should be +/-30% of the
maximum output current.
IL
VOUT
L
I L  0.3  I OUTMax
A
・・・(2)
VCC  VOUT  VOUT
H 
・・・(3)
CO
L
Figure 96. Output Ripple Current
I L  VCC  f
Where:
ΔIL is the Output ripple current, and
f is the Switching frequency
Note: Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases
efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3x0.8A=0.24A, for example, (BD9109FVM)
L
(5  3.3)  3.3
 4.675  4.7
0.24  5  1M
H 
Note: Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor
for better efficiency.
(2) Selection of Output Capacitor (CO)
Output capacitor should be selected with the consideration of the stability region
and the equivalent series resistance required to minimize ripple voltage.
VCC
Output ripple voltage is determined by the equation (4):
VOUT
L
ESR
CO
Figure 97. Output Capacitor
VOUT  I L  ESR [V ]
・・・(4)
Where:
ΔIL is the Output ripple current, and
ESR is the Equivalent series resistance of output capacitor
Note: Rating of the capacitor should be determined allowing sufficient margin
against output voltage.
Less ESR allows reduction in output ripple voltage.
The output rise time must be designed to fall within the soft-start time, and the capacitance of output capacitor should
be determined with consideration on the requirements of equation (5):
t  I LIMIT  I OUT 
・・・(5)
CO  SS
VOUT
Where:
tSS: Soft-Start time
ILIMIT: Over current detection level, 2A(Typ)
In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and tSS=1ms,
1m  2  0.8 
F 
CO 
 364
3.3
Inappropriate capacitance may cause problem in startup. A 10μF to 100μF ceramic capacitor is recommended.
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
(3) Selection of Input Capacitor (CIN)
VCC
Input capacitor must be a low ESR capacitor with a capacitance sufficient to
cope with high ripple current to prevent high transient voltage. The ripple current
IRMS is given by the equation (6):
CIN
VOUT
L
I RMS  IOUT 
VOUT VCC  VOUT 
VCC
[A]・・・(6)
< Worst case > IRMSMax
Co
I
When VCC is twice the VOUT, I RMS  OUT
2
Figure 98. Input Capacitor
If VCC=5V, VOUT=3.3V, and IOUTMax=0.8A, (BD9109FVM)
I RMS  0.8 
3.3(5  3.3)
 0.38
5
ARMS 
A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
(4) Determination of RITH, CITH for Phase Compensation
As the Current Mode Control is designed to limit the inductor current, a pole (phase lag) appears in the low frequency
area due to a CR filter consisting of an output capacitor and a load resistance, while a zero (phase lead) appears in the
high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero
to the power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min)
fp 
A
fp(Max)
Gain
0
[dB]
fZ(ESR)
IOUTMin
1
2  RO  CO
f Z ESR 
1
2  ESR CO
IOUTMax
Pole at power amplifier
Phase
[deg]
0
When the output current decreases, the load resistance
Ro increases and the pole frequency decreases.
-90
Figure 99. Open Loop Gain Characteristics
A
fZ(Amp)
Gain
[dB]
0
0
Phase
[deg]
fpMin 
1
2  ROMax  CO
[ Hz]  with lighterload
fpMax 
1
2  ROMin  CO
[ Hz]  with heavier load
Zero at power amplifier
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the
capacitor ESR is reduced to half.)
f Z  Amp  
-90
1
2  R ITH  C ITH
Figure 100. Error Amp Phase Compensation Characteristics
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BD9106FVM
VCC
BD9107FVM
CIN
VCC,PVCC
EN
VOUT
BD9109FVM
Datasheet
BD9120HFN
L
SW
VOUT
ITH
BD9110NV
VOUT
ESR
GND,PGND
RO
CO
RITH
CITH
Figure 101. Typical Application
Stable feedback loop may be achieved by canceling the pole fp (Min) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
fz Amp   fpMin


1
2  RITH  CITH

1
2  ROMax  CO
(5) Setting the Output Voltage (except for BD9109FVM)
The output voltage VOUT is determined by the equation (7):
VOUT  R2 / R1  1 VADJ ・・・(7)
L
6
Output
SW
Where:
VADJ is the Voltage at ADJ terminal (0.8V Typ)
CO
R2
1
ADJ
The required output voltage may be determined by adjusting R1 and R2.
R1
Figure 102. Determination of Output Voltage
Adjustable output voltage range : 1.0V to 1.5V/ BD9107FVM, BD9120HFN
1.0V to 2.5V/BD106FVM, BD9110NV
Use 1 kΩ to 100 kΩ resistor for R1. If a resistor with resistance higher than 100 kΩ is used, check the assembled set
carefully for ripple voltage, etc.
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BD9109FVM
BD9110NV
Datasheet
BD9120HFN
7. Cautions on PC Board Layout
BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN
1
VOUT/ADJ
2
ITH
VCC
8
PVCC
7
VCC
RITH
CIN
EN
3
EN
4
GND
SW
6
PGND
5
①
L
VOUT
CITH
CO
GND
②
③
Figure 103. Layout Diagram
BD9110NV
VCC
R2
1
2
R1
3
RITH
③
CITH
EN 8
ADJ
VCC
PVCC
ITH
SW
7
GND
PGND
①
L
6
5
4
EN
VOUT
CIN
②
Co
GND
Figure 104. Layout Diagram
①
For the sections drawn with heavy line, use thick conductor pattern as short as possible.
②
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor CO closer to
the pin PGND.
③
Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
Note: The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package.
The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
8. Recommended Components Lists On Above Application
Table1. [BD9106FVM]
Symbol
Part
Value
CMD6D11B
TDK
VLF5014AT-4R7M1R1
10μF
Kyocera
CM316X5R106K10A
10μF
Kyocera
CM316X5R106K10A
750pF
Murata
GRM18series
4.7μH
CIN
Ceramic capacitor
CO
Ceramic capacitor
CITH
Ceramic capacitor
RITH
Resistance
Table2. [BD9107FVM]
Symbol
Part
Series
Sumida
Coil
L
Manufacturer
VOUT=1.0V
18kΩ
ROHM
MCR10 1802
VOUT=1.2V
22kΩ
ROHM
MCR10 2202
VOUT=1.5V
22kΩ
ROHM
MCR10 2202
VOUT=1.8V
27kΩ
ROHM
MCR10 2702
VOUT=2.5V
36kΩ
ROHM
MCR10 3602
Manufacturer
Series
Sumida
CMD6D11B
Value
Coil
4.7μH
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
1000pF
Murata
GRM18series
L
RITH
Resistance
Table3. [BD9109VM]
Symbol
Part
VOUT=1.0V
4.3kΩ
ROHM
MCR10 4301
VOUT=1.2V
6.8kΩ
ROHM
MCR10 6801
VOUT=1.5V
9.1kΩ
ROHM
MCR10 9101
VOUT=1.8V
12kΩ
ROHM
MCR10 1202
Value
Manufacturer
Series
Sumida
CMD6D11B
Coil
4.7μH
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
330pF
Murata
GRM18series
RITH
Resistance
30kΩ
ROHM
MCR10 3002
Value
Manufacturer
Series
L
Table4. [BD9110NV]
Symbol
Part
Coil
2.2μH
TDK
LTF5022T-2R2N3R2
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
22μF
Kyocera
CM316B226K06A
CITH
Ceramic capacitor
1000pF
Murata
GRM18series
ROHM
MCR10 1202
L
VOUT=1.0V
VOUT=1.2V
RITH
Resistance
VOUT=1.5V
12kΩ
VOUT=1.8V
VOUT=2.5V
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BD9106FVM
BD9107FVM
Table5. [BD9120HFN]
Symbol
Part
BD9109FVM
BD9110NV
Value
Datasheet
BD9120HFN
Manufacturer
Series
Sumida
CMD6D11B
L
Coil
4.7μH
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
680pF
Murata
GRM18series
RITH
Resistance
VOUT=1.0V
8.2kΩ
ROHM
MCR10 8201
VOUT=1.2V
8.2kΩ
ROHM
MCR10 8201
VOUT=1.5V
4.7kΩ
ROHM
MCR10 4701
Note:The parts list presented above is an example of recommended parts. Although the parts are the same, actual circuit characteristics should be checked on
your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing
the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode
established between the SW and PGND pins.
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BD9107FVM
BD9109FVM
BD9110NV
Datasheet
BD9120HFN
I/O Equivalent Circuit
【BD9106FVM, BD9107FVM, BD9109FVM】
・EN pin
PVCC
・SW pin
VCC
10kΩ
PVCC
PVCC
SW
EN
・VOUT pin (BD9109FVM)
・ADJ pin (BD9106FVM, BD9107FVM)
VCC
VCC
10kΩ
10kΩ
VOUT
ADJ
・ITH pin
VCC
VCC
ITH
【BD9110NV, BD9120HFN】
・EN pin
EN
・SW pin
PVCC
PVCC
PVCC
10kΩ
SW
・ITH pin (BD9120HFN)
・ITH pin (BD9110NV)
VCC
VCC
ITH
ITH
・ADJ pin
10kΩ
ADJ
Figure 105. I/O Equivalent Circuit
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size
and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
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BD9109FVM
BD9110NV
Datasheet
BD9120HFN
Operational Notes – continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 106. Example of monolithic IC structure
13. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Ordering Information
B
D
9
1
x
x
Part Number
x
x
x
Package
xx
-
Packaging and forming specification
E2: Embossed tape and reel
(SON008V5060,)
TR: Embossed tape and reel
(MSOP8, HSON8)
NV : SON008V5060
HFN:MSOP8
FVM:HSON8
Marking Diagrams
BD9106FVM
MSOP8(TOP VIEW)
D
9
0
1
6
BD9107FVM
MSOP8(TOP VIEW)
Part Number Marking
D
LOT Number
0
9
1
7
1PIN MARK
9
0
1
9
LOT Number
1PIN MARK
BD9109FVM
MSOP8(TOP VIEW)
D
Part Number Marking
BD9110NV
SON008V5060 (TOP VIEW)
Part Number Marking
Part Number Marking
B D 9 11 0
LOT Number
LOT Number
1PIN MARK
1PIN MARK
BD9120HFN
HSON8 (TOP VIEW)
Part Number Marking
D 9 1
LOT Number
2 0
1PIN MARK
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BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Physical Dimension Tape and Reel information
Package Name
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Physical Dimension Tape and Reel information - continued
Package Name
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Physical Dimension Tape and Reel information - continued
Package Name
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© 2012 ROHM Co., Ltd. All rights reserved.
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BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Revision History
Date
Revision
17.Jan.2012
20.Sep.2013
02.Oct.2014
001
002
003
Changes
New Release
Revise the items about Power dissipation
Applied the ROHM Standard Style and improved understandability.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
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02.Oct.2014 Rev.003
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BD9106FVM - Web Page
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